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# IEEE Transactions on Nuclear Science

## Issue 3  Part 2 • June 2011

This issue contains several parts.Go to:  Part 1  | Part 3

## Filter Results

Displaying Results 1 - 25 of 63
• ### [Front cover]

Publication Year: 2011, Page(s): C1
| PDF (64 KB)
• ### IEEE Transactions on Nuclear Science publication information

Publication Year: 2011, Page(s): C2
| PDF (40 KB)

Publication Year: 2011, Page(s):749 - 752
| PDF (92 KB)
• ### Comments by the Editors

Publication Year: 2011, Page(s): 753
| PDF (20 KB) | HTML
• ### List of reviewers

Publication Year: 2011, Page(s):754 - 755
| PDF (25 KB)
• ### NIEL Scaling: Comparison With Measured Defect Introduction Rate in Silicon

Publication Year: 2011, Page(s):756 - 763
Cited by:  Papers (4)
| | PDF (890 KB) | HTML

At low ion energies, the approximation of independent collisions between atoms starts to break down. The displacement damage threshold seems to be far less steep than the one used traditionally within the BCA approach. It has been shown in a previous paper that the Non Ionizing Energy Loss (NIEL) of low energy electrons is greatly modified by the use of a smoother threshold. In order to validate t... View full abstract»

• ### Effect of Ionizing Radiation on Defects and $1/f$ Noise in Ge pMOSFETs

Publication Year: 2011, Page(s):764 - 769
Cited by:  Papers (7)
| | PDF (655 KB) | HTML

The irradiation and annealing responses of Ge pMOSFETs have been investigated under transmission gate bias. Both the radiation-induced charge trapping and the low frequency (1/f) noise increase with total ionizing dose and decrease with annealing time. The smallest increases in noise after irradiation are observed for Ge pMOSFETs with the lowest halo implantation doses. The smallest increas... View full abstract»

• ### Modeling of the Tunneling Current in MOS Devices After Proton Irradiation Using a Nonlinear Series Resistance Correction

Publication Year: 2011, Page(s):770 - 775
Cited by:  Papers (3)
| | PDF (218 KB) | HTML

Contrary to what is expected for a damaged device, the impact of 10 MeV-energy protons on a metal-oxide-semiconductor (MOS) structure can give rise to a significant reduction of the gate tunneling current, mainly in the high bias range. In order to simulate the observed deviation, a correction to the oxide field in the Fowler-Nordheim tunneling expression is considered. Since the nature and locati... View full abstract»

• ### TID-Induced Degradation in Static and Noise Behavior of Sub-100 nm Multifinger Bulk NMOSFETs

Publication Year: 2011, Page(s):776 - 784
Cited by:  Papers (2)
| | PDF (888 KB) | HTML

This paper is concerned with the study of the total ionizing dose (TID) effects in NMOS transistors belonging to 90 and 65 nm CMOS technologies from different manufacturers. Results from static and noise measurements are used to collect further evidence for a static and noise degradation model involving charge buildup in shallow trench isolations and lateral parasitic transistor activation. Compar... View full abstract»

• ### Verilog-A Modeling of Radiation-Induced Mismatch Enhancement

Publication Year: 2011, Page(s):785 - 792
| | PDF (1181 KB) | HTML

Physical model of TID effects is embedded into BSIM3v3 model implemented using Verilog-A. Radiation-induced mismatch enhancement due to the combined action of technology variations and electrical bias difference is demonstrated by simulation. It is shown that the total ionizing dose degradation of circuit components under inequivalent electric field conditions could lead to mismatch of internal ci... View full abstract»

• ### Modeling Inter-Device Leakage in 90 nm Bulk CMOS Devices

Publication Year: 2011, Page(s):793 - 799
Cited by:  Papers (13)  |  Patents (1)
| | PDF (415 KB) | HTML

We demonstrate an analytical modeling approach that captures the effects of total ionizing dose (TID) on the Id -Vgs characteristics of field-oxide-field-effect-transistors (FOXFETs) fabricated in a low-standby power commercial bulk CMOS technology. Radiation-enabled technology computer aided design (TCAD) simulations and experimental data allow validating the m... View full abstract»

• ### Proton-Induced Mobility Degradation in FinFETs With Stressor Layers and Strained SOI Substrates

Publication Year: 2011, Page(s):800 - 807
Cited by:  Papers (7)
| | PDF (736 KB) | HTML

Proton irradiation effects on fin-type field effect transistors (FinFETs) are examined from the viewpoint of their electrical-performance parameter of mobility. They are fabricated with various types of combination of strain/stress techniques to control their mobilities. The base stress level is globally modified by means of nonstrained or strained silicon-on-insulator wafers. Some process splits,... View full abstract»

• ### Floating Gate PMOS Dosimeters Under Bias Controlled Cycled Measurement

Publication Year: 2011, Page(s):808 - 812
Cited by:  Papers (8)
| | PDF (534 KB) | HTML

Floating Gate Metal Oxide Semiconductor (FG-MOS) structures, designed and fabricated in a CMOS process, were irradiated under the Bias Controlled Cycled Measurement (BCCM) novel technique conditions. Results presented in this work show the possibility of using such structures with the BCCM technique to measure ionizing radiation absorbed dose over a range of several kGy without significant loss of... View full abstract»

• ### Laser Validation of a Non-Destructive Test Methodology for the Radiation Sensitivity Assessment of Power Devices

Publication Year: 2011, Page(s):813 - 819
Cited by:  Papers (6)
| | PDF (1417 KB) | HTML

This paper presents a new test methodology based on the characterization of transient events to perform non-destructive radiation sensitivity assessments of destructive single event effects in power devices. Laser tests and simulations are used to demonstrate its efficiency. View full abstract»

• ### Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques

Publication Year: 2011, Page(s):820 - 826
Cited by:  Papers (9)
| | PDF (552 KB) | HTML

The amounts of charge collection by single-photon absorption (SPA) and by two-photon absorption (TPA) laser testing techniques have been directly compared using specially made SOI diodes. For SPA measurements and some TPA measurements, the back substrates of the diodes were removed by etching with XeF2. With the back substrates removed, the amount of TPA induced charge collection can be... View full abstract»

• ### Heavy-Ion Induced Threshold Voltage Shifts in Sub 70-nm Charge-Trap Memory Cells

Publication Year: 2011, Page(s):827 - 833
Cited by:  Papers (2)
| | PDF (372 KB) | HTML

We investigate threshold voltage shifts induced by heavy ions in sub 70-nm charge-trap cells, based on TaN-Al2O3-SiN-SiO2-Si (TANOS) stack and compare the results with floating gate memories. Large shifts are observed, although to a smaller extent than in floating gate devices with similar feature size. Basic mechanisms leading to the heavy-ion induced charge loss/... View full abstract»

• ### Impact of Process Variations on SRAM Single Event Upsets

Publication Year: 2011, Page(s):834 - 839
Cited by:  Papers (20)
| | PDF (892 KB) | HTML

Process variations affect the single event (SE) hardness of SRAM cells. Monte-Carlo simulations show this effect and can be used to quantify the significance of process parameter shifts on SRAM SE upset probabilities. View full abstract»

• ### Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

Publication Year: 2011, Page(s):840 - 847
Cited by:  Papers (46)
| | PDF (804 KB) | HTML

The relative contribution of the radial ionization profile on SEE prediction is investigated using MUSCA-SEP3 , in comparison with the classical approach considering the ion track as a series of punctual charges. The new approach is validated against experimental results, for three technology generations of PDSOI transistors and for two generations of SOI SRAM cells, showing better agre... View full abstract»

• ### 14 MeV Neutrons SEU Cross Sections in Deep Submicron Devices Calculated Using Heavy Ion SEU Cross Sections

Publication Year: 2011, Page(s):848 - 854
Cited by:  Papers (6)
| | PDF (224 KB) | HTML

An analytical model is developed to calculate neutron-induced SEU cross section in deep submicron devices from heavy ion SEU cross section. It is based on the energy spectra of the secondaries of n +Si nuclear reactions which yields the LET distribution of all secondary ions. The integration of this distribution function with the measured heavy ion cross section vs. LET yields the n-SEU cro... View full abstract»

• ### Impact of Resistive-Open Defects on SRAM Error Rate Induced by Alpha Particles and Neutrons

Publication Year: 2011, Page(s):855 - 861
Cited by:  Papers (7)
| | PDF (446 KB) | HTML

This paper presents the results of SPICE simulations of terrestrial radiation induced effects on SRAM cells in which resistive-open defects are introduced. This kind of defect is difficult to be detected with standard manufacturing tests. Although the presence of the defect may not affect the memory functionality when not exposed to radiation, it alters the radiation induced error rate of the cell... View full abstract»

• ### Simulation of Single and Multi-Node Collection: Impact on SEU Occurrence in Nanometric SRAM Cells

Publication Year: 2011, Page(s):862 - 869
Cited by:  Papers (11)
| | PDF (1226 KB) | HTML

This paper presents the study of the multi collection phenomena in sub-micrometric SRAMs (90 and 65 nm bulk technologies). It compares the relative influence of nMOS and pMOS sensitive zones within the cell by means of electrical simulations. The impact on the definition of an event criterion is discussed. View full abstract»

• ### Circuit Effect on Collection Mechanisms Involved in Single Event Phenomena: Application to the Response of a NMOS Transistor in a 90 nm SRAM Cell

Publication Year: 2011, Page(s):870 - 876
Cited by:  Papers (3)
| | PDF (1167 KB) | HTML

SEU is studied in a 90 nm SRAM cell with different simulation approaches. The SRAM cell main SEU parameters (maximum current peak, collected charge, threshold LET) are extracted and compared. It is shown that the simulation conditions have a direct impact on the cell behavior and so on the SEU prediction. Moreover, not accounting for voltage variations induced by the particle generation in the cir... View full abstract»

• ### Accurate Modeling of Single-Event Transients in a SiGe Voltage Reference Circuit

Publication Year: 2011, Page(s):877 - 884
Cited by:  Papers (9)
| | PDF (1093 KB) | HTML

Single-event transients (SETs) are modeled in a SiGe voltage reference using compact model and full 3-D mixed-mode TCAD simulations. The effect of bias dependence and circuit loading on device-level transients is examined with regard to the voltage reference circuit. The circuit SET simulation approaches are benchmarked against measured data to assess their effectiveness in accurate modeling of SE... View full abstract»

• ### Layout Technique for Single-Event Transient Mitigation via Pulse Quenching

Publication Year: 2011, Page(s):885 - 890
Cited by:  Papers (43)
| | PDF (353 KB) | HTML

A layout technique that exploits single-event transient pulse quenching to mitigate transients in combinational logic is presented. TCAD simulations show as much as 60% reduction in sensitive area and 70% reduction in pulse width for some logic cells. View full abstract»

• ### Dose Rate and Static/Dynamic Bias Effects on CCDs Degradation

Publication Year: 2011, Page(s):891 - 898
Cited by:  Papers (8)
| | PDF (966 KB) | HTML

Dark current evolution in Charge Coupled Devices (CCD) is experimentally studied with Co-60 and proton irradiations. Linear CCDs are irradiated in various static and dynamic bias conditions. Annealing effects are discussed and on-ground data are compared to in-flight data. Presented results on ionization-induced dark current increase in CCDs have demonstrated the impact of the sensor operational c... View full abstract»

## Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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## Meet Our Editors

Editor-in-Chief
Paul Dressendorfer
11509 Paseo del Oso NE
Albuquerque, NM  87111  USA