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IBM Journal of Research and Development

Issue 5 • Date Nov. 1964

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Displaying Results 1 - 14 of 14
  • A Statistical Approach to the Design of Diffused Junction Transistors

    Publication Year: 1964, Page(s):482 - 495
    Cited by:  Papers (12)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (736 KB)

    Monte Carlo methods of statistical analysis are applied to the problems of transistor design and optimization. The experimental tolerances associated with any diffusion process are shown to represent an important factor in the initial design of diffused junction transistors. Many transistor parameters exhibit a substantial degree of sensitivity to small variations in the diffusion process. This is... View full abstract»

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  • Calculation of the Capacitance of a Semiconductor Surface, with Application to Silicon

    Publication Year: 1964, Page(s):496 - 505
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (562 KB)

    The electrostatic problem of finding the surface capacitance of a plane semiconductor surface as a function of applied voltage is formulated and solved. The solution takes account of the space charge distribution in the semiconductor, of a surface dielectric layer, of the possible presence of surface states, and of the exact Fermi-Dirac statistics for the charge carriers. The macroscopic electrost... View full abstract»

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  • Design of ACP Tunnel-Diode-Coupled Circuits

    Publication Year: 1964, Page(s):506 - 514
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (523 KB)

    The performance of the Advanced Circuit Program (ACP) circuits described by D. H. Chung and J. A. Palmieri can be improved by replacing the coupling resistor with a pair of tunnel diodes. The low impedance and power gain properties of the tunnel diode increase the fan-power and provide better control of signal levels. In addition, the improved rise times increase circuit speeds to the extent that ... View full abstract»

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  • Computer Analysis of Electron Paramagnetic Resonance Spectra

    Publication Year: 1964, Page(s):515 - 526
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (715 KB)

    Algebraic methods that are useful in the reduction of EPR spectra to the magnetic parameters in the phenomenological Hamiltonian are summarized and programs presently available to accomplish the necessary computations are described. Among the topics discussed are (i) the calculation of the spectrum of the complete spin Hamiltonian for single-crystal experiments, with the principal axis system; (ii... View full abstract»

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  • Glass-Passivated GaAs Chip Tunnel Diode

    Publication Year: 1964, Page(s):527 - 531
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (458 KB)

    A novel approach to the fabrication of tunnel diodes described. The experimental tunnel diode is a gallium arsenide planar device, using a conventional alloyed junction in an epitaxially grown GaAs substrate, and hermetically sealed by a high-temperature glass coating. The tunnel diode is fused to a circuit module using a solder reflow method. This package provides a high degree of mechanical reli... View full abstract»

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  • Thermal Limitations on the Energy of a Single Injection Laser Light Pulse

    Publication Year: 1964, Page(s):532 - 536
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (421 KB)

    The upper limits on the output pulse power of an injection laser arising from heating effects are estimated. The heat is assumed to be dissipated by conduction through a large homogeneous body. A simple method for computing over-all diode efficiency is given. View full abstract»

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  • Derivation of Maximal Compatibles Using Boolean Algebra

    Publication Year: 1964, Page(s):537 - 538
    Cited by:  Papers (11)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (254 KB)

    Given an incompletely specified flow table for a sequential switching function, it is desired to minimize the number of rows in that flow table, i.e., to find an equivalent minimum-row flow table. Paull and Unger1 have discussed this problem in detail View full abstract»

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  • Negative Resistance Tunnel Diodes in Silicon Carbide

    Publication Year: 1964, Page(s):539 - 542
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (373 KB)

    Although rectifying p-n junctions in silicon carbide have been known for a long time, great difficulties have been encountered in constructing useful active devices in this material. This communication describes an active device operable at temperatures as high as 500°C and consisting of a tunnel diode p-n junction1 formed by alloying Si to crystals of very heavily doped p-type h... View full abstract»

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  • High Power CW Operation of GaAs Injection Lasers at 77° K

    Publication Year: 1964, Page(s):543 - 544
    Cited by:  Papers (12)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (291 KB)

    Continuous-wave operation of GaAs injection lasers depends critically upon the junction temperature1,2 which, in turn, depends critically upon the heat flow from the laser body.3,4 There are two instances in thel iterature in which continuous operation at 77° K was achieved at very low output power levels. In one, both mirror-ends of a Fabry-Perot... View full abstract»

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  • Continuous Microwave Oscillations of Current in GaAs

    Publication Year: 1964, Page(s):545 - 546
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (279 KB)

    Previous work1 has shown that microwave oscillations can be generated by applying a strong electric field to a semiconductor such as n-type GaAs or InP. The results obtained by using extremely short pulses with low duty cycle were sufficiently promising to make it worthwhile, by appropriate thermal design of the specimen, to explore the possibility of obtaining greater average power or ... View full abstract»

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  • Technical Papers by IBM Authors Published Recently in Other Journals

    Publication Year: 1964, Page(s):547 - 562
    IEEE is not the copyright holder of this material | PDF file iconPDF (910 KB)
    Freely Available from IEEE
  • Recent IBM Patents

    Publication Year: 1964, Page(s):563 - 565
    IEEE is not the copyright holder of this material | PDF file iconPDF (268 KB)
    Freely Available from IEEE
  • Authors

    Publication Year: 1964, Page(s):566 - 567
    IEEE is not the copyright holder of this material | PDF file iconPDF (222 KB)
    Freely Available from IEEE
  • Contents of previous two issues

    Publication Year: 1964, Page(s): 568
    IEEE is not the copyright holder of this material | PDF file iconPDF (231 KB)
    Freely Available from IEEE

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The IBM Journal of Research and Development is a peer-reviewed technical journal, published bimonthly, which features the work of authors in the science, technology and engineering of information systems.

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Editor-in-Chief
Clifford A. Pickover
IBM T. J. Watson Research Center