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Device and Materials Reliability, IEEE Transactions on

Issue 4 • Date Dec. 2010

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  • [Front cover]

    Publication Year: 2010 , Page(s): C1
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  • IEEE Transactions on Device and Materials Reliability publication information

    Publication Year: 2010 , Page(s): C2
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  • Table of contents

    Publication Year: 2010 , Page(s): 413
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  • Editorial Kudos to Our Reviewers

    Publication Year: 2010 , Page(s): 414
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  • Confidentiality of the review process

    Publication Year: 2010 , Page(s): 415
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  • What is in a page charge?

    Publication Year: 2010 , Page(s): 416
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  • Introduction to the Extreme Environment Technology and Reliability Special Issue

    Publication Year: 2010 , Page(s): 417
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  • Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

    Publication Year: 2010 , Page(s): 418 - 426
    Cited by:  Papers (23)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1067 KB) |  | HTML iconHTML  

    The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for applications where high temperature is required. The metal-oxide-semiconductor (MOS)-controlled power devices are the most favorable structure; however, it is widely believed that silicon oxide on SiC is physically limited, particularly at high temperatures. Therefore, experimental measurements of long-term reliab... View full abstract»

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  • Testing the Temperature Limits of GaN-Based HEMT Devices

    Publication Year: 2010 , Page(s): 427 - 436
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (910 KB) |  | HTML iconHTML  

    The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500°C, InAlN/GaN HEMTs have been operated up to 900°C for 50 h (in vacuum). Failure is thought t... View full abstract»

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  • Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics

    Publication Year: 2010 , Page(s): 437 - 448
    Cited by:  Papers (13)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1756 KB) |  | HTML iconHTML  

    “Extreme environment” electronics represent an important niche market in the trillion dollar global electronics industry and span the operation of electronic circuits and systems in surroundings lying outside the domain of conventional commercial or military specifications. Such extreme environments might include, for instance, the following: 1) operation down to very low temperature... View full abstract»

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  • Space Radiation Effects and Reliability Considerations for Micro- and Optoelectronic Devices

    Publication Year: 2010 , Page(s): 449 - 459
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (505 KB) |  | HTML iconHTML  

    The interplay between radiation effects and reliability is discussed for micro- and optoelectronic devices. Topics discussed include basic approaches such as burn-in and electrical screening that are used to improve component reliability, synergistic effects between reliability and radiation effects, the impact of microdose damage from heavy ions on reliability of high-density digital circuits, an... View full abstract»

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  • Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors

    Publication Year: 2010 , Page(s): 460 - 475
    Cited by:  Papers (10)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1247 KB) |  | HTML iconHTML  

    Thin-film transistors (TFTs) fabricated using amorphous oxide semiconductors (AOS) exhibit good electron mobility (5 to >; 50 cm2/V · s), they are transparent, and they can be processed at low temperatures. These new materials show a great promise for high-performance large-area electronics applications such as flexible electronics, transparent electronics, and analog current ... View full abstract»

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  • ESD Tolerance of GMR and TMR Heads Within Hard Disk Drives

    Publication Year: 2010 , Page(s): 476 - 481
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1039 KB) |  | HTML iconHTML  

    Electrostatic discharge (ESD) tolerance is discussed for giant magnetoresistive (GMR) and tunneling magnetoresistive (TMR) heads within hard disk drives (HDDs). There are two kinds of testing methods for ESD: the component ESD method with Human Body Model or Machine Model and the IEC61000-4-2 testing method. The IEC61000-4-2 testing method for GMR and TMR heads within head gimbal assembly (HGA), h... View full abstract»

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  • The Role of High-Field Stress in the Negative-Bias Temperature Instability

    Publication Year: 2010 , Page(s): 482 - 491
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (790 KB) |  | HTML iconHTML  

    In this paper, a fast drain-current measurement methodology which supports the standard threshold voltage and transconductance extractions associated with the fast dynamic negative-bias temperature instability (NBTI) is presented. Using this methodology, we show that production quality transistors exhibit only minimal degradation after a brief stress at moderate to high dielectric fields (contrary... View full abstract»

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  • 2011 IEEE international reliability physics symposium(IRPS)

    Publication Year: 2010 , Page(s): 492
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  • 2011 IEEE EDS masters student fellowship

    Publication Year: 2010 , Page(s): 493
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  • 18th International symposium on the physical and failure analysis of integrated circuit

    Publication Year: 2010 , Page(s): 494
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  • Materials processing and reliability of 3D interconnects

    Publication Year: 2010 , Page(s): 495 - 496
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  • 2010 Index IEEE Transactions on Device and Materials Reliability Vol. 10

    Publication Year: 2010 , Page(s): 497 - 508
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  • IEEE Transactions on Device and Materials Reliability information for authors

    Publication Year: 2010 , Page(s): C3
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  • Blank page [back cover]

    Publication Year: 2010 , Page(s): C4
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Aims & Scope

IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Anthony S. Oates
Taiwan Semiconductor Mfg Co.