# IEEE Journal of Selected Topics in Quantum Electronics

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Displaying Results 1 - 25 of 46

Publication Year: 2011, Page(s): C1
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• ### IEEE Journal of Selected Topics in Quantum Electronics publication information

Publication Year: 2011, Page(s): C2
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Publication Year: 2011, Page(s):761 - 762
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• ### Introduction to the Issue on Nanowires

Publication Year: 2011, Page(s):763 - 765
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The invited and contributed papers in this issue on nanowires cover the following topics: growth, synthesis, and fabrication; electrical and optical properties; theory, modeling, and simulations; light-emitting diodes and lasers; photodetectors and solar cells; and other photonic devices including sensors. View full abstract»

• ### Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications

Publication Year: 2011, Page(s):766 - 778
Cited by:  Papers (18)
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GaAs, InAs, and InGaAs nanowires each exhibit significant potential to drive new applications in electronic and optoelectronic devices. Nevertheless, the development of these devices depends on our ability to fabricate these nanowires with tight control over critical properties, such as nanowire morphology, orientation, crystal structure, and chemical composition. Although GaAs and InAs are relate... View full abstract»

• ### Growth and Characterization of ZnSe/CdSe Multiquantum Disks

Publication Year: 2011, Page(s):779 - 784
Cited by:  Papers (1)
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The authors report the growth of high-density ZnSe/CdSe multiquantum disks on oxidized Si substrate. It was found the as-grown nanotips were tapered with the mixture of cubic zinc blende and hexagonal wurtzite structures. Also, photoluminescence intensities observed from these ZnSe/CdSe multiquantum disks were much larger than that observed from the homogeneous ZnSe. Activation energies for the Zn... View full abstract»

• ### ${bf SiO}_{bm x}$ Nanowires Grown via the Active Oxidation of Silicon

Publication Year: 2011, Page(s):785 - 793
Cited by:  Papers (10)
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Amorphous, substoichiometric silica nanowires (NWs) can be grown on gold-coated silicon wafers by high-temperature annealing in an inert ambient with a low residual O2 partial pressure, consistent with conditions required for the active oxidation of the underlying Si substrate. The vapor precursor required for NW growth is volatile SiO obtained directly from the reaction between the sub... View full abstract»

• ### InGaAs/GaAs Core–Shell Nanowires Grown by Molecular Beam Epitaxy

Publication Year: 2011, Page(s):794 - 800
Cited by:  Papers (13)
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Au-catalyzed InxGa1-xAs nanowires (NWs) and InxGa1-xAs/GaAs core-shell NWs were grown by molecular beam epitaxy on (1 1 1)B GaAs. The effects of In content, growth temperature, and V/III elemental flux ratios on NW morphology have been investigated. The structure of the NWs has been characterized by SEM and transmission electron microscopy and thei... View full abstract»

• ### Low-Temperature Facile Synthesis of ZnO Rod Arrays and Their Device Applications

Publication Year: 2011, Page(s):801 - 807
Cited by:  Papers (9)
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Different morphologies of ZnO rod arrays with tunable photoluminescence (PL) were synthesized by vapor-phase transport deposition. The morphology and luminescence properties of ZnO rod arrays were found to be dependent on the deposition temperature and can be further tuned by postgrowth annealing treatment. Crystalline ZnO rods with intense UV emission at room temperature (RT) can be synthesized u... View full abstract»

• ### Semiconductor Alloy Nanowires and Nanobelts With Tunable Optical Properties

Publication Year: 2011, Page(s):808 - 818
Cited by:  Papers (4)
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Recent advancements in the study of alloy semiconductor nanowires (NWs) and nanobelts are reviewed with a special perspective on their applications in optoelectronics with widely tunable bandgaps. Special emphasis is on the composition-graded alloy NWs. An extremely wide range of alloy compositions (thus bandgaps) can be achieved on a single substrate in a single growth run, creating an unpreceden... View full abstract»

• ### Gold-Free GaAs Nanowire Synthesis and Optical Properties

Publication Year: 2011, Page(s):819 - 828
Cited by:  Papers (27)  |  Patents (1)
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To date, the use of gold for the synthesis of nanowires has proven to be nearly impossible to circumvent, regardless of the potential negative effects on the nanowires physical properties. In this paper, the synthesis of gallium arsenide nanowires without the use of gold as a catalyst is reviewed. The review focuses on gallium-assisted growth and selective area epitaxy, revealing the common and di... View full abstract»

• ### Crystal Phases in III--V Nanowires: From Random Toward Engineered Polytypism

Publication Year: 2011, Page(s):829 - 846
Cited by:  Papers (80)
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III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to electronics, energy, and biological sensing. The structural quality of NWs is of paramount importance for the performance of such future NW-based devices. Random structural defects and polytypism occur naturally in semiconductor NWs, but progress both on the theoretical understanding and experimental contr... View full abstract»

• ### GaN Nanowires Grown by Molecular Beam Epitaxy

Publication Year: 2011, Page(s):847 - 858
Cited by:  Papers (64)  |  Patents (1)
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The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long photoluminescence lifetime, low surface recombination velocity, and high mechanical quality factor. The high purity of the nanowires grown by this method allows for controllable n-type doping. P-type doping presents m... View full abstract»

• ### Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy

Publication Year: 2011, Page(s):859 - 868
Cited by:  Papers (25)
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III-nitride nanowires (NWs) were grown on Si(111) without catalyst by plasma-assisted molecular-beam epitaxy under N-rich conditions. The influence of doping on the morphology and electrical properties was investigated. The morphology as well as the density of GaN NWs changes with Si amount. For high Si fluxes, the wire density is reduced, in addition, the NWs broaden from bottom to top. By doping... View full abstract»

• ### Fabrication of Highly Ordered Silicon Nanowire Arrays With Controllable Sidewall Profiles for Achieving Low-Surface Reflection

Publication Year: 2011, Page(s):869 - 877
Cited by:  Papers (18)
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A novel and simple approach is demonstrated for fabricating silicon nanowire arrays (SNWAs) with controllable sidewall profiles. A single-step deep-reactive-ion etching (SDRIE) is used to transfer the holography patterned photoresist template to silicon or silicon-on-insulator substrates. With the SDRIE etching process, scalloping of the sidewalls can be avoided while reserving the high-mask selec... View full abstract»

• ### Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

Publication Year: 2011, Page(s):878 - 888
Cited by:  Papers (72)  |  Patents (1)
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On Si(1 1 1) and Si(0 0 1), GaN nanowires (NWs) form in a self-induced way without the need for any external material. On sapphire, NW growth is induced by Ni collectors. Both types of NWs exhibit the wurtzite crystal structure and grow in the Ga-polar C-direction perpendicular to the substrate. The NW sidewalls are M-plane facets, although on the Ni-induced NWs also A-plane segments form, if the ... View full abstract»

• ### Probing Ultrafast Carrier Dynamics in Silicon Nanowires

Publication Year: 2011, Page(s):889 - 895
Cited by:  Papers (10)
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We present the first ultrafast optical pump-probe spectroscopic measurements, to the best of our knowledge, on silicon nanowires (SiNWs). In this study, we performed femtosecond pump-probe measurements on vapor-liquid-solid-grown SiNWs to investigate the influence of the NW diameter, pump and probe polarizations, and pump fluence on the observed dynamics while tuning the probe wavelength below and... View full abstract»

• ### Optical Applications of ZnO Nanowires

Publication Year: 2011, Page(s):896 - 906
Cited by:  Papers (6)
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This paper discusses different aspects of optical applications of ZnO nanowires NWs. After a description of the relevant synthesis and fabrication techniques, light-emitting diodes based on ZnO NW and NW arrays are introduced and different experimental realizations from the literature are discussed. The working principle of ZnO UV photodetectors is presented, and improvements and limitations of Zn... View full abstract»

• ### InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

Publication Year: 2011, Page(s):907 - 914
Cited by:  Papers (17)
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The authors present fabrication and electrical measurements of InSb nanowire field-effect transistors (FETs) and quantum dots. The devices are made on a SiO2-capped Si substrate from InSb segments of InAs/InSb heterostructured nanowires, which are grown by metalorganic vapor phase epitaxy. For the FETs, both single- and dual-gate devices are fabricated. The Si substrate is employed as t... View full abstract»

• ### Nonlinear Optical Properties of Semiconductor Nanowires

Publication Year: 2011, Page(s):915 - 921
Cited by:  Papers (6)
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The orientation dependency of nonlinear optical effects, including the second-harmonic generation (SHG) and third-harmonic generation (THG), as well as two-photon luminescence, in semiconductor nanowires (NW) are described. The mismatch of dielectric constants between nanostructures and their environment governs the rise of optical nonlinearities causing SHG even in materials with a high symmetry ... View full abstract»

• ### GaAs and InAs Nanowires for Ballistic Transport

Publication Year: 2011, Page(s):922 - 934
Cited by:  Papers (17)
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Tailoring of GaAs and InAs nanowires (NWs) to be suited for measurements of ballistic transport is discussed in this paper. Methods used to avoid imperfections most harmful for the transport properties are described. We consider the imperfections, which frequently occur in III-V NWs: occasional stacking faults, unintentional impurities (like gold atoms originating from the catalyst in the vapor-li... View full abstract»

• ### Theoretical Analysis of a Surface Plasmonic Waveguide With a Double-Petal-Shaped Air Core

Publication Year: 2011, Page(s):935 - 941
Cited by:  Papers (4)
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A kind of surface plasmonic waveguide (SPW) with a double-petal-shaped air core is designed. The propagation properties of the fundamental mode supported by this waveguide on geometrical parameters and working wavelengths are analyzed by using the finite-difference frequency-domain method. Results show that the longitudinal energy flux density is mainly distributed in the two wedged corners formed... View full abstract»

• ### Comprehensive Numeric Study of Gallium Nitride Light-Emitting Diodes Adopting Surface-Plasmon-Mediated Light Emission Technique

Publication Year: 2011, Page(s):942 - 951
Cited by:  Papers (2)
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The coupling of quantum well (QW) spontaneous emissions to surface plasmons (SPs) has been a promising technique to increase emission rate of LEDs. We carried out numeric investigations to explore the electromagnetic nature of these SP modes. It has been shown that the SP resonance frequency on a flat silver/GaN interface, and hence the corresponding emission enhancement factor can be easily tuned... View full abstract»

• ### Rigorous Full-Vectorial Solutions of Photonics Nanowires

Publication Year: 2011, Page(s):952 - 959
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The full-vectorial H and E-fields and Poynting vector profiles are calculated by using a rigorous full-vectorial formulation for silicon and gold nanowires. This paper reveals that the mode profiles of both circular silicon and gold nanowires are not circular, due to strong index contrast at the core-cladding interfaces. The modes are highly hybrid with all the six components of the electric, and ... View full abstract»

• ### Growth Simulations of Self-Assembled Nanowires on Stepped Substrates

Publication Year: 2011, Page(s):960 - 965
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The growth of self-assembled nanowires on stepped substrates is modeled by means of kinetic Monte Carlo simulations. It is found that the energy barrier at the step edges has a great effect on the formation of nanoislands on stepped substrates. As the barrier is smaller than 0.1 eV, nanowires with high aspect ratios can be obtained. The width, aspect ratio, and separation of the nanowires can be c... View full abstract»

## Aims & Scope

Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature.

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## Meet Our Editors

Editor-in-Chief
Luke F. Lester
Virginia Polytechnic Institute & State University