Issue 8 • Date Aug 1993
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A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs
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PDF (300 KB)
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Process and device characterization for a 30-GHz
f T submicrometer double poly-Si bipolar technology using BF2 -implanted base with rapid thermal process
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PDF (1100 KB)
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Observation of resonant tunneling at room temperature in GaInP/GaAs/GaInP double-heterojunction bipolar transistor
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PDF (616 KB)
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Generalized analytical transport modeling of the DC characteristics of heterojunction bipolar transistors
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PDF (652 KB)
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Geometric factor for Hall mobility characterization using the van der Pauw dual configuration
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PDF (324 KB)
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Gate current in AlInAs/GaInAs heterostructure insulated-gate field-effect transistors (HIGFETs)
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PDF (572 KB)
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Emission characteristics of silicon vacuum triodes with four different gate geometries
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PDF (740 KB)
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Impact of reactive ion etching using O2+CHF3 plasma on the endurance performance of FLOTOX EEPROM cells
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PDF (264 KB)
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Coherent transistor
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PDF (800 KB)
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Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond
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PDF (308 KB)
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Multiterminal light-emitting logic device electrically reprogrammable between OR and NAND functions
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PDF (592 KB)
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A practical high-latchup immunity design methodology for internal circuits in the standard cell-based CMOS/BiCMOS LSIs
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PDF (436 KB)
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Semiconductor parameters extraction using cathodoluminescence in the scanning electron microscope
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PDF (688 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


