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IBM Journal of Research and Development

Issue 6 • Date Nov. 1966

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Displaying Results 1 - 10 of 10
  • Gallium Arsenide Planar Technology

    Publication Year: 1966 , Page(s): 438 - 445
    Cited by:  Papers (3)
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (569 KB)  

    Some of the main problems of the gallium arsenide planar technology are discussed. The most suitable starting material used has been obtained by vapor growth. Methods of zinc and tin diffusion have been studied in connection with masking by pyrolytic SiO2/P2O5 layers. An alternative technique using doped silicon dioxide for the production of planar devices has been... View full abstract»

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  • Dislocation-Induced Deviation of Phosphorus-Diffusion Profiles in Silicon

    Publication Year: 1966 , Page(s): 446 - 454
    Cited by:  Papers (1)
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (518 KB)  

    Deviation of phosphorus-impurity profiles in silicon from ideal ones under the diffusion condition of high surface concentrations is well known. Diffusion of high concentrations of phosphorus is also known to cause generation of dislocations with edge character in silicon wafer surfaces. A major cause of the deviation of the phosphorus profile is shown to be solute accumulation at these dislocatio... View full abstract»

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  • The Integrated Vocoder and its Application in Computer Systems

    Publication Year: 1966 , Page(s): 455 - 461
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (558 KB)  

    This paper reviews the conceptual features and the applications of the integrated vocoder. In a comparison with the structural properties of the channel vocoder and other experimental types, the integrated vocoder is shown to be a technically simple solution to the well-known problems of pitch description and vocoder signal transmission. The design reduces the complexity of the over-all speech pro... View full abstract»

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  • New Methods for De Haas-Shubnikov Measurements

    Publication Year: 1966 , Page(s): 462 - 471
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (582 KB)  

    Improved techniques and instrumentation for observing the de Haas-Shubnikov (dHS) effect are described and preliminary results of their application to measurements on bismuth are presented. The two main features of the method are: first, the monotonic H2 term in the magnetoresistance is subtracted out, allowing increased amplification of the oscillatory part, and therefore increased sen... View full abstract»

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  • A Partial Error Analysis for the Solution of Differential Equations in Simulation: A Look at Fowler's z-Transform Root-Locus Method

    Publication Year: 1966 , Page(s): 472 - 476
    Cited by:  Papers (1)
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (391 KB)  

    A partial analysis is made of the types of error of Fowler's method, which uses the z-transform procedure for digital simulation of complex systems. View full abstract»

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  • In-situ Measurements of Magnetic Properties in Vacuum-Deposited Permalloy Films

    Publication Year: 1966 , Page(s): 477 - 483
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (473 KB)  

    The quasi-static magnetic properties of vacuum-deposited Permalloy films of zero-magnetostrictive composition are examined in situ in an evaporator equipped with a laser-operated Kerr magneto-optic hysteresigraph. The coercive force, which depends strongly upon the film thickness, is large (Hc > 20 Oe) when the hysteresis loop is first observable with a thickness of ∼50 &#... View full abstract»

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  • Electron Barriers in Al-Al2O3-SnTe and Al-Al2O3-GeTe Tunnel Junctions

    Publication Year: 1966 , Page(s): 484 - 486
    Save to Project icon | Click to expandAbstract | PDF file iconPDF (272 KB)  

    The tunneling characteristics of junctions consisting of two normal metals separated by a thin insulating film have been analyzed theoretically,1,2 and the main features of the analyses have been corroborated by extensive experimental studies. On the other hand, relatively little attention has been given to junctions in which one of the metals is replaced by a semiconductor.... View full abstract»

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  • Technical Papers by IBM Authors Published Recently in Other Journals

    Publication Year: 1966 , Page(s): 487 - 497
    Save to Project icon | PDF file iconPDF (636 KB)  
    Freely Available from IEEE
  • Recent Issued Patents Assigned to IBM

    Publication Year: 1966 , Page(s): 498 - 499
    Save to Project icon | PDF file iconPDF (230 KB)  
    Freely Available from IEEE
  • Authors

    Publication Year: 1966 , Page(s): 500
    Save to Project icon | PDF file iconPDF (231 KB)  
    Freely Available from IEEE

Aims & Scope

The IBM Journal of Research and Development is a peer-reviewed technical journal, published bimonthly, which features the work of authors in the science, technology and engineering of information systems.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Clifford A. Pickover
IBM T. J. Watson Research Center