# IEEE Transactions on Microwave Theory and Techniques

## Filter Results

Displaying Results 1 - 25 of 31

Publication Year: 2010, Page(s):C1 - C4
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• ### IEEE Transactions on Microwave Theory and Techniques publication information

Publication Year: 2010, Page(s): C2
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• ### Editorial: Message From the Outgoing Editors

Publication Year: 2010, Page(s):2317 - 2318
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• ### Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs

Publication Year: 2010, Page(s):2319 - 2325
Cited by:  Papers (1)
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In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies (ft and fmax) tend to increase with temperature. In addition, the inherent body-related parasitics and the series resis... View full abstract»

• ### A Direct-Conversion CMOS RF Receiver Reconfigurable From 2 to 6 GHz

Publication Year: 2010, Page(s):2326 - 2333
Cited by:  Papers (12)  |  Patents (3)
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A CMOS direct-conversion receiver with only one signal path is reconfigurable from 2 to 6 GHz in the RF band and from 3.6 to 54 MHz in the channel bandwidth. By employing a voltage feedback in a common-gate low-noise amplifier (LNA), the input matching of the LNA can be reconfigured for each RF band by simply changing the resonant frequency of the load network. The frequency characteristics of the... View full abstract»

• ### A 20-Gs/s Track-and-Hold Amplifier in InP HBT Technology

Publication Year: 2010, Page(s):2334 - 2339
Cited by:  Papers (19)
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This paper presents a 20-Gs/s track-and-hold amplifier (THA) fabricated InP HBT technology. This THA is capable of operating under relatively high input voltages. The THA uses a fully differential architecture with a switched emitter-follower. To mitigate the pedestal error due to the feedthrough attenuation network, we added degeneration resistors in the feedthrough attenuation block. Measured to... View full abstract»

• ### Wideband Common-Gate CMOS LNA Employing Dual Negative Feedback With Simultaneous Noise, Gain, and Bandwidth Optimization

Publication Year: 2010, Page(s):2340 - 2351
Cited by:  Papers (48)
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This paper presents a wideband common-gate (CG) LNA architecture that overcomes the fundamental tradeoff between power and noise match without compromising its stability. The proposed architecture can achieve the minimum noise figure (NF) over the previously reported feedback amplifiers in a CG configuration. The proposed architecture achieves broadband impedance matching, low noise, large gain, e... View full abstract»

• ### Microwave Power Limiting Devices Based on the Semiconductor–Metal Transition in Vanadium–Dioxide Thin Films

Publication Year: 2010, Page(s):2352 - 2361
Cited by:  Papers (25)  |  Patents (1)
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We present a novel concept of microwave (MW) power-limiting devices based on reversible semiconductor-to-metal transition (SMT) of vanadium-dioxide thin films integrated on coplanar waveguides. We designed, simulated, and fabricated devices, which can be reversibly driven from a low-loss (<; 0.7 dB) transmission state into an attenuating state (> 20 dB) as the VO2 material is chan... View full abstract»

• ### Digitally Driven Antenna for HF Transmission

Publication Year: 2010, Page(s):2362 - 2367
Cited by:  Papers (4)
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An electrically small antenna connected directly to a complementary pair of switching transistors is driven with a pulsewidth modulated HF signal, eliminating the requirement for a frequency-dependent impedance-matching network. The intrinsic reactance of the transmit and receive antennas acts as a filter to recover the HF signal from the digital pulse train. This is defined here as the digitally ... View full abstract»

• ### A Technique for Implementing Wide Dynamic-Range Polar Transmitters

Publication Year: 2010, Page(s):2368 - 2374
Cited by:  Papers (9)
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This paper presents a technique for implementing wide dynamic-range polar transmitters based on the envelope elimination and restoration technique. The fast-varying instantaneous output power level is controlled by a switch that modulates the input signal of the power amplifier (PA), whereas the slow-varying average power level is controlled by changing the dc voltage of the drain of the PA. A cel... View full abstract»

• ### An Efficient Bilateral Dual-Grid-FDTD Approach Applied to On-Body Transmission Analysis and Specific Absorption Rate Computation

Publication Year: 2010, Page(s):2375 - 2382
Cited by:  Papers (8)
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This paper presents a new simulation strategy based on the finite-difference time-domain (FDTD) method. This new approach aims at simulating efficiently a full-duplex link where both the transmitting and receiving antennas require a precise description, while their environment does not imply a particularly fine mesh. Typical application fields of the bilateral dual-grid-FDTD are the analysis of tr... View full abstract»

• ### Generalized Miniaturization Method for Coupled-Line Bandpass Filters by Reactive Loading

Publication Year: 2010, Page(s):2383 - 2391
Cited by:  Papers (18)
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This paper presents a generalized miniaturization method for coupled-line bandpass filters by reactive loading, including the series-inductive loading method that is proposed in this work. It is shown that bandwidth reduction seen in the previous miniaturization method of shunt-capacitive loading is a special case. In fact, one can choose a coupled-line filter to be miniaturized with its bandwidth... View full abstract»

• ### Group-Delay Engineered Noncommensurate Transmission Line All-Pass Network for Analog Signal Processing

Publication Year: 2010, Page(s):2392 - 2407
Cited by:  Papers (78)
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A group-delay engineered noncommensurate transmission line two-port all-pass network for analog signal-processing applications is presented, analytically modeled, and experimentally demonstrated. This network consists of transversally cascaded C-sections, which are distributed implementations of the bridged-T equalizer lumped circuit. It is obtained by interconnecting the alternate ports of adjace... View full abstract»

• ### Flip-Chip-Based Multichip Module for Low Phase-Noise $V$-Band Frequency Generation

Publication Year: 2010, Page(s):2408 - 2419
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This paper reports on a flip-chip (FC)-based multichip module (MCM) for low phase-noise (PN) V-band frequency generation. A high-performance ×8 GaAs metamorphic high-electron mobility transistor monolithic microwave integrated circuit (MMIC) multiplier and a low PN 7-GHz GaAs InGaP heterojunction bipolar transistor (HBT) MMIC oscillator were used in the module. The microstrip MMICs were FC ... View full abstract»

• ### A Waveguide to Unenclosed Coplanar Waveguide Transition

Publication Year: 2010, Page(s):2420 - 2425
Cited by:  Papers (4)
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A transition from rectangular waveguide to unenclosed coplanar waveguide (CPW) is designed and tested at W -band. Full-wave finite-element analysis is applied to the design and optimization trends are shown for the critical parameters. A stepped-impedance filter suppresses a parasitic mode, which is generated as the circuit emerges from the waveguide block, and a rejection of -20 dB is achi... View full abstract»

• ### 65-, 45-, and 32-nm Aluminium and Copper Transmission-Line Model at Millimeter-Wave Frequencies

Publication Year: 2010, Page(s):2426 - 2433
Cited by:  Papers (14)
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An improved analytical model of the CMOS 65-, 45-, and 32-nm silicon technology integrated transmission line is proposed. This model is derived from previous classical ones used for printed circuits board lines. Improvements have been performed to take into account the size of integrated lines. The study is validated up to millimeter-wave frequencies for different linewidths realized with various ... View full abstract»

• ### Physics-Based Inductance Extraction for Via Arrays in Parallel Planes for Power Distribution Network Design

Publication Year: 2010, Page(s):2434 - 2447
Cited by:  Papers (37)
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A systematic approach for inductance extraction for via arrays between two parallel planes is presented. Both self and mutual inductance values are obtained based on a cavity model. The physics associated with the via inductances is analyzed, and a rigorous method is developed to derive an equivalent total inductance for multiple via arrays. Analytical equations for the equivalent total inductance... View full abstract»

• ### A Methodology for Combined Modeling of Skin, Proximity, Edge, and Surface Roughness Effects

Publication Year: 2010, Page(s):2448 - 2455
Cited by:  Papers (21)
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A methodology is introduced for modeling resistive losses in planar transmission lines that support the transverse electromagnetic mode. The methodology aims to accurately and systematically account for these losses by modeling the skin, proximity, edge, and surface roughness effects in a combined way. The results show a correlation with three measurements within 5%, and offer insight into the dif... View full abstract»

• ### A Full $Ku$ -Band Reduced-Height Waveguide-to-Microstrip Transition With a Short Transition Length

Publication Year: 2010, Page(s):2456 - 2462
Cited by:  Papers (6)
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A systematic design of a full Ku -band reduced-height waveguide-to-microstrip transition using commercial High Frequency Structure Simulator software is presented. The basic transition is composed of a shorted microstrip probe to a 50- Ω ridge waveguide. An impedance transformer necessary to adapt the 50-Ω ridge waveguide to a reduced-height waveguide was designed using multis... View full abstract»

• ### Impedance-Transforming Symmetric and Asymmetric DC Blocks

Publication Year: 2010, Page(s):2463 - 2474
Cited by:  Papers (24)
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Design formulas of symmetric and asymmetric dc blocks are presented for achieving Chebyshev and Butterworth frequency responses. They can also be used for impedance transformers. Design formulas of symmetric dc blocks are first derived and those of asymmetric dc blocks are also computed based on the symmetric ones. For easy derivation of design formulas of the symmetric dc blocks, coupling coeffic... View full abstract»

• ### Pole-Perturbation Theory for Nonlinear Noise Analysis of All-Pole RF MEMS Tunable Filters

Publication Year: 2010, Page(s):2475 - 2489
Cited by:  Papers (2)
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This paper presents a theoretical approach to predict the effect of nonlinear noise mechanisms in all-pole RF microelectromechanical systems (MEMS) tunable filters. It is shown that both nonlinearity and noise can be expressed as perturbations of poles of the filter transfer function. Perturbations in the bandpass filter are mapped into its equivalent ladder network as perturbations in the prototy... View full abstract»

• ### Characterization of GaN HEMT Low-Frequency Dispersion Through a Multiharmonic Measurement System

Publication Year: 2010, Page(s):2490 - 2496
Cited by:  Papers (47)
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In this paper, the experimental characterization of low-frequency dispersion (i.e., long-term memory effects) affecting microwave GaN HEMTs is carried out by adopting a new nonlinear measurement system, which is based on low-frequency multiharmonic signal sources. The proposed setup, which has been fully automated by a control software procedure, enables given source/load device terminations at fu... View full abstract»

• ### Accuracy Improvement for Line-Series-Shunt Calibration in Broadband Scattering-Parameter Measurements With Applications of On-Wafer Device Characterization

Publication Year: 2010, Page(s):2497 - 2503
Cited by:  Papers (7)  |  Patents (2)
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In this paper, error analysis and accuracy improvement for on-wafer line-series-shunt calibration in broadband scattering parameter (S-parameter) measurements are presented with complete modeling of the resistive series/shunt standards, rather than the simple lumped assumptions that were basic requirements in previous studies. The associated parasitic effects in the models are estimated by ... View full abstract»

• ### Ultra-Wideband Chip Attenuator for Precise Noise Measurements at Cryogenic Temperatures

Publication Year: 2010, Page(s):2504 - 2510
Cited by:  Papers (11)
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A 20-dB chip attenuator designed for cryogenic noise measurements from dc up to 40 GHz is presented. The chip is based on the use of temperature-stable tantalum-nitride thin-film resistors, a high thermal conductivity substrate such as crystal quartz (z-cut), and a suitable design that avoids inner conductor thermal heating, which is an important limiting factor for the precision of cryogenic nois... View full abstract»

• ### New CMOS-Compatible Micromachined Embedded Coplanar Waveguide

Publication Year: 2010, Page(s):2511 - 2516
Cited by:  Papers (1)
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This paper proposes a new robust micromachined embedded coplanar waveguide (CPW). The central and ground plates are partially bent and overlapped within the trench, and due to tight coupling of the E -field between the overlapped plates, the micromachined embedded CPW line is capable of a wide range characteristic impedance (17.9-92.3 Ω), in a compact size. Furthermore, the area in which th... View full abstract»

## Aims & Scope

The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design..

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## Meet Our Editors

Editor-in-Chief
Luca Perregrini
luca.perregrini@unipv.it

Editor-in-Chief
Jose Carlos Pedro
edit.tmtt@ua.pt