Electron Devices, IEEE Transactions on
Issue 6 • Date June 1993
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Displaying Results 1 - 25 of 28
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Comment on "The nonlinear operation of a microwave crossed-field amplifier" by G.E. Thomas
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PDF (250 KB)
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Comments, with reply, on "A scanning electron- or light-beam-induced current method for determination of grain boundary recombination velocity in polycrystalline semiconductors" by C.A. Dimitriadis
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PDF (186 KB)
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Optical and electrical oscillations in double-heterojunction negative differential resistance devices
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PDF (708 KB)
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Bandgap narrowing and emitter efficiency in heavily doped emitter structures revisited
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PDF (696 KB)
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A transconductance spectroscopy approach to device level surface state characterization
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PDF (240 KB)
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Numerical simulation of the current-voltage characteristics of heteroepitaxial Schottky-barrier diodes
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PDF (684 KB)
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Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5-μm BiCMOS technology for fast 4-Mb SRAM's
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PDF (800 KB)
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Noise properties of AlGaAs/GaAs MODFET's
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PDF (244 KB)
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On the systematic analytical solutions for minority-carrier transport in nonuniform doped semiconductors: application to solar cells
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PDF (248 KB)
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1/
f noise in n-p-n GaAs/AlGaAs heterojunction bipolar transistors:iImpact of intrinsic transistor and parasitic series resistances |
PDF (460 KB)
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Studies of high-speed metal-semiconductor-metal photodetector with a GaAs/AlGaAs/GaAs heterostructure
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PDF (552 KB)
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Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes
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PDF (708 KB)
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Tunneling and thermal emission of electrons from a distribution of deep traps in SiO2 [nMOSFET]
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PDF (328 KB)
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Short-channel effects and drain-induced barrier lowering in nanometer-scale GaAs MESFET's
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PDF (508 KB)
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Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's
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PDF (272 KB)
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Electrical and optical properties of the four-terminal double-heterostructure opto-electronic switch
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PDF (688 KB)
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Infrared photoconductivity via deep copper acceptors in silicon-doped, copper-compensated gallium arsenide photoconductive switches
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PDF (524 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
