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IEEE Transactions on Semiconductor Manufacturing

Issue 4 • Nov. 2011

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  • Table of contents

    Publication Year: 2011, Page(s): C1
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  • IEEE Transactions on Semiconductor Manufacturing publication information

    Publication Year: 2011, Page(s): C2
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  • Editorial from the Outgoing Editor-in-Chief

    Publication Year: 2011, Page(s): 477
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  • Editorial

    Publication Year: 2011, Page(s):478 - 479
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  • Max Separation Clustering for Feature Extraction From Optical Emission Spectroscopy Data

    Publication Year: 2011, Page(s):480 - 488
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1020 KB) | HTML iconHTML

    This paper proposes max separation clustering (MSC), a new non-hierarchical clustering method used for feature extraction from optical emission spectroscopy (OES) data for plasma etch process control applications. OES data is high dimensional and inherently highly redundant with the result that it is difficult if not impossible to recognize useful features and key variables by direct visualization... View full abstract»

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  • Metrology Sampling Strategies for Process Monitoring Applications

    Publication Year: 2011, Page(s):489 - 498
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (777 KB) | HTML iconHTML

    Shrinking process windows in very large scale integration semiconductor manufacturing have already necessitated the development of control systems capable of addressing sub-lot-level variation. Within-wafer control is the next milestone in the evolution of advanced process control from lot-based and wafer-based control. In order to adequately comprehend and control within-wafer spatial variation, ... View full abstract»

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  • Enabling Scatterometry as an In-Line Measurement Technique for 32 nm BEOL Application

    Publication Year: 2011, Page(s):499 - 512
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1569 KB) | HTML iconHTML

    Conventional metrology tools are unable to precisely monitor some interconnect attributes such as trench sidewall angle either due to limited capability or excessive cycle time. But these attributes have great impact on interconnect performance for 32 nm technology node and beyond. Scatterometry, a non-destructive metrology technique, is proposed to address the shortcomings of current metrology to... View full abstract»

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  • Study of Bubble Activity in a Megasonic Field Using an Electrochemical Technique

    Publication Year: 2011, Page(s):513 - 518
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (481 KB) | HTML iconHTML

    In the megasonic cleaning of wafers, size and motion of cavitating bubbles and fluid flow due to acoustic streaming play a very important role. In this paper, chronoamperometric technique has been used to seek information on acoustic streaming and bubble activity in a 1 MHz sound field. Specifically, current transients during reduction of potassium ferricyanide were recorded. Data collected at 1-6... View full abstract»

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  • Spectral Evidence of Si Complexes in HVPE-Grown GaAs

    Publication Year: 2011, Page(s):519 - 522
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (296 KB) | HTML iconHTML

    Evidence of Si complexes was discovered in low temperature photoluminescence (PL) spectra recorded from GaAs grown by hydride vapor phase epitaxy and were measured as a function of secondary HCl flow. In addition, time resolved PL of the samples measured long radiative lifetimes, substantiating the excellent quality of the crystalline growth. View full abstract»

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  • Nonlinear Sequential Bayesian Analysis-Based Decision Making for End-Point Detection of Chemical Mechanical Planarization (CMP) Processes

    Publication Year: 2011, Page(s):523 - 532
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (678 KB) | HTML iconHTML

    Chemical mechanical planarization (CMP) process has been widely used in the semiconductor manufacturing industry for realizing highly polished (surface roughness Ra ~1 nm ) and planar [WIWNU ~ 1%, thickness variation standard deviation ~3 nm] surfaces of an in-process wafer. In CMP, accurate and timely decisions for end-point detection (EPD) are extremely important to enable the process to effecti... View full abstract»

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  • Voltage and Temperature-Aware SSTA Using Neural Network Delay Model

    Publication Year: 2011, Page(s):533 - 544
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (617 KB) | HTML iconHTML

    With the emergence of voltage scaling as one of the most powerful power reduction techniques, it has been important to support voltage scalable statistical static timing analysis (SSTA) in deep submicrometer process nodes. In this paper, we propose a single delay model of logic gate using neural network which comprehensively captures process, voltage, and temperature variation along with input sle... View full abstract»

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  • Uniform, Low-Resistive Ni-Pt Silicide Fabricated by Partial Conversion With Low Metal-Consumption Ratio

    Publication Year: 2011, Page(s):545 - 551
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (644 KB) | HTML iconHTML

    We applied partial conversion (PC) with a low metal-consumption ratio (MCR) as the initial silicidation, fabricating uniform and low-resistive Ni-Pt silicide regardless of the device patterns across a wafer. The key to PC in Ni-Pt silicidation was leaving the Ni-Pt alloy on the silicide after the initial silicidation. This process enriched the Pt of the Ni-Pt silicide because the Pt was supplied f... View full abstract»

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  • Wafer Surface Charging Model for Single-Wafer Wet-Spin Processes

    Publication Year: 2011, Page(s):552 - 558
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (459 KB) | HTML iconHTML

    Wet chemical processes in integrated circuit (IC) manufacturing are used in many applications, e.g., post-etch residue removal and pre-deposition surface treatment. While advanced single-wafer wet spin tools are part of the critical tool-set for advanced IC fabrication, non-optimized tool hardware and/or process may induce different types of wafer surface charging issues. In this paper, a physical... View full abstract»

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  • Physical Model for the Small-Scale Residual Topography in Chemical Mechanical Polishing

    Publication Year: 2011, Page(s):559 - 565
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (374 KB) | HTML iconHTML

    In previous work, the small-scale topography evolution of the wafer surface was investigated for a typical interlevel dielectric chemical mechanical planarization process by means of a Fourier analysis of surface profiler scans. It was found that the amplitudes of the individual frequency components decay exponentially at a rate that depends on the respective spatial frequency. In this paper, a ph... View full abstract»

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  • 2011 IEEE International Electron Devices Meeting (IEDM)

    Publication Year: 2011, Page(s): 566
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  • 2012 IEEE International Reliabilty Physics Symposium (IRPS)

    Publication Year: 2011, Page(s): 567
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  • Thirteenth IEEE International Vacuum Electronics Conference and Ninth IEEE International Vacuum Electron Sources Conference (IVEC-IVESC 2012)

    Publication Year: 2011, Page(s): 568
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  • IEEE EnergyTech 2012

    Publication Year: 2011, Page(s): 569
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  • 2011 Index IEEE Transactions on Semiconductor Manufacturing Vol. 24

    Publication Year: 2011, Page(s):570 - 584
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  • IEEE Transactions on Semiconductor Manufacturing information for authors

    Publication Year: 2011, Page(s): C3
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  • Blank page [back cover]

    Publication Year: 2011, Page(s): C4
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Aims & Scope

The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components.

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Meet Our Editors

Editor-in-Chief

Anthony Muscat
Department of Chemical and Environmental Engineering
Harshbarger Bldg., Room 134
1133 E. James Rogers Way
University of Arizona
Tucson, AZ  85721
 
 
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