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Microwave and Wireless Components Letters, IEEE

Issue 11 • Date Nov. 2010

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Displaying Results 1 - 23 of 23
  • Table of contents

    Publication Year: 2010 , Page(s): C1 - C4
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  • IEEE Microwave and Wireless Components Letters publication information

    Publication Year: 2010 , Page(s): C2
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  • Mur Absorbing Boundary Condition for Three-Step 3-D LOD-FDTD Method

    Publication Year: 2010 , Page(s): 589 - 591
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (258 KB) |  | HTML iconHTML  

    A consistent implementation of Mur first-order absorbing boundary condition (ABC) for three-step 3-D locally 1-D finite-difference time- domain (LOD-FDTD) method is presented. Numerical examples are included to validate the proposed scheme in comparison with Mur ABC for the standard FDTD and two other Mur ABC schemes for the LOD-FDTD. The numerical results illustrate that the proposed scheme can achieve good wave-absorbing capability. View full abstract»

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  • Submillimeter-Wave 90 ^{\circ} Polarization Twists for Integrated Waveguide Circuits

    Publication Year: 2010 , Page(s): 592 - 594
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (716 KB) |  | HTML iconHTML  

    We present a novel full-waveguide-band 90° polarization twist implemented in full-height rectangular waveguide suitable for use in submillimeter-wave and terahertz-integrated waveguide circuits. Combined benefits of simplified fabrication, suitability for silicon micromachining, suitability for integration with other components into integrated waveguide circuits without interconnecting flanges, and alleviation of waveguide associated losses and mismatches, make this component well-suited for submillimeter-wave applications. A polarization twist fabricated for WR-3 waveguide with UG-387/UM flanges was tested to confirm insertion loss better than 0.5 dB and return loss better than 20 dB from 220 to 320 GHz. We also fabricated and tested a polarization twist scaled to the 500-700 GHz band. By using only a single constant-depth channel in addition to the E-plane and H-plane split waveguide channels, this component is well optimized for fabrication with silicon micromachining, making it scalable to at least 5 THz. View full abstract»

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  • A Compact Design of High-Power Spurious-Free Low-Pass Waveguide Filter

    Publication Year: 2010 , Page(s): 595 - 597
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (376 KB) |  | HTML iconHTML  

    In this letter, a new technique is proposed for the design of a compact high-power low-pass rectangular waveguide filter with a wide spurious-free frequency behavior. Specifically, the new filter is intended for the suppression of the fundamental mode over a wide band in much higher power applications than the classical corrugated filter with the same frequency specifications. Moreover, the filter length is dramatically reduced when compared to alternative techniques previously considered. View full abstract»

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  • Helical Resonator Filters With Improved Power Handling Capabilities for Space Applications

    Publication Year: 2010 , Page(s): 598 - 600
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (341 KB) |  | HTML iconHTML  

    The power-handling capabilities of helical resonator filters for space applications are discussed. Emerging difficulties due to the multipaction effects are highlighted. A method is proposed to increase specified power handling without significantly sacrificing the size/quality factor. Experimental verification is attained by means of a fabricated prototype for which measured filter response and multipaction test results are obtained and presented. View full abstract»

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  • Compact Elliptic-Function Coplanar Waveguide Low-Pass Filters Using Backside Metallic Patterns

    Publication Year: 2010 , Page(s): 601 - 603
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (239 KB) |  | HTML iconHTML  

    In this letter, compact elliptic-function low-pass filters (LPF) implemented in coplanar waveguide technology by etching stepped impedance resonators (SIR) in the back substrate side, are presented. The required transmission zeros of the elliptic-function response are provided by the shunt connected SIRs. As an illustrative example, an order-3 prototype LPF with 1 GHz cutoff frequency is designed and fabricated. The measured stop-band rejection is better than 30 dB up to 6.4 GHz, and a narrow transition band is obtained. To demonstrate the possibilities of the approach to synthesize arbitrary elliptic-function responses and order, a fifth-order elliptic LPF with 1 GHz cut-off frequency is also designed and fabricated. Filter dimensions are as small as 6.6 mm × 9.2 mm, i.e, 0.034λ × 0.047A, for the third-order filter, and 12.1 mm × 13 mm (0.062λ × 0.067λ) for the fifth-order filter, λ being the guided wavelength at cutoff. View full abstract»

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  • Design of Wide-Band Pseudo-Elliptic Waveguide Filters With Cavity-Backed Inverters

    Publication Year: 2010 , Page(s): 604 - 606
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (288 KB) |  | HTML iconHTML  

    This letter presents a method for the design of wide-band pseudo-elliptic waveguide filters without resorting to global full-wave optimization. In this approach, we introduce and employ two novel cavity-backed inverters, which produce transmission zeros in the out-of-band response, however, whose frequency response in the passband is similar to that of normal iris inverters. As a design example, a pseudo-elliptic waveguide filter with transmission zeros in the lower and upper frequency bands are designed and fabricated. The results show good equal-ripple performance in the passband and improved rejection performance with preset transmission zeros beyond the passband. View full abstract»

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  • Compact Wideband Microstrip Bandpass Filter Using Quasi-Spiral Loaded Multiple-Mode Resonator

    Publication Year: 2010 , Page(s): 607 - 609
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (538 KB) |  | HTML iconHTML  

    In this letter, a new model for further reducing the size and increasing the bandwidth (BW) of a class of bandpass filter (BPF) utilizing multi-mode resonator is presented. A new technique based on spiral transmission line loading to achieve higher BW and further size reduction is analyzed for this class of BPF. A compact ultra wideband microstrip BPF is proposed by using this technique. The capability of tuning the transmission zeroes in the proposed model is also studied. Estimates for the frequencies of these transmission zeroes are directly presented. The overall BW of the proposed BPF is shown to be increased more than 12.6% and its size to be reduced more than 70% compared with the conventional ones. The proposed BPF provides a relatively wide 3 dB fractional bandwidth of 72.6% frequency response with two transmission zeros at the lower and upper stop-bands to provide a very sharp cutoff and low passband insertion-loss and good return-loss characteristics. View full abstract»

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  • Novel Dual-Band Microwave Filter Using Dual-Capacitively-Loaded Cavity Resonators

    Publication Year: 2010 , Page(s): 610 - 612
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (561 KB) |  | HTML iconHTML  

    We present a novel design concept for low-loss dual-band cavity filters based on dual-capacitively-loaded (DCL) cavity resonators. The relatively independent control over the center frequencies, inter-resonator and external coupling coefficients makes the DCL resonator an ideal building block for dual-band filters with widely separated passbands. The high unloaded quality factor (Qu) of the DCL cavity resonator ensures a low insertion loss. An example 2-pole dual-band filter at 2.4 and 5.0 GHz is demonstrated with an insertion loss of 1.47 dB at 2.4 GHz, 1.01 dB at 5.0 GHz and a bandwidth of 24.8 MHz (~1%) at 2.4 , and 51.2 MHz (~1%) at 5.0 GHz. View full abstract»

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  • Dual-Mode Dual-Band Bandpass Filter Using Balun Structure for Single Substrate Configuration

    Publication Year: 2010 , Page(s): 613 - 615
    Cited by:  Papers (11)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (361 KB) |  | HTML iconHTML  

    A novel dual-mode dual-band bandpass filter (BPF) for a single substrate configuration is proposed that uses a balun structure. The outer and inner loop resonators are simultaneously excited by the microstrip line and slotline balun structure. In spite of the microstrip feed network, the proposed dual-mode BPF can achieve dual-band operation. Two proper degenerate modes in the lower and upper passbands can be generated and controlled by installing an inductive cut and a capacitive patch in the corner of two loops, respectively. This letter deals with the analysis and design of the proposed dual-band BPF as well as the experimental validation of the predicted dual-band performance. View full abstract»

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  • Dual-Band Bandpass Filter With Controllable Bandwidths Using Two Coupling Paths

    Publication Year: 2010 , Page(s): 616 - 618
    Cited by:  Papers (9)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (438 KB) |  | HTML iconHTML  

    This letter presents the designs of dual-band bandpass filters using two coupling paths to control the bandwidth of each passband. One coupling path only delivers signals at the upper passband frequency whereas the other one couple signals at both passbands. Utilizing this method, the two bandwidths can be adjusted. The filters make use of stub-loaded resonators and it is convenient to tune the passband frequencies. Therefore, both the frequency and bandwidth of each passband can be easily controlled. For demonstration purpose, two example filters are implemented with different bandwidths. The experimental results are presented to verify the proposed method. View full abstract»

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  • A High-Power and Highly Linear CMOS Switched Capacitor

    Publication Year: 2010 , Page(s): 619 - 621
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (521 KB) |  | HTML iconHTML  

    A new CMOS switched capacitor is developed to be used for high-power applications such as a power amplifier, where high voltage handling capability and low distortion are two major factors. In order to demonstrate superior performance of the proposed structure over a conventional structure, two designs are analyzed and compared while maintaining comparable small signal characteristics such as a 2:1 tuning ratio and a quality factor. The maximum applicable voltage swing of the proposed structure is improved over the conventional structure by a factor of VDD / Vth, or 12 dB in this design. The proposed structure also shows a greatly improved two-tone third-order inter-modulation distortion characteristic with a maximum 34 dB improvement. This proposed structure is a suitable component for tunable CMOS power amplifier applications. View full abstract»

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  • Noise Figure Formulas of RF MOSFETs in the Presence of Digital Substrate Noise

    Publication Year: 2010 , Page(s): 622 - 624
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (214 KB) |  | HTML iconHTML  

    Noise figure (NF) formulas are presented for RF MOSFETs in the presence of digital substrate noise. When the digital substrate noise is much higher than the intrinsic MOSFET noise, simplified NF formulas can be obtained. For the case of which the digital substrate noise is comparable to the MOSFET thermal noise in magnitude, general NF expressions of RF MOSFETs with digital substrate noise are derived. Comparisons of the derived NF formulas and the experimental results are done showing good agreement between them for RF MOSFETs with digital substrate noise. View full abstract»

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  • A 1.1 THz Gain-Bandwidth W -Band Amplifier in a 0.12 \mu {\rm m} Silicon Germanium BiCMOS Process

    Publication Year: 2010 , Page(s): 625 - 627
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (479 KB) |  | HTML iconHTML  

    A W-band, cascaded constructive wave amplifier realizes high gain and bandwidth in a 0.12 μm SiGe BiCMOS process. The amplifier achieves 37.5 dB gain at 90 GHz with a 3 dB bandwidth of 14.6 GHz. Consequently, this amplifier demonstrates a gain-bandwidth product as high as 1,095 GHz. At nominal bias condition, input and output return losses are better than 11 dB over the entire 3 dB bandwidth and the output-referred P1 dB is -5.5 dBm. The amplifier consumes 65 mW from a 1.8 V at a nominal bias condition and 130 mW from a 2 V at a high-gain bias condition. The chip occupies an area of 0.39 mm2 including the pads. View full abstract»

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  • A 60 GHz Wideband Phased-Array LNA With Short-Stub Passive Vector Generator

    Publication Year: 2010 , Page(s): 628 - 630
    Cited by:  Papers (8)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (651 KB) |  | HTML iconHTML  

    This letter presents 60 GHz 5 b phased-array low noise amplifier (LNA) implemented in 90 nm CMOS for a short range wireless application. The design consists of common source two-stage LNA, short-stub vector generator, I/Q modulator with 5 b digital to analog converter and differential to single amplifier. All the proposed amplifiers are designed using a transformer coupled method which results in wideband operation to meet the frequency requirement of the standard. The proposed circuit provides 360 phase controllability over 50-70 GHz band while achieving 12.5 dB gain, 6.55 dB NF and consuming 50 mA from 1.2 V. The measured rms phase error is in the phase accuracy limitation (differential phase array) and gain variation is quite low (<; 0.92 dB) over 5 b control range. View full abstract»

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  • A Low-Power, W -Band Phase Shifter in a 0.12 \mu{\rm m} SiGe BiCMOS Process

    Publication Year: 2010 , Page(s): 631 - 633
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (750 KB) |  | HTML iconHTML  

    This letter presents a loss-compensated, varactor-loaded transmission line for a W-band analog phase shifter in a 0.12 μm SiGe BiCMOS process. To compensate for distributed varactor losses, a variable gain amplifier is distributed along the transmission line. A phase shift of 65° over eight stages (8° per stage) is introduced from 70-110 GHz. A maximum gain of 16.7 dB or (2.1 dB per stage) at 94 GHz is measured. The output-referred P1 dB is typically -7 dBm with a total current consumption of 20 mA from a 1.8 V supply voltage. The chip occupies an area of 0.2 mm2 including the pads. This is the first phase shifter at 94 GHz in silicon/silicon-germanium reported to date. View full abstract»

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  • Ultra-Low-Power Series-Feedback Frequency Divider Using 0.15- \mu{\rm m} GaAs pHEMT's at W-Band

    Publication Year: 2010 , Page(s): 634 - 636
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (234 KB) |  | HTML iconHTML  

    A frequency divider with a very low dc power consumption of 3 mW is demonstrated using 0.15 μm GaAs pHEMT technology at W-band. The frequency divider is based on an injection lock topology using a cascode field effect transistor (FET) structure. For low-power operation, the oscillator is configured in series-feedback topology using the upper FET as a gain cell and the lower FET as a capacitive feedback element. An impedance-transforming transmission line is inserted between the two FET's to further reduce the dc power consumption. Besides, the locking range is enhanced by adding varactor tuning at the gate of the upper FET. When the input power of 0 dBm is applied, the frequency divider operates at 77 GHz with an output power of -20 dBm in a bandwidth of 4.2 GHz (5.5%) while consuming only 3 mW from 1V power supply. Overall bandwidth with varactor tuning is from 68.4 to 82.0 GHz (13.6 GHz, 18.1%). To our knowledge, the measured power consumption of the presented frequency divider is among the lowest from the reported W-band frequency dividers. View full abstract»

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  • A 29 dBm 70.7% PAE Injection-Locked CMOS Power Amplifier for PWM Digitized Polar Transmitter

    Publication Year: 2010 , Page(s): 637 - 639
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (426 KB) |  | HTML iconHTML  

    This letter presents an injection-locked CMOS power amplifier for pulse width modulation (PWM) digitized polar transmitter. A power oscillator combined with injection-locking technique reduces the required driving power and provide high drain efficiency in the power stage. The switched power oscillator is proposed for PWM digitized polar transmitter. To achieve differential to single output and impedance transformation, a lumped element balun, employing a minimum number of discrete components, is used. The power amplifier achieved a power-added efficiency of 70.7% at a maximum output power of 29.05 dBm. The measured drain efficiency in the power stage was 72.7% at 820 MHz. The chip is implemented with a 0.18 μm CMOS process. The total chip size is 0.48 mm2. View full abstract»

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  • Design of Low-Cost Chipless System Using Printable Chipless Tag With Electromagnetic Code

    Publication Year: 2010 , Page(s): 640 - 642
    Cited by:  Papers (21)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (762 KB) |  | HTML iconHTML  

    In this letter, a printable chipless tag with electromagnetic code using split ring resonators is proposed. A 4 b chipless tag that can be applied to paper/plastic-based items such as ID cards, tickets, banknotes and security documents is designed. The chipless tag generates distinct electromagnetic characteristics by various combinations of a split ring resonator. Furthermore, a reader system is proposed to digitize electromagnetic characteristics and convert chipless tag to electromagnetic code. View full abstract»

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  • Advertisement - IEEE Foundation

    Publication Year: 2010 , Page(s): 643
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  • Advertisement - Leading the field since 1884

    Publication Year: 2010 , Page(s): 644
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  • IEEE Microwave and Wireless Components Letters Reviewers List

    Publication Year: 2010 , Page(s): C3
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Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

Full Aims & Scope