Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Issue 2 • Date Mar 2004
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Displaying Results 1 - 25 of 73
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Issue Cover
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PDF (7 KB)
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Issue Table of Contents
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Global warming gas emission during plasma cleaning process of silicon nitride using
c-C4F8O/O2 chemistry with additive Ar andN2 |
PDF (310 KB)
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Recovery of dry-etch-induced surface damage on Mg-doped GaN by
NH3 ambient thermal annealing |
PDF (42 KB)
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Fabrication of curved structures with electron-beam and surface structure characterization
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PDF (1355 KB)
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Microfabricated cantilever with metallic tip for electrostatic and capacitance microscopy and its application to investigation of semiconductor devices
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PDF (594 KB)
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Transformer coupled plasma etching of 3C-SiC films using fluorinated chemistry for microelectromechanical systems applications
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PDF (503 KB)
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Utilizing maximum likelihood deblurring algorithm to recover high frequency components of scanning electron microscopy images
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PDF (570 KB)
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Effect of the cyclic delivery of
(hexafluoroacetylacetonate)Cu(I) ×(3,3-dimethyl-1-butene) pulse and Ar purge gas on the low temperature copper metalorganic chemical vapor deposition |
PDF (297 KB)
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Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in
SiO2 etching processes |
PDF (313 KB)
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High quality ion-induced secondary electron imaging for MeV nuclear microprobe applications
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PDF (424 KB)
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Post-growth process relaxation properties of strained
Cd0.92Zn0.08Te/Cd0.83Zn0.17Te quantum well heterostructures grown by molecular beam epitaxy |
PDF (86 KB)
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Magnetic field and temperature dependence of an atomic force microscope-defined quantum point contact
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PDF (197 KB)
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InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor with high breakdown, low offset, and knee voltage
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PDF (68 KB)
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Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination
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PDF (87 KB)
Aims & Scope
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Meet Our Editors
Editor
Gary E. McGuire
International Technology Center
