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# IET Optoelectronics

## Filter Results

Displaying Results 1 - 7 of 7
• ### Editorial: Selected papers from the Semiconductor and Integrated Optoelectronics (SIOE'10) Conference

Publication Year: 2011, Page(s): 99
| | PDF (65 KB)

It is a pleasure to introduce this Special Section on Semiconductor and Integrated Optoelectronics containing a selection of the many high quality and wide-ranging papers presented at the SIOE'10 Conference held in Cardiff, UK, from 29-31 March 2010. The scope of this meeting has grown significantly since the first optoelectronics meeting at Cardiff in 1972 and covers activities ranging from funda... View full abstract»

• ### Strain engineered bilayers for extending the operating wavelength of quantum dot lasers

Publication Year: 2011, Page(s):100 - 104
Cited by:  Papers (1)
| | PDF (518 KB)

The analysis of molecular-beam epitaxy (MBE) grown bilayer quantum dot (QD) laser material is reported here. Specifically, gain characteristics of 5× 'bilayer' QDs with GaAs caps and 5× 'single' QD layers with InGaAs caps were studied experimentally. A transition of lasing from the ground state to lasing via the first excited state, and subsequently the second excited state is observ... View full abstract»

• ### RF linewidth of a monolithic quantum dot mode-locked laser under resonant feedback

Publication Year: 2011, Page(s):105 - 109
| | PDF (341 KB)

The stability of a quantum dot (QD) mode-locked laser is experimentally shown to bifurcate under resonant optical feedback, which leads to either a reduction or an enhancement of the noise within the laser's cavity. These two behaviours, which are theoretically known as the nearly exact resonant and stably resonant feedback conditions, are characterised using the RF linewidth of the QD device. Und... View full abstract»

• ### Current-dependence of polarisation switching and locking in an optically injected 1550 nm vertical-cavity surface-emitting laser

Publication Year: 2011, Page(s):110 - 113
Cited by:  Papers (3)
| | PDF (290 KB)

The authors have studied the effects of polarised optical injection in a 1550 nm vertical-cavity surface-emitting laser (VCSEL) operated at currents up to 4.5 times threshold. Regions of stable injection locking have been measured for cases where the injected signal is polarised to match one of the two polarisations of the fundamental transverse mode of the solitary VCSEL. In addition regions of p... View full abstract»

• ### Mean spectral phase and detection of masked periodic signals in chaotic carriers

Publication Year: 2011, Page(s):114 - 120
| | PDF (520 KB)

In the analysis of chaos, conventional frequency-spectrum analysis has largely been overlooked in development of novel non-linear time series analysis. In particular, the phase information of chaos in the frequency spectrum has received comparatively little attention. Here the authors present an analysis of the spectral phase of chaos by means of averaged Fourier spectra for the representative L... View full abstract»

• ### Optimisation of 660 nm high-power tapered diode lasers

Publication Year: 2011, Page(s):121 - 127
| | PDF (637 KB)

Tapered diode lasers in the red spectral range with nearly diffraction-limited output are prospective light sources for display applications and analytic methods such as fluorescence microscopy. The authors have studied the influence of the number of quantum wells and the lateral design of 660 nm high-power tapered diode lasers on the output power and the beam quality. From these investigations th... View full abstract»

• ### Far-infrared response of acoustically modulated transverse optical-phonon polaritons

Publication Year: 2011, Page(s):128 - 132
| | PDF (373 KB)

The authors propose a scheme to achieve strong modification of the light properties in the terahertz (THz) range and in particular up to 70% changes in the THz reflectivity of CuCl, TlCl and LiNbO3 crystals. This is realised by using transverse optical (TO) phonons as a mediator in the interaction between an acoustic wave (AW) and a THz light field, via the strong anharmonicities of the... View full abstract»

## Aims & Scope

IET Optoelectronics covers but is not limited to the following topics: Optical and optoelectronic materials; Light sources, including LEDs, lasers and devices for lighting; Optical modulation and multiplexing; Optical fibres, cables and connectors; Optical amplifiers; Photodetectors and optical receivers; Photonic integrated circuits; Nanophotonics and photonic crystals; Optical signal processing; Holography; Displays.

Full Aims & Scope

## Meet Our Editors

Publisher
IET Research Journals