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IEE Proceedings G - Circuits, Devices and Systems

Issue 1 • Date Feb. 1990

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Displaying Results 1 - 12 of 12
  • CMOS ternary logic circuits

    Publication Year: 1990, Page(s):21 - 27
    Cited by:  Papers (20)  |  Patents (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (539 KB)

    The authors review the main difficulties and advantages in developing CMOS ternary circuits. In addition to employing multiple power sources and multiple thresholds, he describes a new theory of transmission functions for designing CMOS ternary logic circuits. It can explain the main CMOS ternary circuits proposed previously. Computer simulations show that the circuits based on the transmission-fu... View full abstract»

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  • Algorithm for reducing circuit equations in computer applications

    Publication Year: 1990, Page(s):16 - 20
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (412 KB)

    The problem of computer formulation of circuit equations using the modified nodal analysis, especially in microcomputers, is addressed. The modified nodal formulation gives rise to a disproportionately large number of circuit equations even for small-size networks. An algorithm is presented to reduce the circuit equations to a very small number before solving them repeatedly, as in the case of obt... View full abstract»

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  • Wien bridge oscillator with reduced amplifier gain-bandwidth product dependence

    Publication Year: 1990, Page(s):13 - 15
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (169 KB)

    It is shown that the performance of an RC-active oscillator proposed by Reddy (1976) is sensitive to loop-gain errors and that designs based on minimising excess phase shifts are less than optimum. A modified design which reduces the frequency sensitivity to uniform gain-bandwidth product variations to near zero is presented, together with analytical support and experimental details.<> View full abstract»

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  • Strategy for DC parameter extraction in bipolar transistors

    Publication Year: 1990, Page(s):5 - 11
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (462 KB)

    An improved DC parameter-extraction methodology for bipolar transistors is presented. The method uses a new step-by-step strategy based on measurements made under two saturation conditions only: zero voltage and zero current. This method minimises the self-heating effects without using pulsed techniques, and it is suitable for medium-power devices. Special emphasis has been placed on the determina... View full abstract»

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  • General version of reconfiguration N modular redundancy system

    Publication Year: 1990, Page(s):1 - 4
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (263 KB)

    For some applications, such as aircraft control, military communications etc., these should have a larger mean time to failure (MTTF). This is why N-modular redundancy (NMR) is used instead of triple modular redundancy to increase the MTTF. However, the reliability of the fault-tolerance system decreases as the faulty modules increase. The reconfiguration 5MR can improve this problem. It can toler... View full abstract»

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  • Area-optimised registers using a folded PLA

    Publication Year: 1990, Page(s):28 - 32
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (312 KB)

    A method for implementing flip-flops using a folded PLA in a feedback connection is proposed. The new approach is shown to give effective circuits in terms of silicon area.<> View full abstract»

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  • pMOS transistors, intrinsic mobility and their surface degradation parameters at cryogenic temperatures

    Publication Year: 1990, Page(s):33 - 36
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (275 KB)

    The intrinsic low-field mobility mu /sub 0/ and the mobility surface-degradation constants theta /sub 0/ and theta /sub B/ in varying channel length pMOS transistors at cryogenic temperatures are presented. It was found the mu /sub 0/ increased from 180 cm/sup 2//V s at 300 K to 1260 cm/sup 2//V at 77 K, and that theta /sub 0/ also increased with 0.10 at 300 K to 0.49 at 77 K. These two parameters... View full abstract»

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  • Multistable states MIS transistor

    Publication Year: 1990, Page(s):37 - 43
    Cited by:  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (537 KB)

    Mathematical simulation and experimental studies of an MINpn (MISSS) metal-insulator-semiconductor bipolar transistor are described. Such devices generally have switching characteristics. The high-impedance state is associated with a reverse-biased p-n junction which sustains high voltages. The breakover occurs when the sum of the small-signal current gains reaches unity. The low-impedance state i... View full abstract»

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  • Precision RC-active frequency compensated phase shifters

    Publication Year: 1990, Page(s):44 - 48
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (277 KB)

    Precision phase shifters for processing sinusoidal signals are described. The proposed circuits are capable of extremely low phase errors and in the case of a 120 degrees design could, for example, maintain a phase constancy of +or-0.015 degrees in the face of variations in frequency of +or-5% about the central design value. The effects of limited amplifier bandwidth on the phase responses are exa... View full abstract»

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  • Formulation of generalised state equations and multiport equations: a novel approach

    Publication Year: 1990, Page(s):49 - 52
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (236 KB)

    The reduced modified nodal approach (RMNA) and reduced nodal approach with nullors (RNAN) are used to formulate generalised state equations and multiport hybrid equations for linear and nonlinear network analysis. This approach can be used to improve generalised programs, such as SPICE and ECAP.<> View full abstract»

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  • Investigation of multilayer metallisation in a gate array device using cross-sectional transmission electron microscopy

    Publication Year: 1990, Page(s):53 - 56
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (536 KB)

    Cross-sectional transmission electron microscopy (XTEM) was used to investigate structures of a multilayer of an integrated circuit. Microstructures of thin films, interfaces, interconnections, step coverage and dislocations in the device were revealed. Good step coverage was observed when polyimide was used as an insulator between two metal lasers. The results indicate that, with a proper techniq... View full abstract»

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  • Low-voltage BIMOS AM front-end amplifier

    Publication Year: 1990, Page(s):57 - 60
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (269 KB)

    A BIMOS AM front-end amplifier mixer is discussed. The advantages of BIMOS technology in the realisation of front-end amplifiers is demonstrated. Because of the low-voltage power supply, bipolar transistors are required for the mixer structure. It is shown that for low-noise applications an MOS input structure results in a better performance. The stability problem of a bipolar and MOS input struct... View full abstract»

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