# IEEE Transactions on Electron Devices

## Filter Results

Displaying Results 1 - 25 of 56

Publication Year: 2011, Page(s):C1 - 582
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• ### IEEE Transactions on Electron Devices publication information

Publication Year: 2011, Page(s): C2
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• ### What is in a page charge?

Publication Year: 2011, Page(s): 583
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• ### Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage

Publication Year: 2011, Page(s):584 - 592
Cited by:  Papers (34)
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We study the drift behavior of RESET resistance RRESET and threshold switching voltage Vth in phase-change memory (PCM) and their temperature dependence. To extend the temperature-dependent measurement to microsecond time scales, we integrate an innovative micro-thermal stage (MTS) on the PCM cell. The MTS changes the temperature of the programmed region of the PCM cell withi... View full abstract»

• ### Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications

Publication Year: 2011, Page(s):593 - 599
Cited by:  Papers (9)
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We demonstrated a 4H-SiC vertical Schottky diode for betavoltaic application using interdigit front metallization. A relevant increase in the betavoltaic short-circuit current with respect to a device with a continuous standard front electrode was achieved with this novel layout allowing to collect also low-energy electrons. In particular, by irradiating the device with a monochromatic electron be... View full abstract»

• ### Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo

Publication Year: 2011, Page(s):600 - 608
Cited by:  Papers (10)
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In this paper, we report a 3-D Monte Carlo (MC) simulation methodology that includes complex quantum confinement effects captured through the introduction of robust and efficient density gradient (DG) quantum corrections (QCs), which has been used to introduce “ab initio ” scattering from quantum confinement fluctuations in ultrathin body silicon-on-insulator metal-oxide-semiconducto... View full abstract»

• ### Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability—A Model-Based Approach

Publication Year: 2011, Page(s):609 - 616
Cited by:  Papers (21)
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This paper investigates the cell stability of recently introduced four-transistor (4T) and conventional six-transistor (6T) fin-shaped field-effect transistor static random access memory (SRAM) cells operating in a subthreshold region using an efficient model-based approach to consider the impact of device variations. Compared with the 6T cell, this paper indicates that 4T SRAM cells exhibit a bet... View full abstract»

• ### Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated With a Full Replacement Gate Process

Publication Year: 2011, Page(s):617 - 622
Cited by:  Papers (6)
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Terbium scandate (TbScO3) and lanthanum scan date (LaScO3) have been investigated as gate dielectrics for metal-oxide-semiconductor field-effect transistors on both silicon-on-insulator (SOI) and strained SOI (sSOI) substrates. X-ray photoelectron spectroscopy analysis revealed the presence of a silicate at the interface for TbScO3 on Si, whereas a silicate/SiO2-li... View full abstract»

• ### A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory

Publication Year: 2011, Page(s):623 - 630
Cited by:  Papers (13)
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A novel random telegraph signal (RTS) method is proposed to characterize the lateral distribution of injected charge in program and erase states in a nor-type silicon-oxide-nitride-oxide-silicon Flash memory. The concept of this method is to use RTS to extract an oxide trap position in the channel and then to use the trap and RTS as internal probe to detect a local channel potential change resulti... View full abstract»

• ### Fast $V_{rm TH}$ Transients After the Program/Erase of Flash Memory Stacks With High-$k$ Dielectrics

Publication Year: 2011, Page(s):631 - 640
Cited by:  Papers (13)
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A fast response technique is developed to investigate the short-term postprogram and post-erase discharge in Flash memory devices. The procedure is based on fast VTH-evaluation methods developed for bias temperature instability and provides the transient characteristics after 20 ms under the program or erase conditions. The following different structures are investigated: 1) SiO2 View full abstract»

• ### Impacts of Multiple-Gated Configuration on the Characteristics of Poly-Si Nanowire SONOS Devices

Publication Year: 2011, Page(s):641 - 649
Cited by:  Papers (4)
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In this paper, we have proposed a simple and novel way to fabricate poly-Si nanowire (NW)-silicon-oxide-nitride-oxide-silicon (SONOS) devices with various gate configurations. Three types of devices having various gate configurations, such as side gated, -shaped gated , and gate-all-around (GAA), were successfully fabricated and characterized. The experimental results show that, owing to the super... View full abstract»

• ### Completely Quantum–Mechanical Extraction of Equivalent Oxide Thickness of PMOS Gate Insulator

Publication Year: 2011, Page(s):650 - 657
Cited by:  Papers (1)
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To cope with the growing problem of device variability from the viewpoint of global variability, the authors developed a completely quantum-mechanical (QM) capacitance voltage (C-V) simulator of polycrystalline-Si-gate p-channel metal-oxide-semiconductor (PMOS) devices in a similar way to the previous one for n-channel MOS (NMOS). The simulator was entirely based on experimental results and did no... View full abstract»

• ### Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages

Publication Year: 2011, Page(s):658 - 663
Cited by:  Papers (3)
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Advanced silicon impact-ionization models are linked with simple accurate 1-D breakdown-voltage formulas for p-n step junctions. The models are useful for ab initio calculations and improve the accuracy of older models due to a new parameterization based on a numerical simulation. New parameters for effective impact-ionization coefficients are presented for Chynoweth and Fulop formulations. The pa... View full abstract»

• ### Driving Device Comparison for Phase-Change Memory

Publication Year: 2011, Page(s):664 - 671
Cited by:  Papers (6)
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A study is conducted to investigate the relative advantages of different driving devices for phase-change memory cells using 3-D numerical device simulation. Among various possible choices, p-n diodes and vertical gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied in detail as they represent distinct classes of driving devices. Different performance para... View full abstract»

• ### A New Cost-Effective Metal–Insulator–Metal Capacitor Processed at 350 $^{circ}hbox{C}$ Using $hbox{Ni}_{2}hbox{Si}$ Fully Silicided Amorphous Silicon Electrodes

Publication Year: 2011, Page(s):672 - 676
Cited by:  Papers (5)
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Without requiring noble metal materials, a novel low-cost Ni2Si/TiO2/Ni2Si metal-insulator-metal (MIM) capac itor processed at 350°C has been developed using nickel fully sili cided (Ni-FUSI) amorphous silicon electrodes. A high capacitance density of 17 fF/μm2 along with a low top-electrode resistivity of ~38 μΩ · cm w... View full abstract»

• ### Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor

Publication Year: 2011, Page(s):677 - 683
Cited by:  Papers (60)
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A tunnel field-effect transistor (TFET) for which the device operation is based upon a band-to-band tunneling mechanism is very attractive for low-power ultralarge-scale integration circuits. A detailed investigation, with the help of extensive device simulations, of the effects of a spacer dielectric on the device performance of a TFET is reported in this paper. The effects of varying the dielect... View full abstract»

• ### Comprehensive Study on Negative Capacitance Effect Observed in MOS(n) Capacitors With Ultrathin Gate Oxides

Publication Year: 2011, Page(s):684 - 690
Cited by:  Papers (7)
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Negative capacitance (NC) was observed in a MOS capacitor grown on an n-type substrate with ultrathin gate oxide film. The NC effect was studied by considering the oxide thickness, the lateral nonuniformity of oxide layers, the current conduction mechanism, and the minority carrier response. It was found that the NC effect turned on at the flatband voltage and was mainly attributed to local electr... View full abstract»

• ### A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering

Publication Year: 2011, Page(s):691 - 697
Cited by:  Papers (8)
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We propose a model for partially ballistic metal-oxide-semiconductor field-effect transistors (MOSFETs) and for channel backscattering that is an alternative to the well-known Lundstrom model (LM) and is more accurate from the point of view of the actual energy distribution of carriers. The key point is that we do not use the concept of “virtual source.” Our model differs from the LM... View full abstract»

• ### Two-Dimensional Analysis of Field-Plate Effects on Surface-State-Related Current Transients and Power Slump in GaAs FETs

Publication Year: 2011, Page(s):698 - 703
Cited by:  Papers (5)
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In this paper, we carry out a 2-D transient analysis of field-plate GaAs metal-semiconductor field-effect transistors (FETs) by taking surface states into account. Quasi-pulsed current-voltage curves are derived from the transient characteristics. We show that drain lag and current slump (power slump) due to surface states are reduced by introducing a field plate because the fixed potential at the... View full abstract»

• ### Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

Publication Year: 2011, Page(s):704 - 708
Cited by:  Papers (30)
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We have carried out 2-D simulation of N-polar and Ga-polar AlGaN/GaN HEMTs to investigate short-channel effects in highly scaled devices. N-polar HEMTs were found to have better drain-induced barrier lowering (DIBL) suppression than Ga-polar HEMTs. The short-channel effects were found to originate from the 2-D potential distribution in the channel and space-charge-limited current through the buffe... View full abstract»

• ### Coplanar Waveguides on High-Resistivity Silicon Substrates With Attenuation Constant Lower Than 1 dB/mm for Microwave and Millimeter-Wave Bands

Publication Year: 2011, Page(s):709 - 715
Cited by:  Papers (8)
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Coplanar waveguides (CPWs) with extremely low loss have been successfully developed on high-resistivity silicon (HR-Si) substrates as interposers of multichip modules for microwave and millimeter-wave bands. The attenuation constant of these CPWs on HR-Si is less than 1 dB/mm for frequencies up to 100 GHz, which is comparable with that of CPWs on semi-insulating compound semiconductor substrates. ... View full abstract»

• ### Tunneling Processes in a Triangular Multibarrier Semiconductor Heterostructure

Publication Year: 2011, Page(s):716 - 719
Cited by:  Papers (3)
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The study of the kinetics of tunneling represents an important topic related to the development of high-speed electronic devices. In this paper, we analyze the resonant-tunneling lifetime of different arrangements, with the aim of comparing the responses of rectangular and triangular multibarrier semiconductor heterostructures (GaAs/AlGaAs). The results indicate that the introduction of a triangul... View full abstract»

• ### Proposal of High-Electron Mobility Transistors With Strained InN Channel

Publication Year: 2011, Page(s):720 - 724
Cited by:  Papers (20)  |  Patents (1)
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By using a Schrödinger-Poisson equation solver, we calculate band diagrams of potentially record fast III-N high electron mobility transistors (HEMTs), which are based on strained InN channels. Assuming cation polarity, pseudomorphic HEMT devices are proposed with a relaxed InAIN buffer layer having Al mole fraction in the range of 0.10-0.15 and with an InAIN barrier layer. Calculations in... View full abstract»

• ### A Novel Transparent AZO-Gated $hbox{Al}_{0.2} hbox{Ga}_{0.8}hbox{As/In}_{0.2}hbox{Ga}_{0.8}hbox{As}$ pHEMT and Photosensing Characteristics Thereof

Publication Year: 2011, Page(s):725 - 731
Cited by:  Papers (5)
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A novel transparent Al-doped ZnO (AZO)-gated Al0.2Ga0.8As/In0.2Ga0.8As pseudomorphic high-electron mobility transistor (pHEMT) has been comprehensively investigated. The proposed AZO-gated pHEMT has demonstrated superior temperature-dependent performance, including two-terminal gate-drain breakdown/turn-on voltages of - 63/3.4 (-56.4/3.4) V, an intrinsic... View full abstract»

• ### Color Range Images Captured by a Four-Phase CMOS Image Sensor

Publication Year: 2011, Page(s):732 - 739
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As 3-D displays become more common, the demand for 3-D-related products is rapidly increased. Three-dimensional image sensors based on the time-of-flight (TOF) technique are one of these products and are applied to many applications. In this paper, a new pixel based on the continuous-wave modulation method was proposed to measure the TOF and was embedded in a test complementary metal-oxide-semicon... View full abstract»

## Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy