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IBM Journal of Research and Development

Issue 6 • Date Nov. 1971

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Displaying Results 1 - 16 of 16
  • A Self-Isolation Scheme for Integrated Circuits

    Publication Year: 1971, Page(s):430 - 435
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (551 KB)

    A self-isolation scheme is proposed for fabricating transistors in semiconductor integrated circuits. Such integrated circuits with double-diffused transistors require three diffusions and one epitaxial layer in the proposed process. Since no isolation or reach-through diffusions are involved, this technique could reduce the area of a memory or logic cell by 50% or more. View full abstract»

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  • Design and Development of an Ultralow-Capacitance, High-Performance Pedestal Transistor

    Publication Year: 1971, Page(s):436 - 441
    Cited by:  Papers (7)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (481 KB)

    High-performance transistors with small geometries require a highly doped collector region to produce a large impurity gradient at the collector-base junction. This allows the structure to sustain high current densities and to attain low collector series resistance. However, the resulting increase in collector transition capacitance degrades the ac characteristics of the transistors. A structure i... View full abstract»

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  • Planar Mesa Schottky Barrier Diode

    Publication Year: 1971, Page(s):442 - 445
    Cited by:  Papers (2)  |  Patents (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (371 KB)

    Planar silicon technology has been used to fabricate mesa Schottky barrier diodes with high breakdown voltages. This method proves to be superior to alternate methods used to increase the breakdown voltage of Schottky diodes. The processing techniques and characteristics of mesa Schottky diodes are described in this paper. View full abstract»

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  • Electron Beam Fabrication of Micron Transistors

    Publication Year: 1971, Page(s):446 - 451
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (549 KB)

    For high-speed performance as well as high packing density, it is desirable to make the components in integrated circuits as small as possible. One of the fundamental problems in making smaller components is that of limitations in the optical technology. This paper describes an experimental process and the results obtained by using an electron-optical system to fabricate small transistors. Planar ... View full abstract»

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  • Experimental Evaluation of High Energy Ion Implantation Gradients for Possible Fabrication of a Transistor Pedestal Collector

    Publication Year: 1971, Page(s):452 - 456
    Cited by:  Papers (5)  |  Patents (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (465 KB)

    The use of ion accelerators to implant impurities in crystals has become the subject of widespread research. Such studies have been limited mainly to low energies with acceleration voltages of 50 to 500 kilovolts. In this energy range, impurities are implanted into the upper micron or less of the surface. View full abstract»

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  • An Arsenic Emitter Structure for High-Performance Silicon Transistors

    Publication Year: 1971, Page(s):457 - 463
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (565 KB)

    Arsenic-doped emitters have been shown to produce high performance in bipolar silicon transistors. In comparison with phosphorus, the emitter dopant commonly used in the industry, the use of arsenic results in a steeper gradient (1024/cm4), less compensation of the base region, no “emitter dip” effect, and a flatter profile with higher sheet conductivity. Since ... View full abstract»

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  • Arsenic Source Vapor Pressure Kinetics and Capsule Diffusion

    Publication Year: 1971, Page(s):464 - 471
    Cited by:  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (613 KB)

    After diffusion temperature and time, the most important parameters in capsule diffusion source behavior are the dopant vapor pressure characteristics in the capsule. The vapor pressure behavior is a function of the degree of homogenization of the Si-dopant system and hence of the source preparation technology. Various methods of preparing Si-As source material are discussed. Homogenized-source pr... View full abstract»

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  • A Diffusion Model for Arsenic in Silicon

    Publication Year: 1971, Page(s):472 - 476
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (360 KB)

    It is proposed that double acceptor-level vacancies are responsible for arsenic diffusion into silicon. A computer program, which combines this diffusion mechanism with the formation of arsenic clusters and an internal electric field induced by the impurity gradient, is used to calculate arsenic diffusion profiles in wide ranges of diffusion temperatures and surface impurity concentrations. The ca... View full abstract»

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  • On the Relationship of Resistivity to Arsenic Concentration for Heavily Doped n-type Silicon [Letter to the Editor]

    Publication Year: 1971, Page(s): 477
    IEEE is not the copyright holder of this material | PDF file iconPDF (245 KB)
    Freely Available from IEEE
  • Numerical Calculation of Magnetic Fields in the Vicinity of a Magnetic Body

    Publication Year: 1971, Page(s):478 - 482
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (481 KB)

    Static magnetic fields, resulting from an applied field, are calculated in the vicinity of a magnetic body. Specifically, numerical results are given for a rectangular body of constant permeability. The reduction or shielding of the magnetic fields is calculated in the neighborhood of the body. Integral equations are developed which can be solved numerically on a computer. Typical fields are descr... View full abstract»

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  • Recent Papers by IBM Authors

    Publication Year: 1971, Page(s):483 - 485
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (375 KB)

    Reprints of the papers listed here may usually be obtained most efficiently by writing directly to the authors. The authors' IBM divisions and locations are identified as follows: ASDD is the Advanced Systems Development Division; CD, Components Division; DPD, Data Processing Division; FED, Field Engineering Division; FSD, Federal Systems Division; GSD, General Systems Division; OPD, Ofice Product... View full abstract»

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  • Patents Recently Issued to IBM Inventors

    Publication Year: 1971, Page(s):486 - 489
    IEEE is not the copyright holder of this material | PDF file iconPDF (387 KB)
    Freely Available from IEEE
  • Authors

    Publication Year: 1971, Page(s):490 - 492
    IEEE is not the copyright holder of this material | PDF file iconPDF (389 KB)
    Freely Available from IEEE
  • Author Index for Papers in Volume 15

    Publication Year: 1971, Page(s):493 - 494
    IEEE is not the copyright holder of this material | PDF file iconPDF (316 KB)
    Freely Available from IEEE
  • Subject Index for Papers in Volume 15

    Publication Year: 1971, Page(s):495 - 496
    IEEE is not the copyright holder of this material | PDF file iconPDF (279 KB)
    Freely Available from IEEE
  • Contents of previous issues in Volume 15

    Publication Year: 1971, Page(s):497 - 501
    IEEE is not the copyright holder of this material | PDF file iconPDF (307 KB)
    Freely Available from IEEE

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The IBM Journal of Research and Development is a peer-reviewed technical journal, published bimonthly, which features the work of authors in the science, technology and engineering of information systems.

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Clifford A. Pickover
IBM T. J. Watson Research Center