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IEEE Microwave Magazine

Issue 6 • Date Oct. 2010

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Displaying Results 1 - 25 of 39
  • [Front cover]

    Publication Year: 2010, Page(s): C1
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  • Table of contents

    Publication Year: 2010, Page(s):3 - 4
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  • Evolution of Noise [From the Guest Editor's Desk]

    Publication Year: 2010, Page(s):6 - 127
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  • A New Publication for MTT-S: IEEE Transactions on Terahertz Science and Technology [President's Column]

    Publication Year: 2010, Page(s):8 - 12
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  • Are We “Waiting for Godot”? [Microwave Surfing]

    Publication Year: 2010, Page(s):14 - 16
    Cited by:  Papers (1)
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  • OML, Inc. [advertisement]

    Publication Year: 2010, Page(s): 15
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  • Mini Circuits - [advertisement]

    Publication Year: 2010, Page(s):18 - 19
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  • Green Sparks [Microwave Bytes]

    Publication Year: 2010, Page(s):20 - 28
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  • Congratulations Fall 2010 MTT-S Undergraduate/Pregraduate Scholarship Awardees! [Education News]

    Publication Year: 2010, Page(s):32 - 38
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  • Thermal Noise and Noise Measurements—A 2010 Update

    Publication Year: 2010, Page(s):40 - 52
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1856 KB) | HTML iconHTML

    We have presented a close look at effects of order hf/kT in noise measurements and in the definition of noise quantities-noise temperature, noise figure, etc. Given the perennial push to higher frequency, lower noise, and smaller uncertainty, such effects are becoming significant in an increasing number of applications, and especially in radio astronomy where the noise temperature of a modern rece... View full abstract»

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  • Microwave Noise and FET Devices

    Publication Year: 2010, Page(s):53 - 60
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1438 KB) | HTML iconHTML

    In this article, a short presentation of available FET technologies (GaAs MESFET, ΠI-V HEMT, and silicon CMOS) has been presented. Why minimum NF is suitable to benchmark different low-noise technologies has been discussed. Following this, basic concepts related to thermal noise in FETs and the reason why such technologies feature outstanding low-noise performance was illustrated/ and a sho... View full abstract»

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  • Interpreting Transistor Noise

    Publication Year: 2010, Page(s):61 - 69
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3490 KB) | HTML iconHTML

    The simple noise models of field effect and bipolar transistors reviewed in this article are quite useful in engineering practice, as illustrated by measured and modeled results. The exact and approximate expressions for the noise parameters of FETs and bipolar transistors reveal certain common noise properties and some general noise properties of both devices. The usefulness of these expressions ... View full abstract»

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  • A Long, Winding Road

    Publication Year: 2010, Page(s):70 - 81
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2854 KB) | HTML iconHTML

    There is a great deal of literature concerning oscillator noise. The problem of oscillator noise has been considered from intuitive to mathematically sophisticated viewpoints. In recent years, treatments of oscillator noise have concentrated on equations that are easier to use or are more complete in their characterization of nonlinearities and noise sources. Oscillator noise analysis has reached ... View full abstract»

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  • Modeling GaN: Powerful but Challenging

    Publication Year: 2010, Page(s):82 - 96
    Cited by:  Papers (23)  |  Patents (1)
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    As GaN technology has developed, first in research laboratories and more recently in multiple commercial device manufacturers, the demand for improved nonlinear models has grown alongside the device process improvements. The need for improved models for GaN is twofold: first, GaN devices have unique nuances in behavior to be addressed; second, there is a desire for improved accuracy to take full a... View full abstract»

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  • Integrated Adjustable Phase Shifters

    Publication Year: 2010, Page(s):97 - 108
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2697 KB) | HTML iconHTML

    When examining a monthly bank account statement, it is not only the number below the bottom line that matters. Whether that number has a minus or plus in front of it is crucial. For many technical problems, the sign matters as well. In circuits, we can change the sign by means of phase shifters. Moreover, by using phase shifters, intermediate states between the signs (including complex values) can... View full abstract»

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  • IMS2011

    Publication Year: 2010, Page(s): 109
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  • Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods [Application Note]

    Publication Year: 2010, Page(s):110 - 121
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (797 KB) | HTML iconHTML

    The article has dealt with problems of noise measurement located on the receiver side. The influence of noise bandwidth B and receiver gain GREC on the measured power level FNwas discussed. The digital realization of B enables a revival of the signal generator method. The need for a calibrated noise generator is eliminated and a VNA can be used a receiver. A transistor measurement shows that the l... View full abstract»

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  • 2010 IEEE Compound Semiconductor IC Symposium

    Publication Year: 2010, Page(s): 115
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  • MTT Members: We'd Like to Keep You Busy! [TCC Tidbits]

    Publication Year: 2010, Page(s):122 - 123
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  • MTT-S Workshop Series (IMWS) and MGA Committee News [Around the Globe]

    Publication Year: 2010, Page(s):124 - 126
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  • Short Note from the Desk of the Membership and Geographical Activities Committee [Around the Globe]

    Publication Year: 2010, Page(s):126 - 127
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  • Stoyan I. Ganchev [Transitions]

    Publication Year: 2010, Page(s):128 - 130
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  • ARMMS

    Publication Year: 2010, Page(s): 130
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  • [Recently Published Books]

    Publication Year: 2010, Page(s): 131
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  • 2010 WAMICON—Survey Says “Great Show” at This Year's East Coast Venue [Conference Report]

    Publication Year: 2010, Page(s):132 - 134
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Aims & Scope

IEEE Microwave Magazine is intended to serve primarily as a source of information of interest to professionals in the field of microwave theory and techniques.

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Meet Our Editors

Editor-in-Chief
Alfy Riddle
M/A-COM Technology Solutions
microwave.editor@ieee.org

408-506-0972