IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | Sign In

Author Search^beta | Advanced Search | Preferences | | More Search Options

Browse Journals & Magazines > Electron Device Letters, IEEE ... Volume 13 Issue 10

Electron Device Letters, IEEE

| Create Account

IEEE Account

Change Username/Password
Update Address

Purchase Details

Payment Options
Order History
Access Purchased Documents

Profile Information

Communications Preferences
Profession and Education
Technical Interests

Need Help?

US & Canada: +1 800 678 4333
Worldwide: +1 732 981 0060
Contact & Support

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.

Please enter a valid username or password.

For Institutional Users:

More Search Options

Electron Device Letters, IEEE

Issue 10 • Date Oct. 1992

Society Sponsor

Filter Results

You have selected:

You have selected:

Silicon-carbide high-voltage (400 V) Schottky barrier diodes

InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with a carbon-doped base grown by MOCVD

Ultrashallow junctions for ULSI using As/sub 2//sup +/ implantation and rapid thermal anneal

Near-ideal I-V characteristics of GaInP/GaAs heterojunction bipolar transistors

Time-dependent dielectric breakdown characteristics of N/sub 2/O oxide under dynamic stressing

Silicon-on-insulator approach for power IC's integrating vertical DMOS and polycrystalline silicon CMOS thin-film transistors

Improvement of charge trapping characteristics of N/sub 2/O-annealed and reoxidized N/sub 2/O-annealed thin oxides

Hot-carrier effects in fully depleted submicrometer NMOS/SIMOX as influenced by back interface degradation

InAlAs/InGaAs/InP MODFET's with uniform threshold voltage obtained by selective wet gate recess

Batch fabrication and structure of integrated GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electro-optic effect devices (FET-SEED's)

Low-conductance drain (LCD) design of InAlAs/InGaAs/InP HEMT's

Hot-carrier-induced degradation of gate dielectrics grown in nitrous oxide under accelerated aging

Effects of impact ionization on I-V characteristics of GaAs n-i-n structures including hole trap

Series resistance effects in thin oxide capacitor evaluation

Comments, with reply, on 'Schottky contact effects in the sidegating effect of GaAs devices'

A new method of determination of the I-V characteristics of negative differential conductance devices

Aims & Scope

Meet Our Editors

Further Links

IEEE Account

Purchase Details

Profile Information

Need Help?