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IBM Journal of Research and Development

Issue 4 • Sept. 1964

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Displaying Results 1 - 18 of 18
  • Surface Effects on Silicon: Introduction

    Publication Year: 1964, Page(s):366 - 367
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (251 KB)

    As early as 1948, Shockley and Pearson1 showed that the conductivity of an evaporated germanium film could be modulated by means of an electric field applied normal to the surface. One surprising result of this work was that only about 10% of the charge induced by the field contributed to the conductivity. The reason for this discrepancy was explained by J. Bardeen as being due to the p... View full abstract»

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  • Space-Charge Model for Surface Potential Shifts in Silicon Passivated with Thin Insulating Layers

    Publication Year: 1964, Page(s):368 - 375
    Cited by:  Papers (13)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (468 KB)

    Semipermanent changes in the semiconductor surface potential occur in insulator-covered semiconductors when external fields are applied for long times, particularly at elevated temperatures. An attempt to explain these changes in terms of the charging and discharging of interface states leads to conclusions that disagree with many of the experimental facts. Specifically, the semipermanent effects ... View full abstract»

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  • Stabilization of SiO2 Passivation Layers with P2O5

    Publication Year: 1964, Page(s):376 - 384
    Cited by:  Papers (26)  |  Patents (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (552 KB)

    Measurements are reported on the stability of planar, npn silicon transistors with and without a phosphosilicate glass layer over the SiO2 passivation layer. The phosphosilicate layer forms during the emitter diffusion from a P2O5 source, and the data show that, to insure stability, it must not be removed in subsequent processing steps. The units tested were of con... View full abstract»

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  • Effect of Temperature and Bias on Glass-Silicon Interfaces

    Publication Year: 1964, Page(s):385 - 393
    Cited by:  Papers (4)  |  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (520 KB)

    New technologies for deposition of thin glass films on silicon substrates have generated interest in the resulting glass-silicon interface potentials and the interface stability under conditions of bias and temperature that might be experienced in device operation. Experiments are described which show accumulation of space-charge layers at glass-silicon interfaces under combined conditions of elec... View full abstract»

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  • Electrode Control of SiO2 Passivated Planar Junctions

    Publication Year: 1964, Page(s):394 - 399
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (486 KB)

    Electric fields have been applied to the surface over a planar silicon junction by means of a metallic control-ring electrode on the oxide surface. Capacitance measurements have indicated that a large, positive, immobile charge is present at or near the interface between the silicon dioxide and the silicon. An improvement in breakdown voltage occurs when the control ring is biased negatively, prod... View full abstract»

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  • Electrochemical Phenomena in Thin Films of Silicon Dioxide on Silicon

    Publication Year: 1964, Page(s):400 - 409
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (598 KB)

    A study has been made of the effect of chemical additives and of annealing and electrical biasing procedures upon the state of charge of silica films grown on silicon. A model, proposed to account for the observations, is based on the assumption that phosphorus, aluminum, and boron, when present, substitute for Si in SiO2. The resulting species may be represented as PO2... View full abstract»

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  • Carrier Surface Scattering in Silicon Inversion Layers

    Publication Year: 1964, Page(s):410 - 415
    Cited by:  Papers (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (355 KB)

    The field effect surface-channel conductance and transconductance of both p-type and n-type Si inversion layers were measured as a function of external field. In the small signal region, the channel conductance was found to vary logarithmically with the transverse field. The results are interpreted in terms of reduction of carrier mobility that is due to surface scattering. A model which consists ... View full abstract»

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  • Effect of Low Temperature Annealing on the Surface Conductivity of Si in the Si-SiO2-Al System

    Publication Year: 1964, Page(s):416 - 421
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (475 KB)

    Studies on insulated-gate field effect devices fabricated on both n- and p-type Si have shown the existence of inversion layers on p-type surfaces and of accumulation layers on n-type surfaces. The degree of inversion or accumulation was characterized by measuring the total series capacity of the SiO2 gate and the underlying Si as a function of an applied dc potential. The initial surfa... View full abstract»

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  • Chemical and Ambient Effects on Surface Conduction in Passivated Silicon Semiconductors

    Publication Year: 1964, Page(s):422 - 426
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (357 KB)

    The effect of processing variables on the surface conduction properties of passivated silicon junction devices has been studied. Insulated gate field-effect transistors fabricated in p-type silicon were used as an experimental tool. Varying the metal used as the gate electrode is shown to strongly influence the surface conductivity of the field-effect device. The effects of heat treatments in vari... View full abstract»

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  • Hall Measurements on Silicon Field Effect Transistor Structures

    Publication Year: 1964, Page(s):427 - 429
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (297 KB)

    In the range of fields used, it seems well established that trapping does not play a major role in these n-p-n field effect devices. This range was extensive enough to indicate that there was no high density of states in the gap from 0.3 eV below the conduction band edge to 0.125 eV below the conduction band edge. Hence, in this range for samples so prepared, the transconductance may be used to st... View full abstract»

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  • Velocity of Sound in a Many-Valley Conductor

    Publication Year: 1964, Page(s):430 - 434
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (373 KB)

    The effect on the velocity of sound corresponding to the “Keyes effect,” for nonzero frequency and finite wavelength, is calculated by means of the electron Boltzmann equation. The result may be expressed as an effective electronic contribution to the elastic constant; the deviation, χdK0 of δK from the Keyes electronic contribution to the elastic ... View full abstract»

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  • Displacement Discontinuity over a Transversely Isotropic Elastic Half-Space

    Publication Year: 1964, Page(s):435 - 442
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (528 KB)

    The paper presents a solution to the elasticity problem where the discontinuity is in the displacement component parallel to the plane area inside the transversely isotropic medium. The work previously performed on discontinuity problems is also discussed. View full abstract»

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  • The Design of Transformer (Dimond Ring) Read-Only Stores

    Publication Year: 1964, Page(s):443 - 459
    Cited by:  Papers (4)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (956 KB)

    The operation of transformer read-only stores is explained and the main methods of construction described. The optimum turns ratio of the transformers is calculated. It is shown how a transformer can produce an output current even though the energised word line is not threaded through it. The value of this zero current depends on the information pattern and is found to be greatest with one of two ... View full abstract»

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  • The Equilibrium Behavior of the Silicon-Hydrogen-Chlorine System

    Publication Year: 1964, Page(s):460 - 465
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (384 KB)

    The composition of the gas phase is calculated for various temperatures, pressures, and chlorine-to-hydrogen ratios for the two-phase system consisting of solid silicon in equilibrium with the gas phase. It is shown that in the range of variables most frequently used for vapor growth of silicon, the principal species under equilibrium conditions are H2, HCl, SiHCl3, and SiCl... View full abstract»

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  • Stability Criteria for Large Networks

    Publication Year: 1964, Page(s):466 - 470
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (364 KB)

    An arbitrarily large network of bistable tunnel diode switching circuits is analyzed for stability. One condition derived indicates that increasing the total “fan” of each circuit might tend to make the whole network unstable. This condition is independent of the tunnel-diode characteristic. Another condition is also derived which depends on this characteristic but does not involve t... View full abstract»

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  • Mutually Quenched Injection Lasers as Bistable Devices

    Publication Year: 1964, Page(s):471 - 475
    Cited by:  Papers (10)  |  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (369 KB)

    The optical interaction of lasers attracts widespread interest for a number of reasons, a prominent one being the possibility that logic or memory systems using optically coupled elements may some day be realized. The quenching of one laser by the coherent light of another has been observed for GaAs injection lasers1 and for neodymium glass lasers.2 When the coherent output o... View full abstract»

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  • Recent IBM Patents

    Publication Year: 1964, Page(s):476 - 477
    IEEE is not the copyright holder of this material | PDF file iconPDF (230 KB)
    Freely Available from IEEE
  • Authors

    Publication Year: 1964, Page(s):478 - 480
    IEEE is not the copyright holder of this material | PDF file iconPDF (225 KB)
    Freely Available from IEEE

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IBM T. J. Watson Research Center