IEEE Transactions on Nanotechnology

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Publication Year: 2011, Page(s): C1
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• IEEE Transactions on Nanotechnology publication information

Publication Year: 2011, Page(s): C2
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Publication Year: 2011, Page(s):921 - 922
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• A Picowatt Powered Carbon-Nanotube-Based Thermal Convective Motion Sensor

Publication Year: 2011, Page(s):923 - 925
Cited by:  Papers (4)
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We report a thermal convective motion sensor with carbon nanotubes (CNTs) as sensing elements. This sensor uses CNT bundles manipulated by dielectrophresis as both, a heater and thermal detector. This sensor can respond to sinusoidal vibrations, and requires only several picowatts to operate. We have thus far demonstrated that this CNT-based motion sensor can detect linear acceleration as low as 0... View full abstract»

• Physical Insight Into Substitutional N-Doped Graphene Nanoribbons With Armchair Edges

Publication Year: 2011, Page(s):926 - 930
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Electronic structures of graphene nanoribbons with armchair edges (AGNRs) containing N-substitutional impurity have been investigated, using ab initio density functional theory. It is shown that the electronic structures of the doped AGNRs are different from those of doped carbon nanotubes (CNTs). N introduces an impurity level above the conduction band minimum (CBM) in the AGNRs while an impurity... View full abstract»

• Monolithically Patterned Wide–Narrow–Wide All-Graphene Devices

Publication Year: 2011, Page(s):931 - 939
Cited by:  Papers (14)
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We investigate theoretically the performance advantages of all-graphene nanoribbon field-effect transistors (GNRFETs) whose channel and source/drain (contact) regions are patterned monolithically from a 2-D single sheet of graphene. In our simulated devices, the source/drain and interconnect regions are composed of wide GNR sections that are semimetallic, while the channel regions consist of narro... View full abstract»

• Localized Ion Implantation Through Micro/Nanostencil Masks

Publication Year: 2011, Page(s):940 - 946
Cited by:  Papers (9)  |  Patents (1)
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A method is presented that allows the definition of micrometer- and submicrometer-sized implanted structures in silicon without using photoresist patterning. The process is based on the use of stencils as masks in a conventional ion implanter, and is tested for both phosphorus and arsenic ions. Electrical characterization confirms the activation of the impurities in the implanted zones whereas top... View full abstract»

• Metallofullerenes in Composite Carbon Nanotubes as a Nanocomputing Memory Device

Publication Year: 2011, Page(s):947 - 952
Cited by:  Papers (12)
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Here, we investigate a hybrid carbon nanostructure, which comprises two single-open host nanotubes of the same radius and joined by another single-open nanotube, which is centrally located between the host nanotubes but has a smaller radius. A metallofullerene is then enclosed inside the structure to represent a bit information and is originally located inside one of the host nanotubes. The geomet... View full abstract»

• Mathematical Modeling and Analysis of a Magnetic Nanoparticle-Enhanced Mixing in a Microfluidic System Using Time-Dependent Magnetic Field

Publication Year: 2011, Page(s):953 - 961
Cited by:  Papers (13)
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An innovative time-dependent magnetically actuated mixing process based on magnetic nanoparticles (MNPs) for enhancing the mixing performance of a microfluidic system is presented in this paper. Finite-element technique that combines time-dependent magnetic field with mass transfer of species is employed for quantifying the effect of convection, diffusion, and magnetic field on the mixing performa... View full abstract»

• Surface Effects on the Jump-in Instability of Nanomechanical Structures

Publication Year: 2011, Page(s):962 - 967
Cited by:  Papers (1)
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Surface effects are indispensable for crystalline materials when the characteristic size falls into nanoscale. In this paper, the size-dependent jump-in instability of an ultrathin film, omnipresent in nanoelectromechanical systems, is analyzed by incorporating the effects of surface energies. Based on a nonclassical thin plate theory including surface effects and the thermodynamic energy balance ... View full abstract»

• Vertically Aligned ZnO Nanorod Arrays Coated with $hbox{SnO}_{bf 2}$/Noble Metal Nanoparticles for Highly Sensitive and Selective Gas Detection

Publication Year: 2011, Page(s):968 - 974
Cited by:  Papers (10)  |  Patents (1)
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Mimicking the biological olfactory receptor array that possesses large surface area for molecule capture, vertically aligned ZnO nanowire arrays, used as structural templates, were coated with SnO2/noble metal nanoparticles as active materials for fabrication of 3-D gas sensors. The gas sensors showed room-temperature responses to environmental toxic gases, such as NO2 and H<... View full abstract»

• Experimental Investigation of Quasi-Ballistic Carrier Transport Characteristics in 10-nm Scale MOSFETs

Publication Year: 2011, Page(s):975 - 979
Cited by:  Papers (1)
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In this paper, experimental investigation on quasi-ballistic carrier transportation is carried out in 10-nm scale MOSFETs. In order to extract some ballistic parameters, the channel inversion charge by the RF C-V technique is quantitatively calculated. Also, the effective channel length and the carrier mobility are carefully analyzed to calculate the mean free path in the channel region. It is fou... View full abstract»

• Rectifying Source and Drain Contacts for Effective Carrier Transport Modulation of Extremely Doped SiC Nanowire FETs

Publication Year: 2011, Page(s):980 - 984
Cited by:  Papers (3)
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Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowires (NWs) were fabricated and the electrical characterization revealed electron conduction through the NWs. Devices with either ohmic or rectifying contacts have been observed leading to two different operation modes. The transistors with ohmic-like contacts manifest a very weak gating effect and the device switch... View full abstract»

• Determination of Mechanical Properties and Actuation Behaviors of Polypyrrole–Copper Bimorph Nanoactuators

Publication Year: 2011, Page(s):985 - 990
Cited by:  Papers (2)
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This paper reports on a polypyrrole (ppy) based bimorph nanoactuator. The nanoactuator consists of ppy nanowire and Cu thin film. To create a nanoactuator, a (10 ± 5)-nm-thick Cu film was precisely deposited on one side of a (13.7 ± 1.0)-μm-long and 270 ± 20 nm diameter ppy nanowire. The bimorph was thermally actuated using the mismatch of the coefficients of thermal ex... View full abstract»

• Quantum-Dot-Based Aptamer Beacon for the Detection of Potassium Ions

Publication Year: 2011, Page(s):991 - 995
Cited by:  Papers (15)
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Monitoring serum potassium ion levels is very common in blood tests, for abnormal potassium ion levels are usually signs of many disease such as hyper blood pressure. This study reports the first use of quantum dot (QD)-based-aptamer beacons for the detection of potassium ion concentrations. In this paper, the detection of changes in potassium versus the fluorescence intensity of the beacon is obt... View full abstract»

• Design and Simulation of 2-D 2-Dot Quantum-Dot Cellular Automata Logic

Publication Year: 2011, Page(s):996 - 1003
Cited by:  Papers (11)
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The quantum-dot cellular automata (QCA) computing architecture has been proposed to not only offer scalability to the molecular level, extremely low power requirements, and THz switching, but also the promise to advance the forefront of computation beyond the conceptual limitations of current technologies. The conventional QCA architecture uses cells consisting of two electrons and four logically ... View full abstract»

• Extraction of Doping Concentration and Interface State Density in Silicon Nanowires

Publication Year: 2011, Page(s):1004 - 1009
Cited by:  Papers (8)
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The disproportionate increase of the resistance of silicon nanowires with reduced diameter is theoretically analyzed, taking into account both the effective conducting cross section and the hole concentration. Previously reported decrease in the conducting cross section and reduction of effective hole concentration that are observed when the nanowire radius is decreased were correlated with an inc... View full abstract»

• High Operating Temperature Quantum-Dot Infrared Photodetector Using Advanced Capping Techniques

Publication Year: 2011, Page(s):1010 - 1014
Cited by:  Papers (5)  |  Patents (1)
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We demonstrate an improvement in the operating temperature of a quantum dot-in-a-well (DWELL)-based infrared photodetector with spectral response observable till 250 K. This improvement was achieved through engineering the dot geometry and the quantum confinement via postgrowth capping of the quantum dots (QDs) by selecting overlying materials under various growth conditions. The effect of the cap... View full abstract»

• Reliability Impact of N-Modular Redundancy in QCA

Publication Year: 2011, Page(s):1015 - 1022
Cited by:  Papers (8)
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Nanoelectronic systems are extremely likely to demonstrate high defect and fault rates. As a result, defect and/or fault tolerance may be necessary at several levels throughout the system. Methods for improving defect tolerance, in order to prevent faults, at the component level for quantum-dot cellular automata (QCA)1 have been studied. However, methods and results considering fault to... View full abstract»

• A Novel Capacitorless DRAM Cell Using Superlattice Bandgap-Engineered (SBE) Structure With 30-nm Channel Length

Publication Year: 2011, Page(s):1023 - 1030
Cited by:  Papers (4)
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We propose a novel SiGe superlattice bandgap-engineered (SBE) capacitorless dynamic random access memory (DRAM) cell with 30-nm channel length as a next-generation DRAM cell with high storage density and long retention time for practical implementation by 2-D technology computer-aided design simulation. The SBE capacitorless DRAM cell uses a common source structure and different metal layers for t... View full abstract»

• Nitric Acid Oxidized ZrO$_2$ as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices

Publication Year: 2011, Page(s):1031 - 1035
Cited by:  Papers (2)
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In this study, ZrO2 formed by the nitric acid oxidation method is proposed to be the tunneling oxide for nonvolatile memory device applications. The sputtered Zr thin film was oxidized by immersing in the nitric acid solution (HNO3:H2O = 1:10) for 60 s at room temperature. The quality of the formed ZrO2 was also extracted by the capacitance-voltage and c... View full abstract»

• Matrix Multiplication Using Quantum-Dot Cellular Automata to Implement Conventional Microelectronics

Publication Year: 2011, Page(s):1036 - 1042
Cited by:  Papers (15)
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Quantum-dot cellular automata (QCA) shows promise as a postsilicon CMOS, low-power computational technology. Nevertheless, to generalize QCA for next-generation digital devices, the ability to implement conventional programmable circuits based on nor, and , and or gates is necessary. To this end, we devise a new QCA structure, the QCA matrix multiplier (MM), employing the standard Coulomb blocked,... View full abstract»

• Suspended Carbon Nanotube Lateral Field Emitters and Receivers

Publication Year: 2011, Page(s):1043 - 1046
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We fabricated suspended carbon nanotube lateral field emitters and receivers that are efficient, operational at low bias voltage, scalable to large scale, and able to be integrated into the conventional electronic devices. They grew from ~120-nm-thick, 100-μm-long, and 20-μm-wide floating parallel electrodes formed on silicon substrates with thick thermal silicon oxide. From the 100-... View full abstract»

• Growth of Ga$_{bm 2}$O $_{bm 3}$ Nanowires and the Fabrication of Solar-Blind Photodetector

Publication Year: 2011, Page(s):1047 - 1052
Cited by:  Papers (14)
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The authors report the growth of nanowires by heating the GaN/sapphire template. It was found that density, average length, and average diameter of the nanowires all increased as we increased the grown temperature. It was also found that β-Ga2O 3 nanowires with good crystal quality could be achieved only at high temperatures (i.e., 1050 and 1100 °C). Solar-blind... View full abstract»

• Origin of Stress Memorization Mechanism in Strained-Si nMOSFETs Using a Low-Cost Stress-Memorization Technique

Publication Year: 2011, Page(s):1053 - 1058
Cited by:  Papers (5)
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Implementation of strained-Si MOSFETs with optimum low-cost stress-memorization technique for a 40-nm technology CMOS process was demonstrated. Devices fabricated on (1 0 0) substrate with 〈1 0 0〉channel orientation provide additional 8% current drivability improvement for strained-Si nMOSFETs without any degradation of pMOSFETs performance. The stress-memorization technique (SMT) me... View full abstract»

Aims & Scope

The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Fabrizio Lombardi
Dept. of ECE
Northeastern Univ.