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# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 44

Publication Year: 2012, Page(s):C1 - 266
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• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2012, Page(s): C2
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• ### New Information for T-ED Authors

Publication Year: 2012, Page(s):267 - 268
Cited by:  Papers (2)
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• ### EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

Publication Year: 2012, Page(s):269 - 276
Cited by:  Papers (28)
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This paper reports on the control of the direct-contact La-silicate/Si interface structure with the aim of achieving scaled equivalent oxide thickness (EOT) and small interface state density. The interface state density at the direct-contact La-silicate/Si interface is found to be reduced to 1.6 × 1011 cm-2eV-1 by annealing at 800 °C for 30 min in for... View full abstract»

• ### The Impact of Fringing Field on the Device Performance of a p-Channel Tunnel Field-Effect Transistor With a High-$kappa$ Gate Dielectric

Publication Year: 2012, Page(s):277 - 282
Cited by:  Papers (20)
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Detailed investigation, with the help of extensive device simulations, of the effects of varying the dielectric constant κ of the gate dielectric on the device performance of a p-channel tunnel field-effect transistor (p-TFET) is reported for the first time in this paper. It is observed that the fringing field arising out of a high-κ gate dielectric degrades the device performance of... View full abstract»

• ### Reset Current Scaling in Phase-Change Memory Cells: Modeling and Experiments

Publication Year: 2012, Page(s):283 - 291
Cited by:  Papers (4)
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The operation of a phase-change memory cell is studied, with special regard to programming performance, by means of analytical and TCAD numerical modeling and experimental characterization. Dependence of the reset current on geometrical properties of the heater element is analyzed through the study of heat flux from the heater element to the phase-change material. A simple electrothermal analytica... View full abstract»

• ### Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

Publication Year: 2012, Page(s):292 - 301
Cited by:  Papers (115)
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Germanium is a widely used material for tunnel FETs because of its small band gap and compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is considered. However, direct band-to-band tunneling (BTBT) in Ge should be included in tunnel FET modeling and simulations since the energy difference between the Ge conduction band edges at the L and Γ valleys is o... View full abstract»

• ### A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling

Publication Year: 2012, Page(s):302 - 308
Cited by:  Papers (12)
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A new approach to implementing correlated high-frequency noise in bipolar junction transistor (BJT) large-signal compact models is developed by placing an RC -delayed noise current between the base and collector nodes. The approach reproduces the two stages of noise transport in a BJT, i.e., noise generation in the base and emitter and transportation through the collector-base junction spac... View full abstract»

• ### Impact of Nonuniform Doping on Random Telegraph Noise in Flash Memory Devices

Publication Year: 2012, Page(s):309 - 315
Cited by:  Papers (14)
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This paper presents a thorough numerical investigation of the effect of nonuniform doping on random telegraph noise (RTN) in nanoscale Flash memory devices. For a fixed average threshold voltage, the statistical distribution of the RTN fluctuation amplitude is studied with nonconstant doping concentrations in the length, width, or depth direction in the channel, showing that doping increase at the... View full abstract»

• ### Experimental Investigation of Hole Transport in Strained $hbox{Si}_{1 - x}hbox{Ge}_{x}/hbox{SOI}$ pMOSFETs—Part I: Scattering Mechanisms in Long-Channel Devices

Publication Year: 2012, Page(s):316 - 325
Cited by:  Papers (16)
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This paper presents a wide experimental study of hole transport in SiGe pMOSFETs. Various Ge contents, from 20% up to 60%, and growth templates [unstrained or tensely strained silicon-on-insulator (SOI)] were screened in order to study the influence of various strain levels and Ge concentrations. Electrical results have been compared with the amount of strain in the channel, characterized through ... View full abstract»

• ### Design Requirements for Steeply Switching Logic Devices

Publication Year: 2012, Page(s):326 - 334
Cited by:  Papers (8)
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Many steeply switching logic devices have recently been proposed to overcome the energy efficiency limitations of CMOS technology. In this paper, circuit-level energy-performance analysis is used to derive the design requirements for these alternative switching devices. Using a simple analytical approach, this paper shows that the optimal Ion/Ioff and E View full abstract»

• ### High-Mobility Ge pMOSFET With 1-nm EOT $hbox{Al}_{2} hbox{O}_{3}/hbox{GeO}_{x}/hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

Publication Year: 2012, Page(s):335 - 341
Cited by:  Papers (91)
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An ultrathin equivalent oxide thickness (EOT) Al2O3/ GeOx/Ge gate stack with a superior GeOx/Ge metal-oxide-semiconductor (MOS) interface and p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) using this gate stack have been fabricated by a plasma post oxidation method. The properties of the GeOx/ Ge MOS interfaces are sys... View full abstract»

• ### Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces

Publication Year: 2012, Page(s):342 - 348
Cited by:  Papers (14)
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This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide (HfO2) and aluminum oxide (Al2O3) layers grown by chemical-vapor-based atomic layer deposition method. Using a rigorous metal-oxide-semiconductor model and results from capacitance-voltage measurements, the density of fixed charges (Nf) and the d... View full abstract»

• ### $hbox{MOS}^{3}$: A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs

Publication Year: 2012, Page(s):349 - 358
Cited by:  Papers (12)
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In this paper, we present a new compact drain-current model for double-gate or triple-gate silicon on insulator (SOI) metal-oxide-semiconductor field-effect transistors, which is based on a physics-based 3-D analysis. Explicit analytical model equations for the height of the potential barrier are derived in closed form from a 3-D model for the channel electrostatics without the need to introduce a... View full abstract»

• ### Submicron Ambipolar Nanocrystalline Silicon Thin-Film Transistors and Inverters

Publication Year: 2012, Page(s):359 - 366
Cited by:  Papers (9)
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Nanocrystalline silicon (nc-Si) thin-film transistors (TFTs) fabricated at a maximum processing temperature of 250 °C operate with high field-effect mobility compared with amorphous-silicon TFTs. By reducing the oxygen content in the channel layer, ambipolar behavior can be obtained. Two levels of electron-beam lithography are employed to fabricate nc-Si TFTs with nanoscale dimensions that ... View full abstract»

• ### Carrier Lifetime Engineering for Floating-Body Cell Memory

Publication Year: 2012, Page(s):367 - 373
Cited by:  Papers (7)
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A novel bias scheme is demonstrated for performance improvement of floating-body cell memory, particularly retention time. Its basic mechanism is based on carrier lifetime engineering, which takes advantage of generation lifetime that is longer than recombination lifetime. In addition, the proposed scheme is suitable for low-power operation; a high drain bias is unnecessary to generate excess carr... View full abstract»

• ### Impact of $hbox{N}_{2}$ Plasma Power Discharge on AlGaN/GaN HEMT Performance

Publication Year: 2012, Page(s):374 - 379
Cited by:  Papers (13)
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The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancemen... View full abstract»

• ### Low-Voltage Oxide-Based TFTs Self-Assembled on Paper Substrates With Tunable Threshold Voltage

Publication Year: 2012, Page(s):380 - 384
Cited by:  Papers (2)
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Oxide-based thin-film transistors (TFTs) with a lateral in-plane electrode are self-assembled on paper substrates, and the electrical modulation effect of the in-plane electrode is investigated. A SiO2-based solid-electrolyte film with high specific capacitance is used as the gate dielectric, and the operation voltage is reduced to less than 2.0 V. The threshold voltage (Vth... View full abstract»

• ### 1.5-V-Operation Ultralow Power Circuit of Poly-Si TFTs Fabricated Using the NAOS Method

Publication Year: 2012, Page(s):385 - 392
Cited by:  Papers (8)
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We have fabricated thin-film transistors (TFTs) and liquid-crystal displays (LCDs) with monolithic drivers on glass substrates and achieved ultralow power consumption by operating with a low power-supply voltage at 3 V. The gate insulator of the TFTs has a stack structure with an ultrathin interfacial SiO2 layer formed by nitric acid oxidation of silicon and a 40-nm-thick SiO2 View full abstract»

• ### Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability

Publication Year: 2012, Page(s):393 - 399
Cited by:  Papers (19)  |  Patents (2)
| | PDF (455 KB) | HTML

Because of the rapid diffusion of hydrogen in zinc oxide even at a relatively low temperature, zinc-oxide-based thin-film transistors (TFTs) with hydrogen-doped source/drain regions suffer from degraded thermal stability. The use of boron, which is a heavier and a more slowly diffusing dopant, is systematically investigated as a replacement of hydrogen. Its effectiveness as a dopant has been studi... View full abstract»

• ### Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

Publication Year: 2012, Page(s):400 - 407
Cited by:  Papers (51)
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This study analyzes the current spreading effect and light extraction efficiency (LEE) of lateral and vertical light-emitting diodes (LEDs). Specifically, this study uses a fully 2-D model that solves drift-diffusion and Poisson equations to investigate current flow paths and radiative recombination regions. The ray-tracing technique was used to calculate the LEE of the top surface. First, this st... View full abstract»

• ### UIS Analysis and Characterization of the SONOS Gate Power MOSFET

Publication Year: 2012, Page(s):408 - 413
Cited by:  Papers (3)
| | PDF (421 KB) | HTML

In this paper, unclamped inductive switching (UIS) performance of the novel silicon-oxide-nitride-oxide-silicon (SONOS) gate power MOSFET (SG-MOSFET) is analyzed. The avalanche energy absorption of the SG-MOSFET at UIS is 5.2 times that of the conventional power MOSFET. Analysis shows that the improvement is due to the heavily doped p-body used in the device. Moreover, the influence of the structu... View full abstract»

• ### Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

Publication Year: 2012, Page(s):414 - 418
Cited by:  Papers (29)
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An edge termination method, referred to as space-modulated junction termination extension (SMJTE) combined with a mesa structure, is presented for ultrahigh-voltage p-i-n diodes in 4H-SiC. Numerical device simulations have been performed for over 15-kV-class 4H-SiC p-i-n diodes with the proposed edge termination. The structure exhibits a high breakdown capability with an improved tolerance for the... View full abstract»

• ### The Best Control of Parasitic BJT Effect in SOI-LDMOS With SiGe Window Under Channel

Publication Year: 2012, Page(s):419 - 425
Cited by:  Papers (21)
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The floating-body effect and impact ionization generate excess holes that are amplified by the parasitic bipolar junction transistor (BJT) in silicon-on-insulator lateral double-diffused MOSFETs (SOI-LDMOS) that degrade the transistor performance. In this paper, a novel silicon germanium (SiGe) window LDMOS on SOI (SW-SOI) is reported where the buried oxide under the channel region becomes thinner... View full abstract»

• ### An Area-Correction Model for Accurate Extraction of Low Specific Contact Resistance

Publication Year: 2012, Page(s):426 - 432
Cited by:  Papers (2)
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The parasitic factors that strongly influence the measurement accuracy of cross-bridge Kelvin resistors have been extensively discussed during the last few decades. The minimum value of specific contact resistance that can be accurately extracted has been estimated. In this paper, we present an analytical model to account for the actual current flow across the contact and propose an area-correctio... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy