# IEEE Microwave and Wireless Components Letters

## Filter Results

Displaying Results 1 - 25 of 30

Publication Year: 2009, Page(s):C1 - C4
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• ### IEEE Microwave and Wireless Components Letters publication information

Publication Year: 2009, Page(s): C2
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• ### A Broadband and Parametric Model of Differential Via Holes Using Space-Mapping Neural Network

Publication Year: 2009, Page(s):533 - 535
Cited by:  Papers (8)
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This letter presents a novel broadband and completely parametric model of differential via holes by virtue of the space-mapping neural network technique. This model consists of a neural network and an equivalent circuit that is utilized to account for various EM effects of differential via holes. The neural network is trained to learn the multi-dimensional mapping between the geometrical variables... View full abstract»

• ### Experimental Demonstration of Local Quasi-TEM Gap Modes in Single-Hard-Wall Waveguides

Publication Year: 2009, Page(s):536 - 538
Cited by:  Papers (27)  |  Patents (2)
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This letter reports an experimental study of a gap waveguide which is able to support a plurality of degenerate local quasi-TEM modes. No sidewalls are needed to separate these modes, which is a very useful property in the upper microwave and millimeter-wave bands. The waveguiding media is formed in the gap between a conducting plate and a hard surface. The working principle is described first. Ne... View full abstract»

• ### Design and Optimization of a Broadband Waveguide Magic-T Using a Stepped Conducting Cone

Publication Year: 2009, Page(s):539 - 541
Cited by:  Papers (21)
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The design of a broadband waveguide magic-T was accomplished using a genetical swarm optimization (GSO) technique. A multi-stepped, off-centered conducting cone was used to enhance the bandwidth performance of the conventional magic-Ts. The geometrical parameters of the stepped cone were optimized by GSO, and the optimized magic-T for X-band application was fabricated and tested. Measured scatteri... View full abstract»

• ### High-Q Slow-Wave Coplanar Transmission Lines on 0.35 $mu$m CMOS Process

Publication Year: 2009, Page(s):542 - 544
Cited by:  Papers (25)
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In this letter, experimental results and trends for shielded coplanar waveguide transmission lines (S-CPW) implemented in a 0.35 μm CMOS technology are provided. Because of the introduction of floating strips below the CPW transmission line, high effective dielectric permittivity and quality factor are obtained. Three different geometries of S-CPW transmission lines are characterized. For ... View full abstract»

• ### Design of Compact Symmetric Four-Port Crossover Junction

Publication Year: 2009, Page(s):545 - 547
Cited by:  Papers (37)
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Performance of a fully planar four-port crossover coupler is investigated. This bisymmetric circuit consists of a ring and two inner orthogonal sections connecting the diagonal ports. Based on the transmission line theory, analysis equations are formulated and design curves are presented. Two crossover junctions are fabricated and measured for validity confirmation. The measured data have good agr... View full abstract»

• ### Novel Broadband Bandpass Filters Using Y-Shaped Dual-Mode Microstrip Resonators

Publication Year: 2009, Page(s):548 - 550
Cited by:  Papers (53)
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A Y-shaped dual-mode microstrip bandpass filter (BPF) with input-output cross-coupling is presented. The characteristic of the Y-shaped dual-mode resonator has been investigated. The resonance frequencies of the degenerate modes can be adjusted easily to satisfy the bandwidth of the BPF. A parallel-coupling feed structure with a cross coupling has been used to generate two transmission zeros at th... View full abstract»

• ### Compact Wideband Bandpass Filters Using Stepped-Impedance Resonators and Interdigital Coupling Structures

Publication Year: 2009, Page(s):551 - 553
Cited by:  Papers (19)
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This letter proposes a microstrip lambda/4 interdigital stepped-impedance resonator whose impedance ratio can be very low and coupling strength between adjacent resonators can be very large. On the basis of the proposed structure, one four-pole Chebyshev and one four-pole generalized Chebyshev filter with 0.05 dB equal-ripple bandwidths of 48% and 46%, respectively, are designed and fabricated. Bo... View full abstract»

• ### Signal Integrity Analysis of Single-Ended and Differential Striplines in Presence of EBG Planar Structures

Publication Year: 2009, Page(s):554 - 556
Cited by:  Papers (27)
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The present contribution performs a systematic analysis of the impact of planar (or 2-D) EBG structures on the signal transmission performances of single ended and differential striplines that have the patterned plane of the EBG structure as a current reference. View full abstract»

• ### Impact of Substrate Digital Noise Coupling on the High-Frequency Noise Performance of RF MOSFETs

Publication Year: 2009, Page(s):557 - 559
Cited by:  Papers (3)
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The impact of digital noise coupling through the substrate on RF MOSFETs was investigated in terms of the noise figure (NF) of the device up to 26.5 GHz. Previous works on the substrate digital noise coupling have treated the effect mostly in terms of the electrical isolation between ports, rather than actual devices, which does not provide direct information on the degradation of actual device pe... View full abstract»

• ### Millimeter-Wave Reflective-Type Phase Shifter in CMOS Technology

Publication Year: 2009, Page(s):560 - 562
Cited by:  Papers (28)
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The design and measurement of a compact, wide-band reflective-type phase shifter in 90 nm CMOS technology in V-band frequency is presented. This phase shifter has a fractional bandwidth of 26% and an average insertion loss of 6 dB over all phase states. The chip area is only 0.08 mm 2. Measurement results show that the developed phase shifter provides 90?? continuous phase sh... View full abstract»

• ### A TV-Band Harmonic Rejection Mixer Adopting a $g_{m}$ Linearization Technique

Publication Year: 2009, Page(s):563 - 565
Cited by:  Papers (6)
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A TV-band harmonic rejection mixer (HRM) adopting a novel g m linearization technique is proposed and its harmonic rejection ratio (HRR) over the mismatch parameters is analyzed numerically using simple vector diagrams. The operational mechanism of the proposed g m linearization technique is described and its effectiveness is proved with both simulation and meas... View full abstract»

• ### A 0.22 V Quadrature VCO in 90 nm CMOS Process

Publication Year: 2009, Page(s):566 - 568
Cited by:  Papers (7)
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This letter presents an ultra-low voltage quadrature voltage-controlled oscillator (QVCO). The LC-tank QVCO consists of two low-voltage voltage-controlled oscillators (VCOs) with the body dc biased at the drain bias through a resistor. The superharmonic and back-gate coupling techniques are used to couple two differential VCOs to run in quadrature. The proposed CMOS QVCO has been implemented with ... View full abstract»

• ### A Sub-100 $mu{rm W}$ Ku-Band RTD VCO for Extremely Low Power Applications

Publication Year: 2009, Page(s):569 - 571
Cited by:  Papers (12)
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This letter presents the microwave performance of a sub-100 ¿W Ku-band differential-mode resonant tunneling diode (RTD)-based voltage controlled oscillator (VCO) with an extremely low power consumption of 87 ¿W using an InP-based RTD/HBT MMIC technology. In order to achieve the extremely low-power Ku-band RTD VCO, the device size of RTD is scaled down to 0.6 × 0.6 ¿m2 View full abstract»

• ### A 36–80 GHz High Gain Millimeter-Wave Double-Balanced Active Frequency Doubler in SiGe BiCMOS

Publication Year: 2009, Page(s):572 - 574
Cited by:  Papers (29)
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This letter presents a high conversion gain double-balanced active frequency doubler operating from 36 to 80 GHz. The circuit was fabricated in a 200 GHz fT and fmax 0.18 ??m SiGe BiCMOS process. The frequency doubler achieves a peak conversion gain of 10.2 dB at 66 GHz. The maximum output power is 1.7 dBm at 66 GHz and -3.9 dBm at 80 GHz. The maximum fundamental suppression ... View full abstract»

• ### A 3 mW 54.6 GHz Divide-by-3 Injection Locked Frequency Divider With Resistive Harmonic Enhancement

Publication Year: 2009, Page(s):575 - 577
Cited by:  Papers (23)
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A 54.6 GHz divide-by-3 injection locked frequency divider with low power consumption is presented. A resistive feedback is implemented to achieve a stable dc input and higher injection efficiency. Compared with the conventional design, it exhibits a better supply voltage rejection and wider locking range while a small silicon area is maintained. Fabricated in a TSMC 65 nm bulk CMOS process, this d... View full abstract»

• ### FSK Coherent Demodulation Using Second- Harmonic Injection Locked Oscillator

Publication Year: 2009, Page(s):578 - 580
Cited by:  Papers (6)
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We present an alternative coherent demodulation of frequency shift keying (FSK) signals based on the use of a super harmonic injection locked oscillator (ILO). Demodulation consists of multiplying the incoming FSK signal by the output of the ILO using an up-conversion mixer. The product includes a second harmonic signal that locks the oscillator, closing a non-linear feedback loop, and synchronize... View full abstract»

• ### CMOS Four-Port Direct Conversion Receiver for BPSK Demodulation

Publication Year: 2009, Page(s):581 - 583
Cited by:  Papers (2)
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We propose a new four-port BPSK direct conversion receiver based on 0.18 ??m CMOS technology for the first time. The proposed direct conversion receiver is composed of two active combiners, an active balun, two power detectors and a decoder. The designed direct conversion receiver is successfully demonstrated by demodulating BPSK signal with 40 Mbps in the L-band. View full abstract»

• ### Combined Low Frequency and Third Harmonic Injection in Power Amplifier Linearization

Publication Year: 2009, Page(s):584 - 586
Cited by:  Papers (10)
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Simultaneous injection of the difference frequency and triple frequency signals into the main RF amplifier (alongside the fundamental frequency signals) offers an independent improvement of IM3 and IM5. This advantage is not achievable by other reported techniques. Mathematical analysis of this new power amplifier linearization is presented in order to establish the potential of the proposed techn... View full abstract»

• ### A Compact High-Efficiency CMOS Power Amplifier With Built-in Linearizer

Publication Year: 2009, Page(s):587 - 589
Cited by:  Papers (15)
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In this letter, a compact high-efficiency CMOS power amplifier (PA) with built-in linearizer that works at 2.4 GHz using TSMC 0.18 mum technology for digital wireless communications applications is presented. The cascode configuration is utilized to overcome the low break-down voltage problem and the hot-carrier effects for high power operations of CMOS devices. The linearizer design reduces the A... View full abstract»

• ### A 30 GHz Variable Gain Amplifier With High Output Voltage Swing for Ultra-Wideband Radar

Publication Year: 2009, Page(s):590 - 592
Cited by:  Papers (7)
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This paper reports on the analysis, design and characterization of a 30 GHz fully differential variable gain amplifier for ultra-wideband radar systems. The circuit consists of a variable gain differential stage, which is fed by two cascaded emitter followers. Capacitive degeneration and inductive peaking are used to enhance bandwidth. The maximum differential gain is 11.5 dB with plusmn1.5 dB gai... View full abstract»

• ### A High-Efficiency GaN-Based Power Amplifier Employing Inverse Class-E Topology

Publication Year: 2009, Page(s):593 - 595
Cited by:  Papers (8)
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A high efficiency, GaN based power amplifier (PA) employing the inverse class-E topology is reported. The parasitic inductance and large output capacitance of the packaged active device are used as the series inductance and compensated by a shunt inductor, respectively. The composite right/left-handed transmission line is used as a harmonic control network. For the experimental validation, an inve... View full abstract»

• ### A Continuously Tuned Varactor Array

Publication Year: 2009, Page(s):596 - 598
Cited by:  Papers (2)
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A MOS varactor circuit uses an array of softly switched varactors to improve the linearity of the capacitance tuning-control and reduce the dependence on RF-input signal level while increasing the useful capacitance-tuning range. Test circuits have been fabricated in both 90 nm and 0.35 mum CMOS processes and are directly compared to a conventional varactor. View full abstract»

• ### Phase Locked BWO System for Open Resonator Measurement in D-Band

Publication Year: 2009, Page(s):599 - 601
Cited by:  Papers (6)
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The combination of a D-Band phase-locked backward-wave oscillator (BWO) with a spectrum analyzer for measurement of permittivity and low loss-tangent is presented. For measuring low loss tangent material, such as CVD diamond and high purity semi-insulating (HPSI) 4H-SiC , at millimeter wave ranges, it is necessary to precisely measure an increase of a few kHz in a line-width of 200 k... View full abstract»

## Aims & Scope

The IEEE Microwave and Wireless Components Letters (MWCL) publishes three page papers that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals.

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## Meet Our Editors

Editor in Chief
N. Scott Barker
Dept. Elect. Comp. Eng.
University of Virginia
Charlottesville, VA 22904
barker@virginia.edu
dsk6n@virginia.edu