Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Issue 5 • Date Sep 1998
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Displaying Results 1 - 25 of 61
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Issue Table of Contents
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PDF (39 KB)
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Si/SiGe field-effect transistors*
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PDF (379 KB)
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Voltage-tunable near-infrared photodetector: Versatile component for optical communication systems
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PDF (83 KB)
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Study of reaction and electrical properties at Ti/SiGe/Si(100) contacts for ultralarge scale integrated applications
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PDF (124 KB)
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SiGe/Si heterostructures produced by double-energy
Si+ andGe+, andGe+ andGe2+ ion implantations |
PDF (1623 KB)
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Growth of strained GaInP on InP by metalorganic molecular beam epitaxy for heterostructure field effect transistor application
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PDF (110 KB)
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Molecular beam epitaxial growth of InAs/AlGaAsSb deep quantum well structures on GaAs substrates
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PDF (531 KB)
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Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001) GaAs
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PDF (1555 KB)
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Operational experience with a valved antimony cracker source for use in molecular beam epitaxy
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PDF (728 KB)
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Study of the mechanisms of GaN film growth on GaAs surfaces by thermal and plasma nitridation
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PDF (2168 KB)
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Thermal decomposition of bulk and heteroepitaxial (100) InP surfaces: A combined in situ scanning electron microscopy and mass spectrometric study
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PDF (406 KB)
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Gate recessing optimization of GaAs/Al
0.22 Ga0.78 As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power applications |
PDF (1344 KB)
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Investigation of citric acid-hydrogen peroxide etched GaAs and
Al0.3Ga0.7As surfaces by spectroscopic ellipsometry |
PDF (128 KB)
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Magnetron ion etching of through-wafer via holes for GaAs monolithic microwave integrated circuits using
SiCl4 |
PDF (286 KB)
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High-density, inductively coupled plasma etch of sub half-micron critical layers: Transistor polysilicon gate definition and contact formation
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PDF (557 KB)
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Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidation
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PDF (161 KB)
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Elimination of gate oxide damage during electron cyclotron resonance plasma etching of the tungsten polycide gate structure (WSi/poly-Si)
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PDF (441 KB)
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Contact resistance degradation of Pd/Ge ohmic contact on pseudomorphic high electron mobility transistor
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PDF (96 KB)
Aims & Scope
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Meet Our Editors
Editor
Gary E. McGuire
International Technology Center
