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Device and Materials Reliability, IEEE Transactions on

Issue 4 • Date Dec. 2010

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Displaying Results 1 - 21 of 21
  • [Front cover]

    Page(s): C1
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  • IEEE Transactions on Device and Materials Reliability publication information

    Page(s): C2
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  • Table of contents

    Page(s): 413
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  • Editorial Kudos to Our Reviewers

    Page(s): 414
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  • Confidentiality of the review process

    Page(s): 415
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  • What is in a page charge?

    Page(s): 416
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  • Introduction to the Extreme Environment Technology and Reliability Special Issue

    Page(s): 417
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  • Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

    Page(s): 418 - 426
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1067 KB) |  | HTML iconHTML  

    The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for applications where high temperature is required. The metal-oxide-semiconductor (MOS)-controlled power devices are the most favorable structure; however, it is widely believed that silicon oxide on SiC is physically limited, particularly at high temperatures. Therefore, experimental measurements of long-term reliability of oxide at high temperatures are necessary. In this paper, time-dependent dielectric-breakdown measurements are performed on state-of-the-art 4H-SiC MOS capacitors and double-implanted MOS field-effect transistors (DMOSFET) with stress temperatures between 225°C and 375°C and stress electric fields between 6 and 10 MV/cm. The field-acceleration factor is around 1.5 dec/(MV/cm) for all of the temperatures. The thermal activation energy is found to be ~ 0.9 eV, independent of the electric field. The area dependence of Weibull slope is discussed and shown to be a possible indication that the oxide quality has not reached the intrinsic regime and further oxide-reliability improvements are possible. Since our reliability data contradict the widely accepted belief that silicon oxide on SiC is fundamentally limited by its smaller conduction-band offset compared with Si, a detailed discussion is provided to examine the arguments of the early predictions. View full abstract»

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  • Testing the Temperature Limits of GaN-Based HEMT Devices

    Page(s): 427 - 436
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    The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500°C, InAlN/GaN HEMTs have been operated up to 900°C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration. View full abstract»

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  • Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics

    Page(s): 437 - 448
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    “Extreme environment” electronics represent an important niche market in the trillion dollar global electronics industry and span the operation of electronic circuits and systems in surroundings lying outside the domain of conventional commercial or military specifications. Such extreme environments might include, for instance, the following: 1) operation down to very low temperatures (e.g., to 77 K or even 4.2 K or below); 2) operation up to very high temperatures (e.g., to 200°C or even 300°C); 3) operation across very wide and/or cyclic temperature swings (e.g., -230°C +120°C night to day, as found on the lunar surface); 4) operation in a radiation environment (e.g., in space while orbiting the Earth); or 5) at worst case even with all four simultaneously. The unique bandgap-engineered features of silicon-germanium (SiGe) heterojunction bipolar transistors and the electronic circuits built from them offer a considerable potential for simultaneously coping with all four of these extreme environments, potentially with no process modifications, ultimately providing compelling advantages at the integrated circuit and system level across a wide class of envisioned commercial and defense applications. Here, we detail the nuances associated with using SiGe technology for extreme environment electronics, paying particular attention to recent developments in the field. View full abstract»

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  • Space Radiation Effects and Reliability Considerations for Micro- and Optoelectronic Devices

    Page(s): 449 - 459
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (505 KB) |  | HTML iconHTML  

    The interplay between radiation effects and reliability is discussed for micro- and optoelectronic devices. Topics discussed include basic approaches such as burn-in and electrical screening that are used to improve component reliability, synergistic effects between reliability and radiation effects, the impact of microdose damage from heavy ions on reliability of high-density digital circuits, and assessing the overall risk to components in space that are subjected to overstress conditions. View full abstract»

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  • Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors

    Page(s): 460 - 475
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    Thin-film transistors (TFTs) fabricated using amorphous oxide semiconductors (AOS) exhibit good electron mobility (5 to >; 50 cm2/V · s), they are transparent, and they can be processed at low temperatures. These new materials show a great promise for high-performance large-area electronics applications such as flexible electronics, transparent electronics, and analog current drivers for organic light-emitting diode displays. Before any of these applications can be commercialized, however, a strong understanding of the stability and reliability of AOS TFTs is needed. The purpose of this paper is to provide a comprehensive review and summary of the recently emerging work on the stability and reliability of AOS TFTs with respect to illumination, bias stress, ambient effects, surface passivation, mechanical stress, and defects, as well as to point out areas for future work. An overview of the TFT operation and expected reliability concerns as well as a brief summary of the instabilities in the well-known Si3N4/a-Si:H system is also included. View full abstract»

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  • ESD Tolerance of GMR and TMR Heads Within Hard Disk Drives

    Page(s): 476 - 481
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    Electrostatic discharge (ESD) tolerance is discussed for giant magnetoresistive (GMR) and tunneling magnetoresistive (TMR) heads within hard disk drives (HDDs). There are two kinds of testing methods for ESD: the component ESD method with Human Body Model or Machine Model and the IEC61000-4-2 testing method. The IEC61000-4-2 testing method for GMR and TMR heads within head gimbal assembly (HGA), head stack assembly (HSA), and HDD was surveyed first, and the ESD tolerance at each state of HGA, HSA, and HDD was evaluated. The equivalent circuits for three states were proposed and proved to be consistent with experimental results by the IEC61000-4-2 testing method. View full abstract»

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  • The Role of High-Field Stress in the Negative-Bias Temperature Instability

    Page(s): 482 - 491
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (790 KB) |  | HTML iconHTML  

    In this paper, a fast drain-current measurement methodology which supports the standard threshold voltage and transconductance extractions associated with the fast dynamic negative-bias temperature instability (NBTI) is presented. Using this methodology, we show that production quality transistors exhibit only minimal degradation after a brief stress at moderate to high dielectric fields (contrary to the excessive degradation reported in the recent literature). The degradation at stress conditions which are consistent with many recent NBTI studies is shown to be dominated by high-field stress, instead of NBTI. The ability to extract transconductance from fast drain-current measurements helps to identify the existence of a latent electron trapping/detrapping component which provides further support of a degradation mechanism dominated by high-field stress. This high-field-stress component, while dominating, has not been accounted for in most of the recent NBTI literature. View full abstract»

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  • 2011 IEEE international reliability physics symposium(IRPS)

    Page(s): 492
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  • 2011 IEEE EDS masters student fellowship

    Page(s): 493
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  • 18th International symposium on the physical and failure analysis of integrated circuit

    Page(s): 494
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  • Materials processing and reliability of 3D interconnects

    Page(s): 495 - 496
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  • 2010 Index IEEE Transactions on Device and Materials Reliability Vol. 10

    Page(s): 497 - 508
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  • IEEE Transactions on Device and Materials Reliability information for authors

    Page(s): C3
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  • Blank page [back cover]

    Page(s): C4
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Aims & Scope

IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Anthony S. Oates
Taiwan Semiconductor Mfg Co.