Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Issue 1 • Date Jan 2008
Filter Results
Displaying Results 1 - 25 of 88
-
Issue Cover
|
PDF (55 KB)
-
Issue Table of Contents
|
PDF (130 KB)
-
Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition
|
PDF (338 KB)
-
-
Fabrication of ideally ordered anodic porous alumina with large area by vacuum deposition of Al onto mold
|
PDF (440 KB)
-
-
-
Undercut structure fabricated by complementary-structure micropatterning technique for the passive-matrix display of organic light-emitting diodes
|
PDF (443 KB)
-
Fabrication and performance of nanoscale ultrasmooth programed defects for extreme ultraviolet lithography
|
PDF (725 KB)
-
Studies of fluorocarbon film deposition and its correlation with etched trench sidewall angle by employing a gap structure using
C4F8/Ar andCF4/H2 based capacitively coupled plasmas |
PDF (699 KB)
-
-
-
Turn-on field distribution of field-emitting sites in carbon nanotube film: Study with luminescent image
|
PDF (684 KB)
-
-
-
Enhanced local oxidation of silicon using a conducting atomic force microscope in water
|
PDF (381 KB)
-
Optical properties of
n -dopedGa1-xMnxN epitaxial layers grown by metal-organic chemical-vapor deposition in mid and far(5-50 μm) IR range |
PDF (330 KB)
-
-
-
Improvement of the wiggling profile of spin-on carbon hard mask by
H2 plasma treatment |
PDF (664 KB)
-
-
-
Flare-variation compensation for
32 nm line and space pattern for device manufacturing on extreme-ultraviolet lithography |
PDF (522 KB)
-
Potential of phase-shifted optical proximity correction for
65 nm T-shaped pattern in high numerical aperture lithography |
PDF (492 KB)
-
Atomic diffusion and interface electronic structure at
In0.49Ga0.51P/GaAs heterojunctions |
PDF (645 KB)
Aims & Scope
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Meet Our Editors
Editor
Gary E. McGuire
International Technology Center
