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IBM Journal of Research and Development

Issue 1.2 • Jan. 1999

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Displaying Results 1 - 14 of 14
  • Preface

    Publication Year: 1999, Page(s):3 - 4
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (160 KB)

    Plasma etching and deposition processes play a critical role in the production of high-density, high-performance microelectronic products. Generally, their underlying mechanisms consist of plasma-phase chemical reactions, particle transport, and surface reactions. Either one can dominate, depending on whether conditions are chosen to favor etching, deposition, or a combination of both. Each is a n... View full abstract»

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  • Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits

    Publication Year: 1999, Page(s):5 - 38
    Cited by:  Papers (8)  |  Patents (18)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (2837 KB)

    Plasma-assisted deposition of thin films is widely used in microelectronic circuit manufacturing. Materials deposited include conductors such as tungsten, copper, aluminum, transition-metal silicides, and refractory metals, semiconductors such as gallium arsenide, epitaxial and polycrystalline silicon, and dielectrics such as silicon oxide, silicon nitride, and silicon oxynitride. This paper revie... View full abstract»

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  • Plasma-etching processes for ULSI semiconductor circuits

    Publication Year: 1999, Page(s):39 - 72
    Cited by:  Papers (6)  |  Patents (39)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (3102 KB)

    An overview is presented of plasma-etching processes used in the fabrication of ULSI (ultralarge-scale integrated) semiconductor circuits, with emphasis on work in our facilities. Such circuits contain structures having minimum pattern widths of 0.25 µm and less. Challenges in plasma etching in evolving to such dimensions have come from the implementation of antireflective coatings and thin... View full abstract»

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  • Plasma processing in the fabrication of amorphous silicon thin-film-transistor arrays

    Publication Year: 1999, Page(s):73 - 88
    Cited by:  Papers (4)  |  Patents (8)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1336 KB)

    Plasma deposition and etching are two critical processes in the fabrication of the arrays of thin-film transistors (TFTs) in active-matrix liquid crystal displays. The processes fulfill three important production requirements: suitability for use at relatively low substrate temperatures, suitability for large substrates, and high throughput capability. We present an overview of our recent studies ... View full abstract»

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  • Fabrication of magnetic recording heads and dry etching of head materials

    Publication Year: 1999, Page(s):89 - 102
    Cited by:  Papers (1)  |  Patents (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1251 KB)

    The fabrication of magnetic recording heads is briefly described and compared with the fabrication of semiconductor integrated circuits. Relevant dry-etching processes are then reviewed. The processes include broad-beam ion etching, the primary dry-etching method used in recording-head manufacturing, and reactive ion etching, a promising process technique for future recording-head fabrication. For... View full abstract»

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  • Plasma processing damage in etching and deposition

    Publication Year: 1999, Page(s):103 - 107
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (338 KB)

    Plasma-based etching and deposition are key processes in macroelectronics and microelectronics. The energetic species, the time-changing magnetic fields, and the fluxes inherent in these processes give them their flexibility and functionality but also their potential for process damage. The basic causes of the damage are 1) process-induced current flow and 2) direct exposure to the plasma. The imp... View full abstract»

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  • High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits

    Publication Year: 1999, Page(s):109 - 126
    Cited by:  Papers (6)  |  Patents (35)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1749 KB)

    In this paper, we present and review recent developments in the high-density plasma chemical vapor deposition (HDP CVD) of silicon-based dielectric films, and of films of recent interest in the development of lower-dielectric-constant alternatives. Aspects relevant to the HDP CVD process and using the process to achieve interlevel insulation, gap filling, and planarization are discussed. Results o... View full abstract»

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  • Plasma-assisted oxidation, anodization, and nitridation of silicon

    Publication Year: 1999, Page(s):127 - 145
    Cited by:  Papers (4)  |  Patents (24)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1606 KB)

    Plasma-assisted oxidation, anodization, and nitridation of silicon have been performed in microwave, rf, and dc plasmas with a variety of reactor configurations and a range of plasma densities. Compared to thermal processes at equivalent substrate temperatures, film growth rates are accelerated by the plasma-enhanced generation of reactive chemical species or by the presence of electric fields to ... View full abstract»

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  • Plasma-deposited diamondlike carbon and related materials

    Publication Year: 1999, Page(s):147 - 162
    Cited by:  Papers (2)  |  Patents (22)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1261 KB)

    Diamondlike carbon (DLC) prepared by plasma-enhanced CVD is a metastable amorphous material characterized by attractive optical, electrical, chemical, and tribological properties. DLC films can be prepared at low temperatures from a large variety of precursors, and can be modified by the incorporation of different elements such as N, F, Si, or metals. The diversity of plasma conditions and precurs... View full abstract»

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  • Sputter deposition for semiconductor manufacturing

    Publication Year: 1999, Page(s):163 - 179
    Cited by:  Papers (4)  |  Patents (22)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1412 KB)

    Sputter deposition, also known as physical vapor deposition, or PVD, is a widely used technique for depositing thin metal layers on semiconductor wafers. These layers are used as diffusion barriers, adhesion or seed layers, primary conductors, antireflection coatings, and etch stops. With the progression toward finer topographical dimensions on wafers and increasing aspect ratios, the broad angula... View full abstract»

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  • Surface science issues in plasma etching

    Publication Year: 1999, Page(s):181 - 197
    Cited by:  Papers (2)  |  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1382 KB)

    Pattern transfer by plasma-based etching is one of several key processes required for fabricating silicon-based integrated circuits. We present a brief review of elementary plasma-etching processes on surfaces and within integrated-circuit microstructures—and an overview of recent work in our laboratory on plasma-etching aspects of the formation of self-aligned contacts to a polysilicon lay... View full abstract»

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  • Modeling and simulation methods for plasma processing

    Publication Year: 1999, Page(s):199 - 215
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1437 KB)

    Methods used for the modeling and numerical simulation of the plasma processes used in semiconductor integrated-circuit fabrication are reviewed. In the first part of the paper, we review continuum and kinetic methods. A model based on the drift-diffusion equations is presented as an example of a continuum model; the model and associated numerical solutions are discussed. The most widely used simu... View full abstract»

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  • Recent publications by IBM authors

    Publication Year: 1999, Page(s):217 - 226
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (746 KB)

    The information listed here is supplied by the Institute for Scientific Information and other outside sources. Reprints of the papers may be obtained by writing directly to the first author cited. Journals are listed alphabetically by title; papers are listed sequentially for each journal. View full abstract»

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  • Recent IBM patents

    Publication Year: 1999, Page(s):227 - 240
    IEEE is not the copyright holder of this material | PDF file iconPDF (905 KB)
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Clifford A. Pickover
IBM T. J. Watson Research Center