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Radio and Electronic Engineer

Issue 4 • Date April 1966

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Displaying Results 1 - 8 of 8
  • Technical innovation and government

    Publication Year: 1966
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (130 KB)

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  • Controlling the information explosion

    Publication Year: 1966, Page(s):195 - 208
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1649 KB)

    The Selective Dissemination of Information or S.D.I, system is aimed at bringing to the individual scientist's attention only those new it e m s 0I" information that are of interest to him. This is done by comparing his subject interests in an electronic digital computer with the subjects covered by each document entering the information system, and printing out from the computer only those items ... View full abstract»

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  • Design of low-noise solid-state microwave sources

    Publication Year: 1966, Page(s):209 - 216
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (802 KB)

    In applications such as communication and Doppler systems, the f.m. noise performance of microwave sources is quite critical. The noise performance of X-band microwave sources using transistorized crystal oscillators and amplifiers and varactor frequency multipliers has been studied. The paper discusses the limitations due to the crystal, the associated oscillator, the amplifier and the multiplier... View full abstract»

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  • Noise limitation in helium-cooled parametric amplifiers

    Publication Year: 1966, Page(s):217 - 224
    Cited by:  Papers (3)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1061 KB)

    The minimum noise temperature of a parametric amplifier depends on the varactor junction capacitance, spreading resistance and its thermal temperature. The time-dependent junction capacitance remains nearly constant by cooling. But the spreading resistance remains constant with cooling only if the varactor is degenerately doped and has an abrupt p-n junction. Actually the junction region is slight... View full abstract»

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  • An investigation into the effects of charge storage on the efficiency of a varactor diode doubler

    Publication Year: 1966, Page(s):225 - 233
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (904 KB)

    A paper on power dissipation in fourpole networks by A. Weissfloch is adapted to calculate the power dissipation in the input and output matching networks of an experimental varactor doubler and therefore to calculate the true input and output powers from semiconductor bulk material. Experimentally measured values of input and output power for specified biases are then compared with predicted valu... View full abstract»

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  • Transistors: reliability, life and the relevance of circuit design

    Publication Year: 1966, Page(s):234 - 240
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (804 KB)

    The paper describes the design features of the highly reliable silicon planar transistors and a brief description of the `accelerated life test¿ is given. These tests have to be carried out with high precision. The problem is discussed from the circuit designer's and the manufacturer's point of view and suggestions are made for obtaining reliable performance and a low rate of failure from the tra... View full abstract»

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  • A Tunnel diode oscillator with wide tuning range (0.7-4.9 Gc/s)

    Publication Year: 1966, Page(s):241 - 244
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (408 KB)

    The tunnel diode is coupled weakly to a relatively high Q resonator essentially of the hybrid, or re-entrant coaxial, type. This construction ensures a wide tuning range and a frequency of oscillation that is relatively insensitive to temperature change, supply voltage variations and interchange of diodes. In the basic form of the oscillator, using a 2 mA peak current germanium diode, stable and c... View full abstract»

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  • Gallium arsenide varactor diodes

    Publication Year: 1966, Page(s):245 - 255
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1386 KB)

    From consideration of the factors influencing the design of varactor diodes for use in high-frequency parametric amplifiers and multipliers it appears that GaAs is the most suitable choice of semiconductor. The high carrier mobility of this material over a wide range of temperatures should enable high cut-off frequency varactor diodes tobe fabricated which will operate at the low temperatures requ... View full abstract»

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