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IEEE Transactions on Reliability

Issue 3 • Date Aug. 1980

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Displaying Results 1 - 25 of 45
  • [Front cover]

    Publication Year: 1980, Page(s): c1
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  • IEEE Reliability Society

    Publication Year: 1980, Page(s): nil1
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  • [Breaker page]

    Publication Year: 1980, Page(s): nil1
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  • Small Mistakes

    Publication Year: 1980, Page(s): 193
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  • Failure Analysis

    Publication Year: 1980, Page(s): 193
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  • Special Issue on Failure Analysis Preface

    Publication Year: 1980, Page(s):194 - 195
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  • Microprocessor and LSI Microcircuit Reliability-Prediction Model

    Publication Year: 1980, Page(s):196 - 202
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1624 KB)

    This paper discusses the development of an improved failure-rate prediction method which can be used to assess the reliability of complex and new-technology microcircuits, especially memories, microprocessors, and their support devices. The prediction models are similar to those presented in MIL-HDBK-217C with several modifications to reflect the variation of reliability sensitive parameters and t... View full abstract»

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  • Book Reviews

    Publication Year: 1980, Page(s): 202
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  • Economical Failure Analysis for Microprocessors

    Publication Year: 1980, Page(s):203 - 207
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1530 KB)

    A technique is presented for isolating the failing node within a microprocessor type chip. The computer-driven production-tester is used to identify the failing instructions prior to failure analysis. In the laboratory, simple two or three instruction test-patterns are programmed into a n × 16 (1 ¿ n ¿ 255) memory buffer and then clocked into the device under test in an endless repetitive loop.... View full abstract»

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  • Manuscripts Received

    Publication Year: 1980, Page(s): 207
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  • Reliability Evaluation and Prediction for Discrete Semiconductors

    Publication Year: 1980, Page(s):208 - 216
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1575 KB)

    The use of accelerated step-stress and constant stress-in-time test techniques is demonstrated for generating models for predicting reliability at use conditions. Reliability prediction models were obtained for a signal diode, signal and power transistors, silicon trolled rectifier, and metal oxide varistor. Each of these device types follows the Arrhenius model for reliability prediction. Techniq... View full abstract»

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  • Manuscripts Received

    Publication Year: 1980, Page(s): 216
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  • Low-Field Time-Dependent Dielectric Integrity

    Publication Year: 1980, Page(s):217 - 221
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (853 KB)

    A major contributor to reliability failures in integrated circuits has been the failure of dielectrics under operating stress. This paper summarizes extensive studies carried out on many manifestations of dielectric integrity failure. The outcome is a single model used to predict failure from data obtained in accelerated testing. The model contains the effect of temperature and applied voltage on ... View full abstract»

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  • Correspondence

    Publication Year: 1980, Page(s): 221
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (211 KB)

    s-Confidence limits have already been generated for accept/reject plans in MIL-STD-781C. View full abstract»

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  • GaAs FET Failure Mechanisms Due to High Humidity and Ionic Contamination

    Publication Year: 1980, Page(s):222 - 231
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (6600 KB)

    Failure mechanisms resulting from the concurrent exposure to high relative humidity, ion contamination, and temperature cycling were studied in commercially available, low noise GaAs fieldeffect transistors (FETs). This type of device will be applied in such adverse environmental conditions. Devices with Al and Au/refractory gates from four different suppliers were studied. Au/refractory gate devi... View full abstract»

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  • Manuscripts Received

    Publication Year: 1980, Page(s): 231
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  • Degradation of GaAs MESFETs in Radiation Environments

    Publication Year: 1980, Page(s):232 - 236
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1055 KB)

    The effects of gamma and neutron irradiation on lownoise, GaAs MESFETs are reviewed, with emphasis on microwave amplifier characterisitics. With gamma irradiation, the amplifier noise figure degrades above 107 rads (Si), without change in signal parameters. With neutron irradiation, amplifier gain and noise figure degrade above 1014 n/cm2. With gamma irradiation, unidentified levels are apparently... View full abstract»

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  • Manuscripts Received

    Publication Year: 1980, Page(s): 236
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  • Semiconductor Instability Failure Mechanisms Review

    Publication Year: 1980, Page(s):237 - 249
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (5193 KB)

    This paper reviews the mechanisms of semiconductor instabilities for the purpose of better understanding this very complex phenomenon. As a result of this understanding, the semiconductor instabilities can be kept to a minimum in design and production. The basic ideas, diagrams, and references are presented for: instabilities due to surface charge on the silicon dioxide (SiO2), conduction on oxide... View full abstract»

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  • Cumulative Damage Model with Correlated Interarrival Times of Shocks

    Publication Year: 1980, Page(s): 249
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (197 KB)

    A machine is exposed to a cumulative damage process. The damages are caused by shocks whose interarrival times are constantly correlated and exponentially distributed. Using the distribution of the exchangeable random variables, the life time distribution, its mean and variance are calculated. View full abstract»

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  • Bonding-Failure Analysis with Electron Beam and Nuclear Scattering Techniques

    Publication Year: 1980, Page(s):250 - 257
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4520 KB)

    Failure mechanisms related to gold bonding were determined using the scanning electron microscope, Auger electron spectroscopy, X-ray energy dispersive spectroscopy, electron microprobe analysis, and deuteron probe analysis. Power transistors from different lots were analyzed; there were four types of bond defects. Type I defect is darkened carbon inclusions in the bond area. Type II defect is a c... View full abstract»

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  • Free proceedings

    Publication Year: 1980, Page(s): 257
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  • Human Error with a Blending-Process Simulator

    Publication Year: 1980, Page(s):258 - 264
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1244 KB)

    Simulation experiments have been done to get a better insight into human errors made by chemical-process operators. A chemical batch process was simulated. The human subjects were apprentice operators of process plants. Two factors were studied: 1] Training and experience, 2] Comprehensiveness of the task instruction. In the first series of experiments no process disturbances were introduced. That... View full abstract»

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  • Landmarks in R&M Engineering: #7 On Innovation

    Publication Year: 1980, Page(s): 264
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  • Availability Analysis of a Fault-Tolerant Computer System

    Publication Year: 1980, Page(s):265 - 268
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (624 KB)

    Queueing network theory is applied in order to determine the availability of a fault-tolerant multiprocessor computer system. Mean repair times and utilizations of system units are computed. Subsystem availabilities are obtained by the decomposition technique of queueing network theory. View full abstract»

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Aims & Scope

IEEE Transactions on Reliability is concerned with the problems involved in attaining reliability, maintaining it through the life of the system or device, and measuring it.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
W. Eric Wong
University of Texas at Dallas
Advanced Res Ctr for Software Testing and Quality Assurance

ewong@utdallas.edu