Issue 5 • Date Sep 2005
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Displaying Results 1 - 25 of 75
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Issue Cover
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PDF (12 KB)
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Issue Table of Contents
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PDF (128 KB)
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Real-time material quality prediction, fault detection, and contamination control in
AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing
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PDF (437 KB)
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Silicon carbide based dielectric composites in bilayer sidewall barrier for Cu/porous ultralow-
k interconnects
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PDF (168 KB)
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Formation of vertical ridge structure in
660 nm laser diodes for high power single mode operation
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PDF (178 KB)
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As-doped polysilicon emitters with interfacial oxides and correlation to bipolar device characteristics
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PDF (144 KB)
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Fabrication of identical sub-100 nm closely spaced parallel lines using electron beam lithography
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PDF (197 KB)
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Electron beam lithography with negative Calixarene resists on dense materials: Taking advantage of proximity effects to increase pattern density
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PDF (286 KB)
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Effect of film thickness on the ferroelectric properties of
Pb(Zr0.2Ti0.8)O3 thin films for nano-data storage applications
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PDF (272 KB)
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Epitaxial growth of
NiSi2 on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thinSi3N4 layer
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PDF (342 KB)
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Temperature dependence of carrier dynamics for
InAs/GaAs quantum dot infrared photodetectors
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PDF (362 KB)
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Silver coplanar waveguides as the passive components of choice for microwave integrated circuits
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PDF (284 KB)
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Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs
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PDF (215 KB)
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Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor
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PDF (181 KB)
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Study of diffusion and quality control for
CoSi2 formation by oxide-mediated cobalt silicidation with Ti capping
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PDF (298 KB)
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Influence of the growth temperature on the atomic distribution of TEOS deposited
SiO2 films
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PDF (141 KB)
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Spindt tip composed of carbon nanotubes
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PDF (645 KB)
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Aims & Scope
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Meet Our Editors
Editor
Gary E. McGuire
International Technology Center


