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# IEEE Transactions on Nuclear Science

## Issue 6  Part 1 • Dec. 2010

This issue contains several parts.Go to:  Part 2

## Filter Results

Displaying Results 1 - 25 of 103
• ### [Front cover]

Publication Year: 2010, Page(s): C1
| PDF (61 KB)
• ### IEEE Transactions on Nuclear Science publication information

Publication Year: 2010, Page(s): C2
| PDF (39 KB)

Publication Year: 2010, Page(s):2997 - 3001
| PDF (101 KB)
• ### Editorial Conference Comments by the General Chairman

Publication Year: 2010, Page(s):3002 - 3004
| PDF (45 KB) | HTML
• ### 2010 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Editors

Publication Year: 2010, Page(s): 3005
| PDF (23 KB) | HTML
• ### 2010 December Special NSREC Issue of the IEEE Transactions on Nuclear Science List of Reviewers

Publication Year: 2010, Page(s):3006 - 3007
| PDF (22 KB)
• ### 2010 IEEE Nuclear and Space Radiation Effects Conference Awards Comments by the Chairman

Publication Year: 2010, Page(s):3008 - 3009
| PDF (32 KB) | HTML
• ### Outstanding Conference Paper Award 2010 IEEE Nuclear and Space Radiation Effects Conference

Publication Year: 2010, Page(s):3010 - 3013
| PDF (715 KB)
• ### In memoriam: Gordon Robert Hopkinson (July 4, 1952 - September 12, 2010)

Publication Year: 2010, Page(s):3014 - 3015
| PDF (215 KB) | HTML
• ### Present and Future Non-Volatile Memories for Space

Publication Year: 2010, Page(s):3016 - 3039
Cited by:  Papers (54)
| | PDF (1599 KB) | HTML

We discuss non-volatile memories (NVM) for space applications. The focus will be both on technologies and devices aimed at the mainstream commercial markets and on rad-hard devices. Commercial NVMs are very attractive for space designers due to their large size (tens of Gbits), even though they have several issues related to ionizing radiation. Rad-hard NVMs offer radiation hardness, but are avail... View full abstract»

• ### Radiation Effects in Single-Walled Carbon Nanotube Thin-Film-Transistors

Publication Year: 2010, Page(s):3040 - 3045
Cited by:  Papers (12)
| | PDF (548 KB) | HTML

The fabrication, characterization, and radiation response of single-walled carbon nanotube (SWCNT) thin-film field effect transistors (SWCNT-TFTs) has been performed. SWCNT-TFTs were fabricated on SiO2-Si substrates from 98% pure semiconducting SWCNTs separated by density gradient ultracentrifugation. Optical and Raman characterization, in concert with measured drain current I... View full abstract»

• ### Defect Interactions of ${hbox{H}}_{2}$ in ${hbox{SiO}}_{2}$: Implications for ELDRS and Latent Interface Trap Buildup

Publication Year: 2010, Page(s):3046 - 3053
Cited by:  Papers (6)
| | PDF (864 KB) | HTML

The energetics of the interactions between molecular hydrogen and common defects in SiO2 that are typically associated with O deficiency have been obtained using atomic-scale quantum mechanical calculations. H2 does not easily crack at neutral vacancies, but it will crack efficiently at O vacancy sites that have captured a hole and relaxed into the puckered configuration of a... View full abstract»

• ### Total Dose Effects on the Performance of Irradiated Capacitorless MSDRAM Cells

Publication Year: 2010, Page(s):3054 - 3059
Cited by:  Papers (4)
| | PDF (396 KB) | HTML

The impact of total ionizing dose (TID) is reported on irradiated capacitorless metastable dip RAM (MSDRAM) cells, built in a planar SOI technology. The memory window shifts toward more negative voltages at higher doses. The unconventional gate current peak measured in MSDRAM cells decreases with dose and disappears at 500 krad(SiO2) for these devices. The retention time of the 0-state ... View full abstract»

• ### Process Dependence of Proton-Induced Degradation in GaN HEMTs

Publication Year: 2010, Page(s):3060 - 3065
Cited by:  Papers (26)
| | PDF (825 KB) | HTML

The 1.8-MeV proton radiation responses are compared for AlGaN/GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. The NH3-rich devices are more susceptible to proton irradiation than the Ga-rich and N-rich devices. The 1/ f noise of the devices increases with increasing fluence. Density functional theory calculations show that N vacancies and Ga-N divacanci... View full abstract»

• ### Effects of Processing and Radiation Bias on Leakage Currents in Ge pMOSFETs

Publication Year: 2010, Page(s):3066 - 3070
Cited by:  Papers (6)
| | PDF (525 KB) | HTML

The irradiation and annealing responses of Ge pMOSFETs are investigated as a function of device processing. Transmission gate bias is found to be the worst-case irradiation bias condition. Junction leakage increases with total dose, which leads to a decrease in the Ion/Ioff ratio. The Ion/Ioff ratio recovers with room temperature annealing. Both band-to-... View full abstract»

• ### Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation

Publication Year: 2010, Page(s):3071 - 3077
Cited by:  Papers (7)
| | PDF (378 KB) | HTML

Experimental data provide insight into the mechanisms governing the impact of gate and lateral isolation dielectrics and of scaling-related technological advances on noise and its sensitivity to total ionizing dose effects in Low Power 65 nm CMOS devices. The behavior of the 1/f noise term is correlated with the effects on the drain current that irradiation brings along by turning on lateral paras... View full abstract»

• ### Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16–300 K

Publication Year: 2010, Page(s):3078 - 3086
Cited by:  Papers (2)
| | PDF (877 KB) | HTML

Heavy ion-induced single event latchup (SEL) is characterized in a commercially available CMOS readout integrated circuit operating at cryogenic temperatures. SEL observed at 24 K and below is believed to be possible when free carriers produced by an ion strike initiate an exponential increase in the free carrier density via shallow-level impact ionization (SLII). This results in a large current i... View full abstract»

• ### Analysis of Total Dose-Induced Dark Current in CMOS Image Sensors From Interface State and Trapped Charge Density Measurements

Publication Year: 2010, Page(s):3087 - 3094
Cited by:  Papers (20)
| | PDF (1212 KB) | HTML

The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements. Two types of photodiode and several thick-oxide-FETs were manufactured using a 0.18-μm CMOS image sensor process and exposed to 10-keV X-ray from 3 krad to 1 Mrad. It is shown that the radiatio... View full abstract»

• ### Application of CL/EBIC-SEM Techniques for Characterization of Radiation Effects in Multijunction Solar Cells

Publication Year: 2010, Page(s):3095 - 3100
Cited by:  Papers (6)
| | PDF (935 KB) | HTML

We report the results of the characterization of irradiated InGaP2/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of irradiation damage on the optoelectronic properties of each subcell in the monolithi... View full abstract»

• ### Displacement Damage Effects Due to Neutron and Proton Irradiations on CMOS Image Sensors Manufactured in Deep Submicron Technology

Publication Year: 2010, Page(s):3101 - 3108
Cited by:  Papers (11)
| | PDF (662 KB) | HTML

Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated to imaging are presented through the analysis of the dark current behavior in pixel arrays and isolated photodiodes. The mean dark current increase and the dark current nonuniformity are investigated. Dark current histogram observations are compared to damage energy distributions based on GEANT 4 cal... View full abstract»

• ### Origin of Radiation Induced Damage in Organic P3HT:PCBM Based Photocells

Publication Year: 2010, Page(s):3109 - 3113
Cited by:  Papers (1)
| | PDF (183 KB) | HTML

Organic semiconductor photocells based upon P3HT:PCBM (1:1 by weight) have been subjected to X irradiation. The carrier lifetime has been determined using a pulsed optical method with continuous light to generate an open circuit voltage bias. No effect is observed on the carrier lifetime up to 300 krad (SiO2). However, changes in the open circuit voltage are observed and we argue that t... View full abstract»

• ### First Record of Single-Event Upset on Ground, Cray-1 Computer at Los Alamos in 1976

Publication Year: 2010, Page(s):3114 - 3120
Cited by:  Papers (5)
| | PDF (1299 KB) | HTML

Records of bit flips in the Cray-1 computer installed at Los Alamos, NM, in 1976 lead to an upset rate in the Cray-1's bipolar SRAMs that correlates with the single-event upsets (SEUs) being induced by the atmospheric neutrons. View full abstract»

• ### Monte Carlo Simulations to Evaluate the Contribution of Si Bulk, Interconnects, and Packaging to Alpha-Soft Error Rates in Advanced Technologies

Publication Year: 2010, Page(s):3121 - 3126
Cited by:  Papers (15)
| | PDF (436 KB) | HTML

At ground level, alpha particles are a major source of soft errors. They may result from radioactive isotopes found in electronic device materials. In this paper, the materials' contributions to alpha particle-induced Soft Error Rate (SER) and MCU are evaluated for a 65 nm CMOS technology. The trend of SER on 45 and 32 nm is also reported in this paper. These evaluations are performed by Monte Car... View full abstract»

• ### Impact of the Solar Flares on the SER Dynamics on Micro and Nanometric Technologies

Publication Year: 2010, Page(s):3127 - 3134
Cited by:  Papers (9)
| | PDF (1227 KB) | HTML

The objective of this paper is to study the impact of the solar flares on the single event rate (SER) dynamics investigating the influence of shielding, the technological integration level and the contribution of the direct ionization of protons for a 65 nm technology. This paper proposes a comparison of MUSCA SEP3 calculations and SAC-C satellite in-flight data in terms of SEU “... View full abstract»

• ### The Trapped Proton Environment in Medium Earth Orbit (MEO)

Publication Year: 2010, Page(s):3135 - 3142
Cited by:  Papers (3)
| | PDF (1261 KB) | HTML

Energetic proton flux maps of the differential flux intensity in the medium-Earth orbit (MEO) regime (altitudes ~ 7000-15,000 km) are developed from measurements taken by detectors aboard the Combined Release and Radiation Effects Satellite (CRRES), HEO-F1, HEO-F3 and ICO satellites. Measurement errors have been estimated by cross-calibrating to a standard sensor aboard the GOES satellite during s... View full abstract»

## Aims & Scope

IEEE Transactions on Nuclear Science focuses on all aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

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## Meet Our Editors

Editor-in-Chief
Paul Dressendorfer
11509 Paseo del Oso NE
Albuquerque, NM  87111  USA