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Microwave Magazine, IEEE

Issue 6 • Date Oct. 2010

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Displaying Results 1 - 25 of 39
  • [Front cover]

    Page(s): C1
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  • Table of contents

    Page(s): 3 - 4
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  • Evolution of Noise [From the Guest Editor's Desk]

    Page(s): 6 - 127
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  • A New Publication for MTT-S: IEEE Transactions on Terahertz Science and Technology [President's Column]

    Page(s): 8 - 12
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  • Are We “Waiting for Godot”? [Microwave Surfing]

    Page(s): 14 - 16
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  • OML, Inc. [advertisement]

    Page(s): 15
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  • Mini Circuits - [advertisement]

    Page(s): 18 - 19
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  • Green Sparks [Microwave Bytes]

    Page(s): 20 - 28
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  • Congratulations Fall 2010 MTT-S Undergraduate/Pregraduate Scholarship Awardees! [Education News]

    Page(s): 32 - 38
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  • Thermal Noise and Noise Measurements—A 2010 Update

    Page(s): 40 - 52
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1856 KB) |  | HTML iconHTML  

    We have presented a close look at effects of order hf/kT in noise measurements and in the definition of noise quantities-noise temperature, noise figure, etc. Given the perennial push to higher frequency, lower noise, and smaller uncertainty, such effects are becoming significant in an increasing number of applications, and especially in radio astronomy where the noise temperature of a modern receiver can be within a factor of a few of the quantum limit. In particular, we have discussed issues arising from the definition of noise temperature and the treatment of contributions from vacuum fluctuations. There is more than one correct way to deal with these effects, but it is important to be consistent in one's approach and not to mix methods. View full abstract»

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  • Microwave Noise and FET Devices

    Page(s): 53 - 60
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    In this article, a short presentation of available FET technologies (GaAs MESFET, ΠI-V HEMT, and silicon CMOS) has been presented. Why minimum NF is suitable to benchmark different low-noise technologies has been discussed. Following this, basic concepts related to thermal noise in FETs and the reason why such technologies feature outstanding low-noise performance was illustrated/ and a short survey of minimum NF evolution has been presented. InP HEMT technology undoubtedly constitutes the best low-noise technology (especially to address applications in W or G Band). The noise performance of silicon MOSFET technology/ which is widely used in many applications because of its low cost, does not outperform that of GaAs pHEMT technology/ unless channel engineering is performed. View full abstract»

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  • Interpreting Transistor Noise

    Page(s): 61 - 69
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    The simple noise models of field effect and bipolar transistors reviewed in this article are quite useful in engineering practice, as illustrated by measured and modeled results. The exact and approximate expressions for the noise parameters of FETs and bipolar transistors reveal certain common noise properties and some general noise properties of both devices. The usefulness of these expressions in interpreting the dependence of measured noise parameters on frequency, bias, and temperature and, consequently, in checking of consistency of measured data has been demonstrated. View full abstract»

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  • A Long, Winding Road

    Page(s): 70 - 81
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    There is a great deal of literature concerning oscillator noise. The problem of oscillator noise has been considered from intuitive to mathematically sophisticated viewpoints. In recent years, treatments of oscillator noise have concentrated on equations that are easier to use or are more complete in their characterization of nonlinearities and noise sources. Oscillator noise analysis has reached a level of sophistication that allows several general theories to be constructed. This article presents a historical tour of oscillator noise analysis and will not go into detail on any one method. It provides a brief tutorial on oscillator noise, and a survey of many of the papers that have contributed to our present understanding. Because many authors use different approaches and notation, there will be a number of different equations presented without derivation. The various equations cited will be described in enough detail to show how they contribute to understanding oscillator noise, and the reader is encouraged to refer to the original papers for detailed discussions. The “History” section will present a family tree of oscillator noise, and the “Present Models” section will review some of the more seminal papers. Tutorials on phase noise can be found in handbooks and in the references from this article. Please see ”Oscillator Noise Basics“ for background information on oscillation and noise. View full abstract»

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  • Modeling GaN: Powerful but Challenging

    Page(s): 82 - 96
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    As GaN technology has developed, first in research laboratories and more recently in multiple commercial device manufacturers, the demand for improved nonlinear models has grown alongside the device process improvements. The need for improved models for GaN is twofold: first, GaN devices have unique nuances in behavior to be addressed; second, there is a desire for improved accuracy to take full advantage of the performance wins to be gained by GaN HEMT performance in the areas of high efficiency and high-power operation. View full abstract»

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  • Integrated Adjustable Phase Shifters

    Page(s): 97 - 108
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    When examining a monthly bank account statement, it is not only the number below the bottom line that matters. Whether that number has a minus or plus in front of it is crucial. For many technical problems, the sign matters as well. In circuits, we can change the sign by means of phase shifters. Moreover, by using phase shifters, intermediate states between the signs (including complex values) can be set in circuits. Hence, phase shifters play an important role in electrical engineering. Unfortunately, this article does not give direct insights to change the sign of your bank statement. However, it aims to give a comprehensive overview of tunable phase shifters for radio frequency (RF) applications including cookbooklike design guidelines and performance comparisons. The focus of this article is put on phase shifters fully integrated in a chip. View full abstract»

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  • IMS2011

    Page(s): 109
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  • Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods [Application Note]

    Page(s): 110 - 121
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (797 KB) |  | HTML iconHTML  

    The article has dealt with problems of noise measurement located on the receiver side. The influence of noise bandwidth B and receiver gain GREC on the measured power level FNwas discussed. The digital realization of B enables a revival of the signal generator method. The need for a calibrated noise generator is eliminated and a VNA can be used a receiver. A transistor measurement shows that the linearity of the receiver is extremely important. Through the application of the cold-source method, this influence can be significantly reduced. View full abstract»

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  • 2010 IEEE Compound Semiconductor IC Symposium

    Page(s): 115
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  • MTT Members: We'd Like to Keep You Busy! [TCC Tidbits]

    Page(s): 122 - 123
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  • MTT-S Workshop Series (IMWS) and MGA Committee News [Around the Globe]

    Page(s): 124 - 126
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  • Short Note from the Desk of the Membership and Geographical Activities Committee [Around the Globe]

    Page(s): 126 - 127
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  • Stoyan I. Ganchev [Transitions]

    Page(s): 128 - 130
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  • ARMMS

    Page(s): 130
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  • [Recently Published Books]

    Page(s): 131
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  • 2010 WAMICON—Survey Says “Great Show” at This Year's East Coast Venue [Conference Report]

    Page(s): 132 - 134
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Aims & Scope

IEEE Microwave Magazine is intended to serve primarily as a source of information of interest to professionals in the field of microwave theory and techniques.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
John Wood
Maxim Integrated Products, Inc.

San Jose, CA      USA
john.wood@ieee.org
Phone:+1 480 577 0927