Issue 4.5 • Date July 2006
Filter Results
Displaying Results 1 - 15 of 15
-
Message
|
PDF (56 KB)
-
-
Silicon CMOS devices beyond scaling
|
PDF (964 KB)
-
-
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations
|
PDF (676 KB)
-
-
-
Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges
|
PDF (939 KB)
-
-
-
-
-
Ultralow-voltage, minimum-energy CMOS
|
PDF (677 KB)
-
Three-dimensional integrated circuits
|
PDF (790 KB)
-
Victim management in a cache hierarchy
|
PDF (482 KB)
Aims & Scope
The IBM Journal of Research and Development is a peer-reviewed technical journal, published bimonthly, which features the work of authors in the science, technology and engineering of information systems.
Meet Our Editors
Editor-in-Chief
John J. Ritsko
IBM T. J. Watson Research Center


