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# IEEE Transactions on Nanotechnology

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Displaying Results 1 - 24 of 24

Publication Year: 2010, Page(s): C1
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• ### IEEE Transactions on Nanotechnology publication information

Publication Year: 2010, Page(s): C2
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Publication Year: 2010, Page(s):129 - 130
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• ### Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

Publication Year: 2010, Page(s):131 - 133
Cited by:  Papers (24)
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A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network is broken and healed repeatedly during switching. Dependence of reset current on electrode area is e... View full abstract»

• ### A Novel Nanometeric Plasmonic Refractive Index Sensor

Publication Year: 2010, Page(s):134 - 137
Cited by:  Papers (22)
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A novel surface plasmon-polariton (SPP) refractive index sensor based on the coupling of a split waveguide mode with a cavity mode in the metal is proposed and studied in this paper. Both analytic and simulated results show that the resonant wavelength of the sensor has a linear relationship with the refractive index of materials under sensing. Based on the relationship, the refractive index of th... View full abstract»

• ### Fabrication of Sub-10 nm Planar Nanofluidic Channels Through Native Oxide Etch and Anodic Wafer Bonding

Publication Year: 2010, Page(s):138 - 141
Cited by:  Papers (7)
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A simple, multiple-hydrofluoric (HF)-dip process is developed and characterized to etch native silicon-dioxide (SiO2) to obtain shallow silicon trenches. The room-temperature SiO2 grow-etch-grow process yields an etch rate of ~ 1 nm/HF-dip with atomically smooth trench surface. Low-temperature, low-voltage anodic bonding yields sub-10 nm deep planar nanochannels with aspect r... View full abstract»

• ### Analysis of Photocurrent Spectra of SiGe/Si Quantum-Well Solar Cell

Publication Year: 2010, Page(s):142 - 148
Cited by:  Papers (5)
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A simple theoretical model is proposed to quantitatively explain the dependence of photocurrent spectra for multiple quantum-well (MQW) p-i-n diode on the absorption coefficient and the applied reverse bias. Excellent agreement is obtained between model calculation and the experimental photocurrent spectra for a 30-period 15-nm Si0.85Ge0.15/15-nm Si MQW p-i-n diode, where the... View full abstract»

• ### Evolution of Various Nanostructures and Preservation of Self-Assembled InAs Quantum Dots During GaAs Capping

Publication Year: 2010, Page(s):149 - 156
Cited by:  Papers (10)
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The fabrication of nanostructures such as quantum rods (QRDs), quantum dot pairs (QDPs), bridged QDPs, and dimpled QDs (DQDs) is achieved by an application of a shallow GaAs layer using solid source molecular beam epitaxy (MBE). More specifically, the shape transition and evolution process as well as the preservation of original dome shape of self-assembled InAs quantum dots (QDs) are studied duri... View full abstract»

• ### Artificial Anisotropy in Circular Photonic Crystals and Applications

Publication Year: 2010, Page(s):157 - 169
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In this paper, we analyze the birefringence effect in circular photonic crystals (CphCs). The studied CphCs are dielectric rings (DRs) and photonic crystals with cylindrical air holes arranged in circular patterns. The dielectric concentric circular patterns admit two preferred propagation directions defined by an extraordinary and an ordinary refractive index, representing two electric field pola... View full abstract»

• ### An Optimized Majority Logic Synthesis Methodology for Quantum-Dot Cellular Automata

Publication Year: 2010, Page(s):170 - 183
Cited by:  Papers (24)  |  Patents (1)
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Quantum-dot cellular automata (QCA) has been widely considered as a replacement candidate for complementary metal-oxide semiconductor (CMOS). The fundamental logic device in QCA is the majority gate. In this paper, we propose an efficient methodology for majority logic synthesis of arbitrary Boolean functions. We prove that our method provides a minimal majority expression and an optimal QCA layou... View full abstract»

• ### Modeling SWCNT Bandgap and Effective Mass Variation Using a Monte Carlo Approach

Publication Year: 2010, Page(s):184 - 193
Cited by:  Papers (23)
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Synthesizing single-walled carbon nanotubes (SWCNTs) with accurate structural control has been widely acknowledged as an exceedingly complex task culminating in the realization of CNT devices with uncertain electronic behavior. In this paper, we apply a statistical approach in predicting the SWCNT bandgap and effective mass variation for typical uncertainties associated with the geometrical struct... View full abstract»

• ### CMOL/CMOS Implementations of Bayesian Polytree Inference: Digital and Mixed-Signal Architectures and Performance/Price

Publication Year: 2010, Page(s):194 - 211
Cited by:  Papers (6)
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In this paper, we focus on aspects of the hardware implementation of the Bayesian inference framework within the George and Hawkins' model. This framework is based on Judea Pearl's belief propagation. We then present a ??hardware design space exploration?? methodology for implementing and analyzing the (digital and mixed-signal) hardware for the Bayesian (polytree) inference framework. This, parti... View full abstract»

• ### Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the $Y$ -Function Technique

Publication Year: 2010, Page(s):212 - 217
Cited by:  Papers (16)
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The series resistance, R sd in silicon nanowire FETs (Si-NWFET) is extracted unambiguously, using the Y -function technique, in conjunction with the drain current and transconductance data. The volume channel inversion in Si-NWFET renders the charge carriers relatively free of the surface scattering and concomitant degradation of mobility. As a result, the Y -functi... View full abstract»

• ### Combustion Synthesis and Characterization of Bulk Nanocrystalline ${bf Fe}_{bf 88} {bf Si}_{bf 12}$ Alloy

Publication Year: 2010, Page(s):218 - 222
Cited by:  Papers (8)
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Bulk nanocrystalline Fe88Si12 alloy is fabricated by a combustion synthesis processing that is convenient, low in cost, and capable of being scaled up. The Fe88Si12 alloy consists of two phases: ¿-Fe(Si) and Fe3Si. It is a composite structure of meshwork dispersed in a matrix. The meshwork is a few micrometers in length and 0.5-1 ¿m ... View full abstract»

• ### Characterization of Cobalt Nanowires Fabricated in Anodic Alumina Template Through AC Electrodeposition

Publication Year: 2010, Page(s):223 - 228
Cited by:  Papers (12)
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Cobalt nanowires were fabricated by alternating current electrodeposition using anodic porous alumina template. Diameter of the pores was controlled by the pore widening time. Effect of pore widening time on the magnetic properties and microstructure of the nanowires was investigated. High-resolution scanning transmission electron microscopy was used to study the morphology of the pores as well as... View full abstract»

• ### Fabrication of Fractal Surfaces by Electron Beam Lithography

Publication Year: 2010, Page(s):229 - 236
Cited by:  Papers (3)
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We describe a method based on electron beam lithography to fabricate patterns of fractal islands on a surface. The island morphology resembles that of a random deposition of particles in a diffusion-limited aggregation regime in 2-D, which is often encountered in the growth of atoms and molecules upon ultrahigh vacuum sublimation. With our fabrication protocol, the morphological parameters of the ... View full abstract»

• ### Role of Metal–Semiconductor Contact in Nanowire Field-Effect Transistors

Publication Year: 2010, Page(s):237 - 242
Cited by:  Papers (8)
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In this paper, we present a systematic study of the role of metal/semiconductor nanowire (NW) contact in back-gated Ge and Si NW Schottky-barrier (SB) FETs. Our results show that the performance of such devices is largely dominated by the carrier injection efficiency at the source contact, which, in turn, is controlled by metal contact depth and gate bias. Using low-temperature annealing of back-g... View full abstract»

• ### Electronic Properties of Nitrogen-Atom-Adsorbed Graphene Nanoribbons With Armchair Edges

Publication Year: 2010, Page(s):243 - 247
Cited by:  Papers (14)
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Using first-principles calculations based on density functional theory, we systematically study adsorption of nitrogen atom on graphene nanoribbons with armchair edges (AGNRs). It is found that the N atom prefers to be adsorbed at the edge. The adsorption mechanism is discussed from the strong hybridization between the electron states in both N adatom and AGNR. It is also exhibited that the ?? View full abstract»

• ### Investigation and Analysis of Mismatching Properties for Nanoscale Strained MOSFETs

Publication Year: 2010, Page(s):248 - 253
Cited by:  Papers (2)
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This paper investigates and analyzes the matching properties of nanoscale strained MOSFETs under various bias conditions. Through a comprehensive comparison between coprocessed strained and unstrained PMOSFETs, the impact of process-induced uniaxial strain on the matching performance of MOS devices has been assessed and analyzed. Our examination indicates that, in the low-gate-voltage-overdrive (|... View full abstract»

• ### Selective Alignment of Gold Nanowires Synthesized With DNA as Template by Surface-Patterning Technique

Publication Year: 2010, Page(s):254 - 257
Cited by:  Papers (6)
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The direct and selective assembly of deoxyribonucleic acid (DNA)-templated metal (e.g., Ag, Au, Cu, and Pd) nanowires (NWs) is a key technique for the application to electronic devices and nanowire-based biosensors. In this study, a new technique was developed to carefully control the interval of DNA-templated gold NWs (AuNWs) using surface-patterning techniques. The ??-DNA molecules were stretche... View full abstract»

• ### Improvement of Thermal Stability of Ni Germanide Using a Ni–Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs

Publication Year: 2010, Page(s):258 - 263
Cited by:  Papers (12)
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In this paper, thermally stable Ni germanide using a Ni-Pt(1%) alloy and TiN capping layer is proposed for high-performance Ge MOSFETs. The proposed Ni-Pt(1%) alloy structure exhibits low-temperature germanidation with a wide temperature window for rapid thermal processing. Moreover, sheet resistance is stable and the germanide interface shows less agglomeration despite high-temperature postgerman... View full abstract»

Publication Year: 2010, Page(s): 264
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• ### IEEE Transactions on Nanotechnology information for authors

Publication Year: 2010, Page(s): C3
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• ### Blank page [back cover]

Publication Year: 2010, Page(s): C4
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## Aims & Scope

The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Fabrizio Lombardi
Dept. of ECE
Northeastern Univ.