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Device and Materials Reliability, IEEE Transactions on

Issue 4 • Date Dec. 2009

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Displaying Results 1 - 18 of 18
  • [Front cover]

    Publication Year: 2009 , Page(s): C1
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  • IEEE Transactions on Device and Materials Reliability publication information

    Publication Year: 2009 , Page(s): C2
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  • Table of contents

    Publication Year: 2009 , Page(s): 505
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  • Kudos to our reviewers

    Publication Year: 2009 , Page(s): 506
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  • Changes to the Editorial Board

    Publication Year: 2009 , Page(s): 507
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  • Introduction to the Special Issue on the 2009 International Reliability Physics Symposium

    Publication Year: 2009 , Page(s): 508
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  • Integration Challenges of Nanoporous Low Dielectric Constant Materials

    Publication Year: 2009 , Page(s): 509 - 515
    Cited by:  Papers (3)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1041 KB) |  | HTML iconHTML  

    The reliable integration of nanoporous low dielectric constant (k) materials is challenging due to their vulnerability to delamination, cohesive cracking, and diffusion. We review selected reliability issues for the integration of nanoporous low-k dielectrics regarding UV curing, diffusion, and damage evolution. Depth-dependent UV curing by the UV standing wave effect is presented. I... View full abstract»

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  • Safe Operating Area Considerations for Integrated Trench-Based Power Devices

    Publication Year: 2009 , Page(s): 516 - 523
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1489 KB) |  | HTML iconHTML  

    This paper discusses the hot-carrier and electrical safe operating area (SOA) of trench-based integrated power devices. The hot-carrier SOA is determined by the avalanche current, exhibiting a maximum at intermediate drain voltage. The initial hot-carrier degradation is dependent on the crystal plane on which the gate oxide is grown. During hot-carrier stress, interface states are formed in the de... View full abstract»

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  • Process Integration Considerations for 300 mm TSV Manufacturing

    Publication Year: 2009 , Page(s): 524 - 528
    Cited by:  Papers (17)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (457 KB) |  | HTML iconHTML  

    Through-silicon via (TSV) will transition to high volume production when end-customer value (as exhibited by functionality, performance, form factor, etc.) are delivered at equivalent yield and cost. While this has been successfully achieved for CMOS image sensors (starting with 200 mm), significant work remains to be done in the TSV value chain (design-materials-process-packaging-test) in the com... View full abstract»

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  • Combined Nanoscale and Device-Level Degradation Analysis of \hbox {SiO}_{2} Layers of MOS Nonvolatile Memory Devices

    Publication Year: 2009 , Page(s): 529 - 536
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (725 KB) |  | HTML iconHTML  

    In this paper, the impact of an electrical stress applied on MOS structures with a 9.8-nm-thick SiO2 layer has been investigated at the device level and at the nanoscale with conductive atomic force microscopy (AFM). The goal is to correlate both kinds of measurements when studying the degradation and breakdown (BD) of tunnel oxides of nonvolatile memory devices. In particular, the gene... View full abstract»

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  • A Finite-Oxide Thickness-Based Analytical Model for Negative Bias Temperature Instability

    Publication Year: 2009 , Page(s): 537 - 556
    Cited by:  Papers (11)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1153 KB) |  | HTML iconHTML  

    Negative bias temperature instability (NBTI) in PMOS transistors has become a serious reliability concern in present-day digital circuit design. With continued technology scaling, and reducing oxide thickness, it has become imperative to accurately determine its effects on temporal circuit degradation, and thereby ensure reliable operation for a finite period of time. A reaction-diffusion (R-D)-ba... View full abstract»

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  • Accelerated Life Test for SiC Schottky Blocking Diodes in High-Temperature Environment

    Publication Year: 2009 , Page(s): 557 - 562
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (701 KB) |  | HTML iconHTML  

    This paper reports on the life tests of silicon carbide Schottky diodes with high-temperature operation capability (up to 270degC). These 300-V-3-A diodes have been designed to meet the BepiColombo requirements, a European Space Agency mission to Mercury. The life test consisted in a dc current stress of 5 A applied to these diodes at 270degC for 600 h or more. Different diode technologies have be... View full abstract»

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  • Effects of Large-Temperature Cycling Range on Direct Bond Aluminum Substrate

    Publication Year: 2009 , Page(s): 563 - 568
    Cited by:  Papers (12)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (764 KB) |  | HTML iconHTML  

    Substrate reliability has, for a long time, been a concern for systems exposed to harsh environments. State-of-the-art direct bond copper (DBC) substrate is susceptible to large-temperature cycling range. Due to the coefficient of thermal expansion mismatch between copper and the base ceramic (e.g., Al2O3 and AlN), delamination of copper from the ceramic base plate caused by ... View full abstract»

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  • Longer MEMS Switch Lifetime Using Novel Dual-Pulse Actuation Voltage

    Publication Year: 2009 , Page(s): 569 - 575
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (551 KB) |  | HTML iconHTML  

    A novel dual-pulse (NDP) actuation voltage has been proposed to reduce dielectric charging in microelectromechanical system (MEMS) switches, leading to a longer switch lifetime. Mathematical and transient circuit models have been utilized to simulate dielectric charging in the radio-frequency (RF) MEMS switch, enabling the analysis of the charge built up at the switch dielectric and the substrate ... View full abstract»

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  • 2010 IEEE International Reliability Physics Symposium

    Publication Year: 2009 , Page(s): 576
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  • 2009 Index IEEE Transactions on Device and Materials Reliability Vol. 9

    Publication Year: 2009 , Page(s): 577 - 590
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  • IEEE Transactions on Device and Materials Reliability information for authors

    Publication Year: 2009 , Page(s): C3
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  • Blank page [back cover]

    Publication Year: 2009 , Page(s): C4
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Aims & Scope

IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Anthony S. Oates
Taiwan Semiconductor Mfg Co.