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Circuits, Devices and Systems, IEE Proceedings G

Issue 4 • Date Aug 1993

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Displaying Results 1 - 11 of 11
  • Complementary transistor technology for use in optoelectronic integrated circuits

    Publication Year: 1993 , Page(s): 279 - 284
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (508 KB)  

    A new compound semiconductor complementary transistor technology is proposed and the constituent devices demonstrated in discrete form. The n-channel transistor exhibits a peak transconductance of 110 mS/mm, a drain current density of 24 0 mA/mm and a unity current gain frequency of 9.5 GHz for a nominal gate length of 1 μm. The p-channel transistor has a peak transconductance... View full abstract»

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  • Discrete approximation of continuous-time systems: a survey

    Publication Year: 1993 , Page(s): 264 - 278
    Cited by:  Papers (1)
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (1184 KB)  

    A survey of techniques suitable for discrete approximation of continuous-time systems is presented. Most of them are assigned to two groups in which the F-transformation is utilised either directly or indirectly. The direct approach includes the time-response invariance methods, the forming element techniques, the convolution approximation and the stochastic matching methods. From among t... View full abstract»

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  • Multiple objective optimisation in a behavioural synthesis system

    Publication Year: 1993 , Page(s): 253 - 260
    Cited by:  Papers (4)
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (780 KB)  

    The authors describe the implementation of an `intelligent' silicon compiler that provides the ability to optimise a design, given as a behavioural description, with respect to multiple objectives. The user submits goals or objectives to the system, named MOODS, which automatically finds an optimal solution in the context of the user-specified constraints. The MOODS system provides a sound basis f... View full abstract»

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  • Electron drift velocity model for simulation of InGaAs JFETs

    Publication Year: 1993 , Page(s): 261 - 263
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (180 KB)  

    Simulations of InGaAs JFETs were carried out using a two-dimensional numerical simulator. The results show that the electron drift velocity field characteristic is very important in modelling the Id/Vds behaviour of these devices. From comparison with experimental results, the authors conclude that it is appropriate to use a velocity field dependence function for InGaAs, similar ... View full abstract»

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  • New designs for a sign detector and a residue to binary convertor

    Publication Year: 1993 , Page(s): 247 - 252
    Cited by:  Papers (1)
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (388 KB)  

    In this paper, two algorithms have been developed. The first one has been exploited in implementing a residue to binary convertor (R/B) for the moduli set {2k-1, 2k, 2k+1}. The new convertor is memoryless, which implies that its upper bound is not limited by a memory size. Furthermore, this convertor represents a new significant reduction in both the hardware requi... View full abstract»

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  • Ambient temperature effects on DC behaviour of GaAs MESFET devices

    Publication Year: 1993 , Page(s): 305 - 311
    Cited by:  Papers (1)
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (516 KB)  

    DC measurements at different temperatures on a wide range of different-sized MESFET devices show that temperature effects change the behaviour of the device. The results indicate that, as the drain current is reduced, the behaviour of the device becomes more susceptible to temperature effects. In the main, this is due to the temperature dependency of the pinchoff point. The data presented show tha... View full abstract»

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  • General-purpose parallel hardware approach to the routing problem of VLSI layout

    Publication Year: 1993 , Page(s): 294 - 304
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (1028 KB)  

    A novel solution to the important problem of speeding up the routing process in integrated circuit (IC) design, involving the use of general-purpose parallel computing hardware, is introduced. In the past, attempts to speed up any one stage of the VLSI design process have often resulted in a very expensive, dedicated piece of hardware which cannot be used to speed up other phases of the design pro... View full abstract»

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  • Cascade pseudomultibit noise shaping modulators

    Publication Year: 1993 , Page(s): 237 - 246
    Cited by:  Papers (2)
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (744 KB)  

    Cadcade and multibit quantisation 1-bit feedback (NA/D1) noise shaping modulators are presently considered the most attractive topologies for implementing high resolution A/D convertors. This is because the cascade concept allows stable high order noise shaping modulators to be implemented easily, and because the NA/D1 architecture allows the amount of quantisation noise handled to be reduced whil... View full abstract»

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  • Self-purging redundancy with automatic threshold adjustment

    Publication Year: 1993 , Page(s): 233 - 236
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (260 KB)  

    A self-purging system is proposed which uses a digital voter that automatically adjusts the threshold of the voter as failed modules are purged. The switch used is no more complex than the switch used by the self-purging redundancy proposed by Losq (1976). However, the system presented here can tolerate single module failures at any given time. This system is useful for applications in which aging... View full abstract»

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  • Theoretical prediction of the performance of Si and SiC bipolar transistors operating at high temperatures

    Publication Year: 1993 , Page(s): 289 - 293
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (372 KB)  

    Silicon carbide (SiC) is a promising material for semiconductor devices operated at high temperatures because of its large energy bandgap, high thermal conductivity and silicon compatibility. The authors develop an analytical model to predict and compare the DC and AC performance of SiC and conventional Si bipolar junction transistors (BJTs) at high temperatures. Based on the device parameters ava... View full abstract»

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  • Chebyshev phase of IIR networks for pulse expanding

    Publication Year: 1993 , Page(s): 285 - 288
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (252 KB)  

    The author describes a method for designing IIR allpass circuits for pulse expanding, the phase of which approximates to a squared phase in the Chebyshev sense in the given frequency region. The method is based on the solution of a linear equation system which provides a final solution with a very small number of iterative cycles View full abstract»

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