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IBM Journal of Research and Development

Issue 2 • March 1970

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Displaying Results 1 - 17 of 17
  • Dynamic Performance of Schottky-barrier Field-effect Transistors

    Publication Year: 1970, Page(s):82 - 94
    Cited by:  Papers (29)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1005 KB)

    The dynamic performance of Schottky-barrier field-effect transistors is discussed, with the aim of finding in a most simple way the physical parameters on which the dynamic properties of a FET depend, how strong they influence the dynamic qualities of FET's, and what recommendations can be given as to proper choice of material or structure for FET's with good high-frequency performance. View full abstract»

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  • Computer Aided Two-dimensional Analysis of the Junction Field-effect Transistor

    Publication Year: 1970, Page(s):95 - 116
    Cited by:  Papers (58)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1613 KB)

    A two-dimensional analysis is presented of the mechanisms of operation for a junction field-effect transistor. Particular emphasis is placed upon the process of electric current saturation in both wide gate and narrow gate structures. It is shown that velocity saturated carrier transport in a source-drain channel produces heretofore unreported mechanisms of device operation. Comparisons made betwe... View full abstract»

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  • Projection Masking, Thin Photoresist Layers and Interference Effects

    Publication Year: 1970, Page(s):117 - 124
    Cited by:  Papers (19)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (740 KB)

    Projection masking is used for producing microwave semiconductor devices with micrometer or submicrometer structures. In contrast to contact masking, the mask is projected onto the silicon wafer by means of a high quality microscope objective. Since the chromatic errors of such a lens cannot be fully corrected, monochromatic light has to be employed. This, however, causes standing light waves to o... View full abstract»

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  • Microwave Properties of Schottky-barrier Field-effect Transistors

    Publication Year: 1970, Page(s):125 - 141
    Cited by:  Papers (92)  |  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1432 KB)

    The microwave properties of silicon Schottky-barrier field-effect transistors (MESFET's) with a gate-length of one micrometer are investigated. The scattering parameters of the transistors have been measured from 0.1 GHz up to 12 GHz. From the measured data an equivalent circuit is established which consists of an intrinsic transistor and extrinsic elements. Some of the elements of the intrinsic t... View full abstract»

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  • Silicon and Silicon-dioxide Processing for High-frequency MESFET Preparation

    Publication Year: 1970, Page(s):142 - 147
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (602 KB)

    Silicon wafer processing is described which provides submicrometer epitaxial layers on top of high-resistivity silicon substrates for fabrication of high-frequency metal-semiconductor field-effect transistors. Silicon-dioxide underetching at the border of an oxide window, performed in hydrogen at elevated temperatures, is one method of realizing 1-micrometer device structures. View full abstract»

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  • Metallization Processes in Fabrication of Schottky-barrier FET's

    Publication Year: 1970, Page(s):148 - 151
    Cited by:  Papers (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (473 KB)

    The metallization processes necessary for the production of microwave Schottky-barrier field-effect transistors are described. Since the gate contact is only 1 micrometer wide, the holes and the metallization of the source, drain and gate contacts are produced simultaneously. Then in a subsequent process, the source and drain contacts are converted to ohmic contacts by the evaporation of Au-Sb ont... View full abstract»

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  • Minimal Energy Dissipation in Logic

    Publication Year: 1970, Page(s):152 - 157
    Cited by:  Papers (53)  |  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (705 KB)

    Minimal energy dissipations for the logic process based on thermodynamics and general phase space considerations are known. The actual availability of these minimal dissipations has not, however, been demonstrated. These minimal dissipation sources in a computing system also act as noise sources and thereby lead to questions about the ultimate available reliability of the computing process. A new ... View full abstract»

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  • Thermal Problems of the Pulsed Injection Laser

    Publication Year: 1970, Page(s):158 - 167
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (877 KB)

    Heat is produced in short periods of time during pulsed operation of an injection laser. The temperature of the laser at the beginning of any pulse due to the heating caused by preceding pulses is calculated for several simple model cases. The results are applied in the description of performance deterioration caused by heating. View full abstract»

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  • Application of RF Discharges to Sputtering

    Publication Year: 1970, Page(s):168 - 171
    Cited by:  Papers (14)  |  Patents (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (506 KB)

    The operation of rf discharges is described and the internal distribution of voltages is considered. The significance of this with respect to sputtering, particularly of insulators, is then discussed. An equivalent circuit for the discharge is presented and the influence of such parameters as pressure and magnetic field on the components of this circuit is described. Finally, energy distributions ... View full abstract»

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  • Control of RF Sputtered Film Properties Through Substrate Tuning

    Publication Year: 1970, Page(s):172 - 175
    Cited by:  Papers (5)  |  Patents (9)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (450 KB)

    A means has been found to control the rf potential of the substrate during rf sputtering. The application of this technique to the deposition of silica films has been investigated in detail. The technique can be described as the use of an adjustable rf impedance between the substrate holder and ground electrodes, which generates an rf potential by virtue of the flow of rf current through it. Adjus... View full abstract»

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  • Re-emission of Sputtered SiO[2] During Growth and Its Relation to Film Quality

    Publication Year: 1970, Page(s):176 - 181
    Cited by:  Papers (4)  |  Patents (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (653 KB)

    An improved technique for measuring re-emission coefficients is described and data on the effect of temperature are presented. These are discussed in the light of a physical model of film growth during sputtering wherein constant re-emission of material throughout deposition occurs. Evidence is then presented that such re-emission is essential if films of high quality are to be obtained. To help a... View full abstract»

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  • Metal Edge Coverage and Control of Charge Accumulation in RF Sputtered Insulators

    Publication Year: 1970, Page(s):182 - 191
    Cited by:  Papers (7)  |  Patents (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1184 KB)

    The successful application of rf sputtered SiO2 in the passivation of silicon semiconductor devices depends in part on the proper control of ionic charge migration in the insulator during sputtering, and on the adequate coverage of metal line edges by the insulator. It is shown that an appropriate combination of target purity, substrate temperature control and phosphosilicate blocking l... View full abstract»

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  • Automatic Impedance Matching System for RF Sputtering

    Publication Year: 1970, Page(s):192 - 193
    Cited by:  Papers (1)  |  Patents (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (295 KB)

    A previously described' “L” type matching network used for rf sputtering is shown here as part of Fig. 1. The purpose of the network is to transform the complex impedance of a sputtering system to a purely resistive value of 50 Ω. This makes possible the use of a transmission line with a characteristic impedance of 50 for the conveyance of rf power to the system. The rf power ... View full abstract»

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  • Recent Papers by IBM Authors

    Publication Year: 1970, Page(s):194 - 198
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (582 KB)

    Reprints of the papers listed here may usually be obtained most efficiently by writing directly to the authors. The authors' IBM divisions and locations are identified as follows: ASDD is the Advanced Systems Development Division; CD, Components Division; DPD, Data Processing Division; FSD, Federal Systems Division; RES, Research Division; SDD, Systems Development Division; and SMD, Systems Manufa... View full abstract»

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  • Patents Recently Issued to IBM Inventors

    Publication Year: 1970, Page(s):199 - 201
    IEEE is not the copyright holder of this material | PDF file iconPDF (316 KB)
    Freely Available from IEEE
  • Authors

    Publication Year: 1970, Page(s):202 - 203
    IEEE is not the copyright holder of this material | PDF file iconPDF (330 KB)
    Freely Available from IEEE
  • Contents of previous two issues

    Publication Year: 1970, Page(s): 204
    IEEE is not the copyright holder of this material | PDF file iconPDF (190 KB)
    Freely Available from IEEE

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IBM T. J. Watson Research Center