# IEEE Microwave and Wireless Components Letters

## Filter Results

Displaying Results 1 - 25 of 29

Publication Year: 2010, Page(s):C1 - C4
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• ### IEEE Microwave and Wireless Components Letters publication information

Publication Year: 2010, Page(s): C2
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• ### Mur Absorbing Boundary Condition for Efficient Fundamental 3-D LOD-FDTD

Publication Year: 2010, Page(s):61 - 63
Cited by:  Papers (10)
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This letter presents the implementations of Mur first-order absorbing boundary condition (ABC) for efficient fundamental scheme of 3-D locally one-dimensional finite-difference time-domain (LOD-FDTD) method. The Mur ABC is incorporated into the efficient fundamental scheme using consistent implementation and a novel implementation with lower reflection coefficient. Both implementations in the effi... View full abstract»

• ### Open Cloaks Via Embedded Optical Transformation

Publication Year: 2010, Page(s):64 - 66
Cited by:  Papers (7)
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Based on the concept of complementary media, a class of open invisible cloaks is proposed via embedded optical transformation. General formulations of the homogeneous parameters for linear transformation and inhomogeneous parameters for nonlinear transformation are derived. The advantage is that the cloaked object is not blinded and can exchange information with the outer region. Full-wave simulat... View full abstract»

• ### New Miniaturized Dual-Mode Dual-Band Ring Resonator Bandpass Filter With Microwave $C$-Sections

Publication Year: 2010, Page(s):67 - 69
Cited by:  Papers (68)
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A new miniaturized dual-mode dual-band ring resonator bandpass filter is implemented by a cascade of several microwave C-sections. Each C-section is used to substitute a transmission line section of designated electrical length. Through proper design of input/output coupling configuration, two transmission zeros can be created on both sides of each passband. Two circuits with four an... View full abstract»

• ### Balanced Dual-Band BPF With Stub-Loaded SIRs for Common-Mode Suppression

Publication Year: 2010, Page(s):70 - 72
Cited by:  Papers (58)
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A new fourth-order balanced dual-band band-pass filter (BPF) designed using four coupled bi-section half-wavelength (??/2) stepped-impedance resonators (SIRs) is presented. To obtain the required differential-mode (DM) operation with suppressed common-mode (CM) transmission, the SIRs were designed to have the same odd-mode, but different even-mode, resonant frequencies. For that purpose, the two i... View full abstract»

• ### Dual-Mode Dual-Band Filter With Band Notch Structures

Publication Year: 2010, Page(s):73 - 75
Cited by:  Papers (29)
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A novel approach for designing dual-mode dual-band bandpass filters is proposed and experimentally studied. By embedding a pair of slits in the square patch, the dual-band response is realized and one transmission zero is introduced between the two passbands. Two degenerate modes are achieved by loading with a small square perturbation, which can be placed at the diagonal line. There are three tra... View full abstract»

• ### Development of a Compact Broadband Folded Hybrid Coupler on Multilayer Organic Substrate

Publication Year: 2010, Page(s):76 - 78
Cited by:  Papers (6)
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We present the design and fabrication of a wide bandwidth folded hybrid coupler on a multilayer organic substrate. The coupler is designed with a tandem connection of two 5-sections with a coupling of 8.34 dB. We propose a novel center coupling structure that achieves tight coupling while being compatible with printed circuit board fabrication processes. The folded coupler achieves a bandwidth of ... View full abstract»

• ### Miniaturized FSS and Patch Antenna Array Coupling for Angle-Independent, High-Order Spatial Filtering

Publication Year: 2010, Page(s):79 - 81
Cited by:  Papers (10)
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A new filter-antenna array design is presented in this article. This design approach can be employed to simplify the vertical integration of array beamformers. Basically, by placing a high-order filter, whose response is not sensitive to angle of arrival, in front of the array elements, the need for integrating bulky RF filters behind each element is eliminated. A new method for design of such pha... View full abstract»

• ### A Low Loss High Isolation DC-60 GHz SPDT Traveling-Wave Switch With a Body Bias Technique in 90 nm CMOS Process

Publication Year: 2010, Page(s):82 - 84
Cited by:  Papers (23)  |  Patents (1)
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In this letter, a low loss high isolation broadband single-port double-throw (SPDT) traveling-wave switch using 90 nm CMOS technology is presented. A body bias technique is utilized to enhance the circuit performance of the switch, especially for the operation frequency above 30 GHz. The parasitic capacitance between the drain and source of the NMOS transistor can be further reduced using the nega... View full abstract»

• ### A 60–110 GHz Transmission-Line Integrated SPDT Switch in 90 nm CMOS Technology

Publication Year: 2010, Page(s):85 - 87
Cited by:  Papers (17)
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This letter demonstrates a fully integrated transmit/receive single-pole-double-throw switch in standard bulk 90 nm CMOS process. This switch is based on the transmission-line integrated approach that reduces the effect of parasitic capacitance of transistors in the desired band, and this approach can achieve good isolation and return loss with fewer stages of transistors and broad bandwidth. The ... View full abstract»

• ### Low Phase Noise Differential Vackar VCO in 0.18 $mu{rm m}$ CMOS Technology

Publication Year: 2010, Page(s):88 - 90
Cited by:  Papers (11)
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In this letter, we present the measured performance of a differential Vackar voltage-controlled oscillator (VCO) implemented for the first time in CMOS technology. The Vackar VCO provided good isolation between the LC tank and the loss-compensating active circuit; thus, excellent frequency stability was achieved over the frequency tuning range. The Vackar VCO was implemented using nMOS transistors... View full abstract»

• ### A Fully-Differential Complementary Hartley VCO in 0.18 $mu$m CMOS Technology

Publication Year: 2010, Page(s):91 - 93
Cited by:  Papers (12)
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In this letter, a new complementary Hartley (C-Hartley) voltage controlled oscillator (VCO) with fully differential outputs is proposed, in which the self-biasing configuration is introduced to solve the biasing difficulty of a Hartley VCO by employing a five-port transformer. The proposed C-Hartley VCO with the center frequency of 5.6 GHz is implemented in a 1P6M 0.18 μm CMOS process. The... View full abstract»

• ### A 47 GHz $LC$ Cross-Coupled VCO Employing High- $Q$ Island-Gate Varactor for Phase Noise Reduction

Publication Year: 2010, Page(s):94 - 96
Cited by:  Papers (8)
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A 47 GHz LC cross-coupled voltage controlled oscillator (VCO) employing the high-Q island-gate varactor (IGV) based on a 0.13 ¿m RFCMOS technology is reported in this work. To verify the improvement in the phase noise, two otherwise identical VCOs, each with an IGV and a conventional multi-finger varactor, were fabricated and the phase noise performance was compared. With VDD... View full abstract»

• ### A Wide Tuning Range 69 GHz Push-Push VCO Using 0.18 $mu{rm m}$ CMOS Technology

Publication Year: 2010, Page(s):97 - 99
Cited by:  Papers (23)
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A wide tuning range V-band push-push CMOS voltage controlled oscillator (VCO) is proposed in this study. A new core complementary Colpitts structure was adopted in a 0.18 μm CMOS process to reduce dc power consumption and to improve tuning range owing to the reduction weighting of FET induced capacitance of L-C tank. The designed VCO oscillates from 64.2 to 69.4 GHz with a 5.2 GHz tuning r... View full abstract»

• ### A Low-Power Self-Forward-Body-Bias CMOS LNA for 3–6.5-GHz UWB Receivers

Publication Year: 2010, Page(s):100 - 102
Cited by:  Papers (20)
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A low-power low-noise amplifier (LNA) implemented in 0.18 ??m CMOS technology utilizing a self-forward-body-bias (SFBB) technique is proposed for UWB low-frequency band system. By using the SFBB technique, it reduces supply voltage as well as saves additional bias circuits, which leads to low power consumption of 4.5 mW with low supply voltage of 1.06 V for two drain-to-source voltage drops. The c... View full abstract»

• ### A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging

Publication Year: 2010, Page(s):103 - 105
Cited by:  Papers (27)  |  Patents (1)
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This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a low-cost 0.18 ??m SiGe BiCMOS technology. Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieves a peak power gain of 14.5 dB at 77 GHz with a 3 dB bandwidth of 14.5 GHz from 69 to 83.5 GHz. The... View full abstract»

• ### CMOS RF Power Amplifier for UHF Stationary RFID Reader

Publication Year: 2010, Page(s):106 - 108
Cited by:  Papers (10)
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A CMOS power amplifier (PA) for a UHF (860-960 MHz) stationary RFID reader is presented. To design a high power and power efficient CMOS PA, quasi four pair structure and integrated passive device (IPD) transformers are used. An amplitude modulation is performed through the cascode gate with a pulse shaping filter. The chips are fabricated in a 0.18 ??m CMOS process and IPD. Measurements show outp... View full abstract»

• ### A Saturated Doherty Power Amplifier Based On Saturated Amplifier

Publication Year: 2010, Page(s):109 - 111
Cited by:  Papers (18)
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A saturated Doherty power amplifier (PA) based on the saturated PA tuned by the self-generated harmonic currents is presented. When driven with mobile WiMAX 1FA signal, this Doherty PA demonstrates high efficiency performance (average 57%) over the WiMAX band from 2.5 GHz to 2.7 GHz. Simulated and experimental results allow the evaluation for the load modulation behavior of the saturated PA and ba... View full abstract»

• ### A High-Linearity Wideband Power Amplifier With Cascaded Third-Order Analog Predistorters

Publication Year: 2010, Page(s):112 - 114
Cited by:  Papers (4)
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A high-linearity wideband analog predistortion power amplifier (PA) is presented. The memory effects of the PA are reduced by a high drain bias voltage as well as a wide bias line and several decoupling capacitors. The simple cascaded third-order analog predistorters (CTAPDs) are used to cancel the third- and fifth-order intermodulations (IM3s and IM5s) of the low-memory PA. For verification, the ... View full abstract»

• ### A Biphase Modulator Circuit for Impulse Radio-UWB Applications

Publication Year: 2010, Page(s):115 - 117
Cited by:  Papers (5)
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This letter presents a circuit to provide binary phase shift keying to ultra-wideband (UWB) impulse transmitters. The circuit is based on a Gilbert-cell multiplier and uses active on-chip balun and unbalanced-to-balanced converters for single-ended to single-ended operation. Detailed measurements of the circuit show a gain ripple of ??1 dB at an overall gain of -2 dB, an input reflection below -12... View full abstract»

• ### Comparison of Large-Signal-Network-Analyzer Calibrations

Publication Year: 2010, Page(s):118 - 120
Cited by:  Papers (1)
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We develop a procedure and metrics for comparing large-signal-network-analyzer calibrations. The metrics we develop provide a bound on differences between measurements obtained from large-signal-network-analyzer calibrations, as well as specific information on how the power, phase, and scattering-parameter portions of the calibrations differ. View full abstract»

• ### Further Improvements in Real-Time Load-Pull Measurement Accuracy

Publication Year: 2010, Page(s):121 - 123
Cited by:  Papers (2)
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This letter proposes a new solution to improve the accuracy of real-time load-pull measurement systems. Since it is well known that load-pull measurement accuracy depends on the calibration residual uncertainty, the presented solution uses a new algorithm to reduce it. Measurement results that corroborate the proposed solution, with respect to the previous one, show the improvements that have been... View full abstract»

• ### High TX-to-RX Isolation in UHF RFID Using Narrowband Leaking Carrier Canceller

Publication Year: 2010, Page(s):124 - 126
Cited by:  Papers (12)  |  Patents (1)
| | PDF (133 KB) | HTML

Ultra-high frequency (UHF) radio frequency identification (RFID) system suffers from large leakage of the carrier due to insufficient TX-to-RX isolation. A narrowband leaking carrier canceller (LCC) for UHF RFID is proposed to enhance the isolation. Hardware realization is carried out based on simulation model in ADS (advanced design system). Measurement results indicate that the TX-to-RX isolatio... View full abstract»

• ### 3.125 Gb/s Impulse Radio Ultra-Wideband Photonic Generation and Distribution Over a 50 km Fiber With Wireless Transmission

Publication Year: 2010, Page(s):127 - 129
Cited by:  Papers (18)
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A 3.125 Gb/s photonic impulse radio ultra-wideband signal is created using the incoherent optical field summation resulting from the cross gain modulation of an uncooled distributed feedback laser injected with an external cavity laser. After 50 km of fiber and wireless transmission over 2.9-3.3-m, successful detection using a digital signal processing receiver is achieved. View full abstract»

## Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

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## Meet Our Editors

Editor in Chief
N. Scott Barker
Dept. Elect. Comp. Eng.
University of Virginia
Charlottesville, VA 22904
barker@virginia.edu
dsk6n@virginia.edu