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IBM Journal of Research and Development

Issue 3 • Date July 1960

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Displaying Results 1 - 24 of 24
  • Foreword to papers in this issue [Vapor Growth]

    Publication Year: 1960 , Page(s): 247
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  • Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle Process

    Publication Year: 1960 , Page(s): 248 - 255
    Cited by:  Papers (3)
    Click to expandAbstract | PDF file iconPDF (975 KB)  

    The Ge-I2 disproportionation reaction in a sealed tube will deposit Ge epitaxially upon Ge seeds at a typical rate of 10µ/hr at a typical temperature of 400°C. Dislocations are of the same kind and approximate concentrations as observed in ordinary melt-grown Ge. Chemical purity is comparable to the best melt-grown Ge. The fraction of donors transferred from the source mat... View full abstract»

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  • Electrical Properties of Vapor-Grown Ge Junctions

    Publication Year: 1960 , Page(s): 256 - 263
    Click to expandAbstract | PDF file iconPDF (855 KB)  

    A method of fabricating p-n junctions and p-n junction devices by a closed-cycle iodide vapor-growth process is described. The electrical characteristics of junctions made by alternately depositing p-type and n-type germanium onto a germanium substrate compare favorably with those fabricated by other means. Device arrays, such as diode matrices, and multijunction structures have been made by this ... View full abstract»

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  • A Vapor-Grown Variable Capacitance Diode

    Publication Year: 1960 , Page(s): 264 - 268
    Cited by:  Papers (3)
    Click to expandAbstract | PDF file iconPDF (537 KB)  

    Germanium p-n junctions have been made which have a large fractional variation of capacitance with voltage and which have promise of being operable at high frequencies. These diodes are produced by a vapor-growth process in which the doping is switched from n-type to p-type during growth. Capacitances which vary as the reciprocal of voltage over a considerable range have been observed. This capaci... View full abstract»

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  • Radiotracer Studies of the Incorporation of Iodine into Vapor-Grown Ge

    Publication Year: 1960 , Page(s): 269 - 274
    Click to expandAbstract | PDF file iconPDF (638 KB)  

    Measurements of the incorporation of iodine into single crystals of Ge grown by the disproportionation of GeI2 have been made using I131 as a radioactive tracer. The results show that I is not likely to be a hindrance to device use of this material since the amount incorporated is moderately low (1014–1015 atoms/cm3). and does not appea... View full abstract»

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  • Incorporation of As Into Vapor-Grown Ge

    Publication Year: 1960 , Page(s): 275 - 279
    Click to expandAbstract | PDF file iconPDF (533 KB)  

    The incorporation of arsenic into single-crystal germanium grown by the disproportionation of GeI2 was studied using As76 as a radioactive tracer, and using measurements of the Hall effect. The deposition was carried out in a sealed tube using as source material a single crystal of Ge doped to 2.5 × 1019 atoms/cm3 with As. It was found that all th... View full abstract»

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  • Tunnel Diodes by Vapor Growth of Ge on Ge and on GaAs [Letter to the Editor]

    Publication Year: 1960 , Page(s): 280 - 282
    Cited by:  Papers (1)
    PDF file iconPDF (522 KB)  
    Freely Available from IEEE
  • Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]

    Publication Year: 1960 , Page(s): 283 - 287
    Cited by:  Papers (9)
    PDF file iconPDF (619 KB)  
    Freely Available from IEEE
  • Epitaxial Growth of Silicon [Letter to the Editor]

    Publication Year: 1960 , Page(s): 288 - 295
    Cited by:  Papers (3)
    PDF file iconPDF (1402 KB)  
    Freely Available from IEEE
  • Incorporation of Au into Vapor-Grown Ge [Letter to the Editor]

    Publication Year: 1960 , Page(s): 296 - 298
    PDF file iconPDF (421 KB)  
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  • Impurity Introduction during Epitaxial Growth of Silicon

    Publication Year: 1960 , Page(s): 299 - 301
    Cited by:  Patents (2)
    Click to expandAbstract | PDF file iconPDF (408 KB)  

    In this note it has been shown that the silicon iodide disproportionation process for growing epitaxial layers of silicon is also capable of transporting and codepositing desired impurities. Certain Group I11 and V elements such as B, P, As and Sb, can be introduced controllably into epitaxial layers of silicon during the growth. Impurity concentrations obtained cover 4 orders of magnitude, reachi... View full abstract»

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  • Dislocation Content in Epitaxially Vapor-Grown Ge Crystals [Letter to the Editor]

    Publication Year: 1960 , Page(s): 302 - 304
    PDF file iconPDF (613 KB)  
    Freely Available from IEEE
  • Physical versus Logical Coupling in Memory Systems

    Publication Year: 1960 , Page(s): 305 - 310
    Cited by:  Papers (6)
    Click to expandAbstract | PDF file iconPDF (730 KB)  

    A memory system consisting of bistable static dissipationless units such as ferrites, ferroelectrics, or cryotrons is considered. For a given amount of physical material the memory capacity may be increased by using small volumes of the bistable material for each bit. If made sufficiently small, however, the individual bits will become unreliable because of the influence of thermal agitation and q... View full abstract»

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  • Synthesis of a Communication Net

    Publication Year: 1960 , Page(s): 311 - 320
    Cited by:  Papers (10)
    Click to expandAbstract | PDF file iconPDF (774 KB)  

    A systematic method is given for the realization of communication nets from their terminal capacity matrices. It is shown that this procedure results in a net whose total branch capacity is minimum for all nets satisfying the same terminal capacity matrix. It is also shown that when the terminal capacity matrix is indeterminate, then, for a given total branch capacity, the total terminal capacity ... View full abstract»

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  • Synthesis of Switching Functions by Linear Graph Theory

    Publication Year: 1960 , Page(s): 321 - 328
    Cited by:  Papers (3)
    Click to expandAbstract | PDF file iconPDF (741 KB)  

    Techniques of linear graph theory are applied to the study of switching networks. The first part treats the relationships among paths and circuits in a graph which will give a simple method of analyzing switching networks. The necessary conditions are given for the realizability of switching networks consisting of the specified elements. The second part is the synthesis which is accomplished by th... View full abstract»

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  • Error Correcting Codes for Correcting Bursts of Errors

    Publication Year: 1960 , Page(s): 329 - 334
    Cited by:  Papers (15)  |  Patents (1)
    Click to expandAbstract | PDF file iconPDF (566 KB)  

    It is observed that the codes of Abramson, Melas and others are essentially described by the characteristic equation that a certain matrix satisfies. Consequently it is found that transformations of these codes are possible provided that the characteristic equation is preserved. These transformations may then be exploited to produce codes that have a simple implementation and, in fact, a general m... View full abstract»

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  • A Character-Recognition Study

    Publication Year: 1960 , Page(s): 335 - 348
    Cited by:  Papers (3)
    Click to expandAbstract | PDF file iconPDF (1160 KB)  

    A study of the single-gap-scan approach to character recognition, using an IBM 650 for simulation, is reported. Ten specially designed digits were used in this study. Character recognition is discussed in terms of some simple concepts from n-dimensional geometry. The main contribution is an effective method for using a computer to aid in the design of the type font. This procedure is a natural dev... View full abstract»

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  • On Dimensional Analysis

    Publication Year: 1960 , Page(s): 349 - 356
    Click to expandAbstract | PDF file iconPDF (693 KB)  

    The dimensions of physical quantities q are interpreted as vectors qii1, γi2, …,γin)≡γi1b1i2b2+…+γinbn, where the basic elements bj generating the vector space represent the basic quantities of the dimensional sy... View full abstract»

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  • Note on Perturbation of a Uniform Magnetic Field by a Cube of Magnetic Material [Letter to the Editor]

    Publication Year: 1960 , Page(s): 357 - 358
    PDF file iconPDF (285 KB)  
    Freely Available from IEEE
  • Space-Charge-Limited Currents in Resin Films [Letter to the Editor]

    Publication Year: 1960 , Page(s): 359 - 363
    Cited by:  Papers (1)
    PDF file iconPDF (467 KB)  
    Freely Available from IEEE
  • A Cyclic Code for Double Error Correction [Letter to the Editor]

    Publication Year: 1960 , Page(s): 364 - 366
    Cited by:  Papers (10)
    PDF file iconPDF (430 KB)  
    Freely Available from IEEE
  • IBM Technical Papers Published in Other Journals

    Publication Year: 1960 , Page(s): 367 - 373
    PDF file iconPDF (1029 KB)  
    Freely Available from IEEE
  • Recent IBM Patents

    Publication Year: 1960 , Page(s): 374
    PDF file iconPDF (189 KB)  
    Freely Available from IEEE
  • Authors

    Publication Year: 1960 , Page(s): 375 - 376
    PDF file iconPDF (294 KB)  
    Freely Available from IEEE

Aims & Scope

The IBM Journal of Research and Development is a peer-reviewed technical journal, published bimonthly, which features the work of authors in the science, technology and engineering of information systems.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Clifford A. Pickover
IBM T. J. Watson Research Center