# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 49

Publication Year: 2011, Page(s):C1 - 4118
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• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2011, Page(s): C2
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• ### Confidentiality of the review process

Publication Year: 2011, Page(s): 4119
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• ### Kudos to our reviewers

Publication Year: 2011, Page(s): 4120
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• ### 2011 Golden List

Publication Year: 2011, Page(s):4121 - 4144
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• ### Shear Piezoresistance in MOSFET Devices Under General Operating Conditions

Publication Year: 2011, Page(s):4145 - 4154
Cited by:  Papers (2)
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This paper describes the modeling and characterization of in-plane stress sensors based on the shear piezoresistance effect in field-effect-transistor (FET) inversion layers. FET test structures fabricated in a commercial 0.6-μm complementary MOS technology were subjected to in-plane shear and normal stresses. A complete set of inversion layer piezoresistive coefficients was extracted for g... View full abstract»

• ### Comparative Simulation Study of the Different Sources of Statistical Variability in Contemporary Floating-Gate Nonvolatile Memory

Publication Year: 2011, Page(s):4155 - 4163
Cited by:  Papers (18)
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For the first time, a comprehensive comparative study of the impact of different sources of statistical variability in nonvolatile memory (NVM) has been carried out using the 3-D numerical simulation of large statistical ensembles and approaches based on the impedance-field method. Results of the threshold voltage variability in a template 32-nm floating-gate NVM subject to random discrete dopants... View full abstract»

• ### Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors

Publication Year: 2011, Page(s):4164 - 4171
Cited by:  Papers (34)
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The small-signal parameters of gate-all-around tunneling field-effect transistors (GAA TFETs) with different gate lengths were extracted and analyzed in terms of their gate capacitance, source-drain conductance, transconductance, distributed channel resistance, and inversion layer length. Because of the unique current drive and inversion layer formation mechanisms of a TFET compared to a conventio... View full abstract»

• ### On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility

Publication Year: 2011, Page(s):4172 - 4179
Cited by:  Papers (21)
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This paper presents a study of the effect of the gate-voltage-dependent mobility on the threshold voltage extraction in long-channel MOSFETs by the transconductance change method and recently proposed transconductance-to-current ratio change method, using analytical modeling and experimental data obtained on advanced silicon-on-insulator (SOI) FinFETs and ultrathin-body SOI MOSFETs with ultrathin ... View full abstract»

• ### On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain Voltage

Publication Year: 2011, Page(s):4180 - 4188
Cited by:  Papers (19)
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In this paper, we study the effect of the drain voltage on the threshold voltage extraction in long-channel MOSFETs by the transconductance change and transconductance-to-current ratio change methods, using analytical modeling and experimental data obtained on advanced UTB SOI MOSFETs. It is shown that, although these two methods have the same physical background, they feature radically different ... View full abstract»

• ### Investigation of Tunneling Current in $\hbox{SiO}_{2}/ \hbox{HfO}_{2}$ Gate Stacks for Flash Memory Applications

Publication Year: 2011, Page(s):4189 - 4195
Cited by:  Papers (2)
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Despite theoretical predictions of significant performance improvement in Flash memory devices using tunnel-barrier-engineered (TBE) structures, there have been very few reports that demonstrate experimental verification. In this work, we have studied the role of factors such as high-k layer thickness and annealing recipe on the performance of SiO2/HfO2 gate stacks by electri... View full abstract»

• ### Low Frequency Noise in Strained Si Heterojunction Bipolar Transistors

Publication Year: 2011, Page(s):4196 - 4203
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The low frequency noise performance of strained Si heterojunction bipolar transistors (sSi HBTs) is presented for the first time. Conventional SiGe HBTs and Si bipolar junction transistors (BJTs), processed with strained Si devices, were also measured as a reference. It is found that a lower noise level is obtained in sSi HBTs for a given collector current, which is important for circuit applicati... View full abstract»

• ### Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass Materials

Publication Year: 2011, Page(s):4204 - 4211
Cited by:  Papers (21)
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We present a compact model to calculate the capacitance of undoped high-mobility low-density-of-states materials in double-gate device architecture. Analytical equations for estimating the subband energies, while taking the effect of wavefunction penetration into the gate oxide and the effective mass discontinuity, are presented for the first time in a compact modeling framework. The surface poten... View full abstract»

• ### High-Density Three-Dimensional Stacked nand Flash With Common Gate Structure and Shield Layer

Publication Year: 2011, Page(s):4212 - 4218
Cited by:  Papers (3)  |  Patents (1)
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A new 3-D stacked NAND Flash memory is proposed to achieve high density by using common gate structure and shield layer. By adopting trench structure instead of through-hole structure, threshold voltage (Vth) variation in cells of a cell string can be reduced, and the number of stacked control-gate (CG) electrodes in a gate stack can be increased as a result. In the trench between adjac... View full abstract»

• ### A Full-Range Drain Current Model for Double-Gate Junctionless Transistors

Publication Year: 2011, Page(s):4219 - 4225
Cited by:  Papers (75)
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A drain current model available for full-range operation is derived for long-channel double-gate junctionless transistors. Including dopant and mobile carrier charges, a continuous 1-D charge model is derived by extending the concept of parabolic potential approximation for the subthreshold and the linear regions. Based on the continuous charge model, the Pao-Sah integral is analytically carried o... View full abstract»

• ### Double-Halo Field-Effect Transistor—A Multifunction Device to Sustain the Speed and Density Rate of Modern Integrated Circuits

Publication Year: 2011, Page(s):4226 - 4234
Cited by:  Papers (3)
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In this paper, an extensive description of the main characteristics and possible applications of a double-halo metal-oxide-semiconductor (MOS) device is presented. In particular, the details concerning the prototype fabrication through a standard complementary MOS (CMOS) process and the obtained experimental results are reported. Extensive numerical device simulation has been carried out in order ... View full abstract»

• ### Fluorinated $\hbox{SrTiO}_{3}$ as Charge-Trapping Layer for Nonvolatile Memory Applications

Publication Year: 2011, Page(s):4235 - 4240
Cited by:  Papers (9)
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Charge-trapping properties of SrTiO3 with and without fluorine incorporation are investigated by using an Al/Al2O3/SrTiO3/SiO2/Si structure. The memory device with a fluorinated SrTiO3 film shows promising performance in terms of large memory window (8.8 V) by ±8-V sweeping voltage, large flatband-voltage (VFB) shi... View full abstract»

• ### Asymmetrically Doped FinFETs for Low-Power Robust SRAMs

Publication Year: 2011, Page(s):4241 - 4249
Cited by:  Papers (43)  |  Patents (1)
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We propose FinFETs with unequal source and drain doping concentrations [asymmetrically doped (AD) FinFETs] for low-power robust SRAMs. The effect of asymmetric source/drain doping on the device characteristics is extensively analyzed, and the key differences between conventional and AD FinFETs are clearly shown. We show that asymmetry in the device structure leads to unequal currents for positive ... View full abstract»

• ### Drain-Dependence of Tunnel Field-Effect Transistor Characteristics: The Role of the Channel

Publication Year: 2011, Page(s):4250 - 4257
Cited by:  Papers (43)
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Because of its different current injection mechanism, a tunnel field-effect transistor (TFET) can achieve a sub-60-m/decade subthreshold swing at room temperature, which makes it very attractive in replacing a metal-oxide semiconductor field-effect transistor, particularly for low-power applications. It is well known that some specific TFET structures show a good drain current ID satura... View full abstract»

• ### Ultrawide Frequency Range Crosstalk Into Standard and Trap-Rich High Resistivity Silicon Substrates

Publication Year: 2011, Page(s):4258 - 4264
Cited by:  Papers (21)
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Substrate crosstalk into standard and trap-rich high resistivity silicon (HR-Si) substrates over a wide frequency range, from ultralow frequency (ULF) to extremely high-frequency band (EHF), is investigated using finite-element numerical simulations and experiments. It is demonstrated that low-frequency substrate crosstalk is strongly impacted by the presence of free carriers at the interface betw... View full abstract»

• ### $V_{T} - V_{\rm SUB}$ Characterization of AlGaN/GaN HFET With p-Type Body Layer

Publication Year: 2011, Page(s):4265 - 4271
Cited by:  Papers (1)
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We fabricated AlGaN/GaN heterostructure field effect transistors (HFETs) with p-GaN substrate layers and p-type ohmic contacts (p-sub HFETs) and measured the substrate-bias (VSUB) -dependent threshold voltage VT variation. From this VT-VSUB characteristic, the acceptor concentration in the buffer layer was determined. This method for doping profile measu... View full abstract»

• ### A Theoretical Calculation of the Impact of GaN Cap and $\hbox{Al}_{x}\hbox{Ga}_{1-x}\hbox{N}$ Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a $\hbox{GaN}/\hbox{Al}_{x}\hbox{Ga}_{1-x}\hbox{N/GaN}$ Heterostructure

Publication Year: 2011, Page(s):4272 - 4275
Cited by:  Papers (4)
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The electron mobility in a 2-D electron gas in a GaN/AlxGa1-xN/GaN heterostructure limited by GaN cap-thickness-fluctuation (CTF) and AlxGa1-xN barrier thickness-fluctuation (BTF) scattering is calculated considering the strong spontaneous and piezoelectric polarization. The calculated results reveal that the electron mobility limited by CTF and BTF scat... View full abstract»

• ### Comprehensive Temperature-Dependent Studies of Metamorphic High Electron Mobility Transistors With Double and Single $\delta$-Doped Structures

Publication Year: 2011, Page(s):4276 - 4282
Cited by:  Papers (4)
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The temperature-dependent characteristics of meta morphic high electron mobility transistors (MHEMTs) with double and single δ-doped structure are studied and demonstrated. Due to the use of double δ-doped sheets, the current density in the channel layer and two-dimensional electron gas could effectively be increased. The excellent turn-on voltage of 1.18 (0.80) V, max imum drain sat... View full abstract»

• ### Conduction Mechanisms and Low-Temperature Anomalies in the Electrical Characteristics of Ga– $\hbox{pWSe}_{2}$—A Liquid Metal Schottky Structure

Publication Year: 2011, Page(s):4283 - 4289
Cited by:  Papers (9)
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Ga-pWSe2 Schottky diodes were fabricated on both uncleaved and cleaved WSe2 surfaces and were subjected to forward current-voltage-temperature measurements. The conduction mechanisms have been studied over a temperature range of 140 K-300 K. From and above 200 K onwards, the current-voltage characteristics of both diodes obey thermionic emission (TE) theory with Gaussian barr... View full abstract»

• ### AlyGa1-yN/AlxGa1-xN/GaN Double-heterostructure Detector With Three Ultraviolet Spectral Band Responses

Publication Year: 2011, Page(s):4290 - 4296
Cited by:  Papers (2)
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An AlyGa1-yN/AlxGa1-xN/GaN (y >; x) double-heterostructure (DH) p-p-i-n ultraviolet (UV) detector is designed based on the influence of the polarization effect on the AlGaN/GaN heterostructure. The influences of doping concentration and Al composition in AlGaN on the photoelectric response of the UV detector are calculated and discussed by selfconsist... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy