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IBM Journal of Research and Development

Issue 3 • Date May 1988

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Displaying Results 1 - 12 of 12
  • Preface

    Publication Year: 1988, Page(s):304 - 305
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (249 KB)

    This issue of the IBM Journal of Research and Development is devoted to the scientific aspects of electron transport in small structures. The articles contained here reflect only some of the current research interests and are not intended to be a comprehensive survey of all the scientific contributions that have been made to the field of very small structures. The July issue of the Journal will hi... View full abstract»

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  • Spatial variation of currents and fields due to localized scatterers in metallic conduction

    Publication Year: 1988, Page(s):306 - 316
    Cited by:  Papers (6)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1121 KB)

    Volume 1 of this journal, thirty-one years ago, included a paper with the above title. Studies of small samples, in recent years, as well as earlier work on disordered samples, have caused some of the content of the earlier work to become widely understood. The aspects stressed in the title, however, relating to the spatial variations in the vicinity of a localized scattering center, have received... View full abstract»

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  • Symmetry of electrical conduction

    Publication Year: 1988, Page(s):317 - 334
    Cited by:  Papers (15)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1579 KB)

    The resistance of a conductor measured in a four-probe setup is invariant if the exchange of the voltage and current sources is accompanied by a magnetic field reversal. We present a derivation of this theorem. The reciprocity of the resistances is linked directly to the microscopic reciprocity of the S-matrix, which describes reflection at the sample and transmission through the sample. We demons... View full abstract»

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  • Fluctuations in the extrinsic conductivity of disordered metal

    Publication Year: 1988, Page(s):335 - 346
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1100 KB)

    Random fluctuations of the electrical conductance are ubiquitous in small (typical dimension L ≲ 1 µm) metallic samples at low temperatures (typically T ≲ 1K ≃ 0.09 meV). The fluctuations result from the quantum-mechanical interference of the carrier wavefunctions. The superpositions of the wavefunctions depend randomly on the placement of impurities, on magnetic field,... View full abstract»

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  • Mesoscopic coherence phenomena in semiconductor devices

    Publication Year: 1988, Page(s):347 - 358
    Cited by:  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1082 KB)

    Semiconductor devices have several attractive properties which make them useful in the study of electronic coherence phenomena such as universal conductance fluctuations. The use of gated devices allows the Fermi level, and thus the electronic wavelength, to be adjusted in order to study energy correlation effects. The two-dimensional electron gas formed beneath the gate can be tilted with respect... View full abstract»

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  • Isolated rings of mesoscopic dimensions. Quantum coherence and persistent currents

    Publication Year: 1988, Page(s):359 - 371
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1095 KB)

    Persistent currents in small nonsuperconducting rings threaded by a magnetic flux are a manifestation of novel quantum effects in submicron systems. We present theoretical results for one-channel and multichannel systems concerning the dependence of the current amplitude on the number of channels and geometry, temperature, and degree of disorder. Inelastic scattering is considered for one-channel ... View full abstract»

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  • Electronic transport in small strongly localized structures

    Publication Year: 1988, Page(s):372 - 383
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1091 KB)

    We review some recent results on the low-temperature transport properties (T < 4K) of very small silicon metal-oxide field-effect transistors in the insulating regime of conduction. Our devices are lithographically patterned to have widths as small as 0.05 µm and lengths as short as 0.06 µm. These small transistors exhibit new and unexpected sample-specific fluctuation behavi... View full abstract»

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  • What is measured when you measure a resistance?—The Landauer formula revisited

    Publication Year: 1988, Page(s):384 - 413
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (2300 KB)

    We re-examine the question of what constitutes the physically relevant quantum-mechanical expression for the resistance of a disordered conductor in light of recent experimental and theoretical advances in our understanding of the conducting properties of mesoscopic systems. It is shown that in the absence of a magnetic field, the formula proposed by Büttiker, which expresses the current re... View full abstract»

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  • Scanning tunneling measurements of potential steps at grain boundaries in the presence of current flow

    Publication Year: 1988, Page(s):414 - 418
    Cited by:  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (469 KB)

    We have used a new technique to simultaneously measure the surface topography and surface potential of current-carrying polycrystalline Au60Pd40 thin films using a scanning tunneling microscope. We find abrupt steps in the surface potential due to scattering from grain boundaries in these films. View full abstract»

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  • Recent publications by IBM authors

    Publication Year: 1988, Page(s):419 - 433
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1319 KB)

    The information listed here is supplied by the Institute for Scientific Information and other outside sources. Reprints of the papers may be obtained by writing directly to the first author cited. Information on books may be obtained by writing the publisher. Papers and books are listed alphabetically by author. View full abstract»

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  • Recent IBM patents

    Publication Year: 1988, Page(s):434 - 436
    IEEE is not the copyright holder of this material | PDF file iconPDF (193 KB)
    Freely Available from IEEE
  • Errata

    Publication Year: 1988, Page(s): 437
    IEEE is not the copyright holder of this material | PDF file iconPDF (82 KB)
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The IBM Journal of Research and Development is a peer-reviewed technical journal, published bimonthly, which features the work of authors in the science, technology and engineering of information systems.

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Editor-in-Chief
Clifford A. Pickover
IBM T. J. Watson Research Center