Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Issue 3 • Date May 1996
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Displaying Results 1 - 25 of 168
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Issue Table of Contents
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PDF (91 KB)
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Noncontact scanning force microscopy using a direct‐oscillating piezoelectric microcantilever
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PDF (631 KB)
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Atomic species identification in scanning tunneling microscopy by time‐of‐flight spectroscopy
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PDF (310 KB)
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Shallow ripples with giant wavelengths observed by atomic force microscopy: Real effects and the report of a new artifact
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PDF (525 KB)
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Scanning force microscopy study of the surface topography of thin BaTiO
3 films deposited by pulsed laser ablation |
PDF (6911 KB)
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Cross‐sectional scanning tunneling spectroscopy of cleaved, silicon‐based metal–oxide–semiconductor junctions
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PDF (89 KB)
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Surface structures of thermoplastic and thermoset films after modification by graft copolymerization: Comparative study by x‐ray photoelectron spectroscopy and atomic force microscopy
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PDF (7963 KB)
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In situ observation of the tip shape of Co–Ge liquid alloy ion sources in a high‐voltage transmission electron microscope
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PDF (994 KB)
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Application of time‐resolved scanning electron microscopy to the analysis of the motion of micromechanical structures
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PDF (2407 KB)
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Influence of Coulomb interactions on choice of magnification, aperture size, and source brightness in a two lens focused ion beam column
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PDF (167 KB)
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Examination of Ge/Si and GeSi/Si surface nanostructures using transmission electron microscopy and focused ion beam assisted processing
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PDF (675 KB)
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Epitaxial growth of Si
1-x-y Gex Cy alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane |
PDF (542 KB)
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Buried‐gate oxide thinning during epitaxial lateral overgrowth for dual‐gated metal–oxide–semiconductor field‐effect transistors
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PDF (125 KB)
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Characterization of Si
1-x Gex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor |
PDF (216 KB)
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Microwave plasma nitridation of Si(100), Ge(100), and Si
1-x Gex surfaces: A comparative study |
PDF (96 KB)
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In situ investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO
2 |
PDF (304 KB)
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Analysis of Fourier transform infrared spectra and peak shifts in plasma‐enhanced chemical vapor deposited fluorinated silica glasses
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PDF (65 KB)
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Structural and electrical characterization of TiO
2 grown from titanium tetrakis‐isopropoxide (TTIP) and TTIP/H2 O ambients |
PDF (126 KB)
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Molecular‐beam epitaxy of high quality lattice matched In
1-x-y Gax Aly As epitaxial layers on InP substrates |
PDF (298 KB)
Aims & Scope
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Meet Our Editors
Editor
Gary E. McGuire
International Technology Center
