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# IEEE Microwave and Wireless Components Letters

## Filter Results

Displaying Results 1 - 25 of 26

Publication Year: 2011, Page(s):C1 - C4
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• ### IEEE Microwave and Wireless Components Letters publication information

Publication Year: 2011, Page(s): C2
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• ### Combined Piecewise Linear Recursive Convolution-Bilinear Transform Implementation of the CFS-PML for Unmagnetized Plasma

Publication Year: 2011, Page(s):277 - 279
Cited by:  Papers (2)
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The complex frequency shifted (CFS) perfectly matched layer (PML) has been proven to be more efficient in attenuating evanescent waves and reducing late-time reflections than the original PML. In this letter, the piecewise linear recursive convolution (PLRC) method is combined with the bilinear transform (BT) to implement the CFS-PML for unmagnetized plasma simulation. Compared to the original bil... View full abstract»

• ### Accelerating Space Mapping Optimization with Adjoint Sensitivities

Publication Year: 2011, Page(s):280 - 282
Cited by:  Papers (11)
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We propose a procedure for accelerating the space mapping optimization process. Exploiting both fine- and surrogate-model sensitivity information, a good mapping between the two model spaces is efficiently obtained. This results in a significant speed-up over direct gradient-based optimization of the original fine model and enhanced performance compared with other space mapping approaches. Our app... View full abstract»

• ### On the Stability of the Finite-Difference Time-Domain Modeling of Lorentz Media

Publication Year: 2011, Page(s):283 - 285
Cited by:  Papers (3)
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The stability analysis is presented for the finite-difference time-domain modeling of a Lorentz dielectric. In particular this study is focused on the Young scheme that employs the polarizability and the polarization current for the representation of the Lorentz permittivity, and collocates temporally the magnetic field with the polarization current. The Routh criterion is employed for the stabili... View full abstract»

• ### A 3-D Smith Chart Based on the Riemann Sphere for Active and Passive Microwave Circuits

Publication Year: 2011, Page(s):286 - 288
Cited by:  Papers (9)
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This letter proposes a spherical 3-D Smith Chart suitable for representing both active and passive microwave circuits. Using the mathematical concept of the Riemann sphere, the extended reflection coefficient plane is transformed into the surface of the unit sphere. Since the proposed Smith Chart compiles the whole complex plane, all possible loads are included. A simple graphic tool is thus obtai... View full abstract»

• ### Comparative Layout Study of Stacked CMOS Synthetic Quasi-TEM Lines Separated by the Meshed Ground Shield and its Application to 180$^{\circ}$ Hybrid Design

Publication Year: 2011, Page(s):289 - 291
Cited by:  Papers (2)
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This work investigates the coupling phenomena of the synthetic quasi-TEM transmission lines (TLs) with the differential layout in multilayer structure. The numerical method based on the normal mode parameters calculates the couplings between two stacking TLs shared with a common mesh ground plane. The theoretical investigations show that the TL in the orthogonal layout has the lowest coupling. Thi... View full abstract»

• ### Self Biased Y-Junction Circulator at ${\rm K}_{\rm u}$ Band

Publication Year: 2011, Page(s):292 - 294
Cited by:  Papers (23)
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A self-biased microstrip Y-junction circulator was designed, fabricated and tested at Ku band utilizing strontium M-type barium ferrite. The junction circuit consisted of a dielectric slab resting upon a polished thin composite plate of bulk strontium M-type hexaferrite. This approach proved to be mechanically rigid and compatible with the fabrication of integrated circuits yielding pra... View full abstract»

• ### MMIC Compact Filters With Third Harmonic Suppression for V-Band Applications

Publication Year: 2011, Page(s):295 - 297
Cited by:  Papers (4)
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A scheme for V-band band-pass filter (BPF) with narrowband performance and compact chip size is implemented using the 0.15 μm GaAs pHEMT process. Based on the even- and odd-mode analysis in V-band BPF, the feature of the third harmonic suppression can be concisely verified. The proposed structure provides excellent selectivity at both sides of the passband and facilitates the realization of... View full abstract»

• ### A Dual-Band Bandpass Filter Using a Single Dual-Mode Ring Resonator

Publication Year: 2011, Page(s):298 - 300
Cited by:  Papers (53)
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A simple microstrip ring-resonator is presented for novel design of dual-band dual-mode bandpass filters with good isolation and upper-stopband performance. By increasing the length of the loaded open-circuited stub, the two first-order degenerate modes are excited and slit for the use of the first passband, while one of the third-order degenerate modes moves downward and forms the second passband... View full abstract»

• ### Sharp Roll-Off Lowpass Filter With Wide Stopband Using Stub-Loaded Coupled-Line Hairpin Unit

Publication Year: 2011, Page(s):301 - 303
Cited by:  Papers (45)
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A novel application of shunt open-stubs at the feed points of a center fed coupled-line hairpin resonator is presented for the design of compact lowpass filter (LPF) with very wide stopband. The transmission zeros of the basic unit are minimally affected by its association with the stubs. The stopband bandwidth and filter roll-off rates achieved here are larger than those achieved earlier. A proto... View full abstract»

• ### Reply to Comments on "Novel ultra-wideband bandpass filter using shorted coupled lines and transversal transmission line"

Publication Year: 2011, Page(s): 304
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In replying to the comment on their original paper [ibid., vol. 21, no. 9 pp 510, 2011] the authors state their appreciation of the good work previously published by Sanchez-Soriano et al. (2009) in the UWB bandpass filter (BPF) structure realized with two shorted coupled lines and a 270° transmission line. It is noted that the earlier work was not found in a literature search before the a... View full abstract»

• ### Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate Design

Publication Year: 2011, Page(s):305 - 307
Cited by:  Papers (1)
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We report on the small-signal and power performance of AlGaN/GaN RF switches with novel gate design incorporating regular metal gate deposited over a “slow” gate electrode formed by a low-conducting InGaN film. SPDT RF switch MMICs using hybrid “fast/slow” gate AlGaN/GaN MOSHFETs show superior transmission characteristics while maintaining the same high-power and high-l... View full abstract»

• ### Bilateral Gain-Compensated Negative Group Delay Circuit

Publication Year: 2011, Page(s):308 - 310
Cited by:  Papers (15)
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We present a symmetric reciprocal (bilateral) gain-compensated negative group delay circuit, operating at 310 MHz and exhibiting a group delay of -0.5 ns. The circuit allows the conditionally stable gain-compensated propagation in both directions. The analytically predicted results are validated with frequency domain measurements, and stability is examined. Application of the circuit to a bilatera... View full abstract»

• ### A K-Band CMOS Phase Shifter MMIC Based on a Tunable Composite Metamaterial

Publication Year: 2011, Page(s):311 - 313
Cited by:  Papers (4)
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This letter presents a K-band phase shifter monolithic microwave integrated circuit (MMIC) which is based on electrically tunable composite left- and right-handed metamaterials. This structure utilizes both positive and negative phase shifting metamaterial characteristics to allow for a wide tuning range. This is achieved by varying both the capacitance and inductance of the metamaterial structure... View full abstract»

• ### A High Efficiency Differential 60 GHz VCO in a 65 nm CMOS Technology for WSN Applications

Publication Year: 2011, Page(s):314 - 316
Cited by:  Papers (20)
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This letter presents a differential voltage controlled oscillator (VCO) implemented in a 65 nm bulk CMOS technology for the unlicensed 60 GHz band. It achieves a record efficiency of 4.9% by generating a maximum differential output power of -0.9 dBm while drawing 16.5 mA from a 1 V supply (including buffers). This VCO is thus perfectly suited for the use in a fully integrated 60 GHz transceiver fo... View full abstract»

• ### A $Q$ -Band Injection-Locked Frequency Divider With Inductive Feedback for a Locking Range Enhancement

Publication Year: 2011, Page(s):317 - 319
Cited by:  Papers (5)
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An injection-locked frequency divider (ILFD) with an inductive feedback for enhanced locking range has been developed in a commercial 0.13 μm Si RFCMOS technology and compared with a conventional ILFD. The proposed ILFD showed a significant improvement in the locking range over the conventional ILFD, operating at a frequency range of 43.60-48.95 GHz. The dc power consumption of the ILFD was... View full abstract»

• ### A 59–66 GHz Highly Stable Millimeter Wave Amplifier in 130 nm CMOS Technology

Publication Year: 2011, Page(s):320 - 322
Cited by:  Papers (6)
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The design and fabrication of four-stage cascaded mm-wave low noise amplifiers (LNAs) in a 130 nm CMOS technology are presented. The simultaneous high stability factor and low noise figure are obtained using proper inductors in both gate and source of the transistor. Measured gain of 14.7 dB with a 7 GHz bandwidth has been achieved. The larger inductors are realized with microstrip lines to improv... View full abstract»

• ### A 60 GHz Broadband Stacked FET Power Amplifier Using 130 nm Metamorphic HEMTs

Publication Year: 2011, Page(s):323 - 325
Cited by:  Papers (18)
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A V-band monolithic microwave integrated circuit power amplifier (PA) using metamorphic high electron mobility transistors (mHEMTs) is developed using a stacked-FET structure. Design methodology to optimize the series power combining power amplifiers at millimeter-waves is also presented. The fabricated PA using triple-stacked 130 nm mHEMTs shows a gain of 16 dB and a saturated output power of 20 ... View full abstract»

• ### An 80 GHz High Gain Double-Balanced Active Up-Conversion Mixer Using 0.18 $mu{rm m}$ SiGe BiCMOS Technology

Publication Year: 2011, Page(s):326 - 328
Cited by:  Papers (10)
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This letter reports the performance of a W-band (75-110 GHz) high gain double-balanced active up-conversion mixer fabricated in a low-cost 200 GHz f T and f max 0.18 μm SiGe BiCMOS technology. Integrated on-chip baluns are used at RF and LO ports to facilitate on-wafer characterization. The mixer achieves a measured single sideband (SSB) power conversion gain of 6.6 dB... View full abstract»

• ### A 92 GHz Bandwidth Distributed Amplifier in a 45 nm SOI CMOS Technology

Publication Year: 2011, Page(s):329 - 331
Cited by:  Papers (17)
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A low-power cascode distributed amplifier is demonstrated in a 45 nm silicon-on-insulator (SOI) CMOS process. The amplifier achieves a 3 dB bandwidth of 92 GHz. The peak gain is 9 dB with a gain-ripple of less 1.5 dB over the 3 dB bandwidth. The group-delay variation is under ±4.7 ps over the 3 dB bandwidth. The amplifier consumes 73.5 mW from a 1.2 V supply and results in a gain-bandwidth ... View full abstract»

• ### A Single-Waveguide In-Phase Power-Combined Frequency Doubler at 190 GHz

Publication Year: 2011, Page(s):332 - 334
Cited by:  Papers (16)  |  Patents (1)
| | PDF (499 KB) | HTML

This work represents the first demonstration of in-phase power-combined frequency multipliers above 100 GHz based on a dual-chip single-waveguide topology, which consists of two integrated circuits symmetrically placed along the E-plane of a single transmission waveguide. This strategy increases by a factor of 2 the maximum sustainable input power with regard to traditional waveguide multipliers. ... View full abstract»

• ### 235 GHz Amplifier Using 150 nm InP HBT High Power Density Transistor

Publication Year: 2011, Page(s):335 - 337
Cited by:  Papers (10)
| | PDF (275 KB) | HTML

In this letter, a four-stage 235 GHz heterojunction bipolar transistor (HBT) amplifier is reported. Each stage uses a single-emitter 0.15 × 3 μm2 InP HBT with collector current density of 25 mA/μm2, maximum frequency of oscillation (fmax) greater than 500 GHz, and a cutoff frequency (fT) of 320 GHz. The MMIC amplifier is realized ... View full abstract»

Publication Year: 2011, Page(s): 338
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Publication Year: 2011, Page(s):339 - 340
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## Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

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## Meet Our Editors

Editor in Chief
N. Scott Barker
Dept. Elect. Comp. Eng.
University of Virginia
Charlottesville, VA 22904
barker@virginia.edu
dsk6n@virginia.edu