Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Issue 2 • Date Mar 1991
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Displaying Results 1 - 25 of 246
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Issue Table of Contents
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PDF (5042 KB)
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Etching reactions for silicon with F atoms: Product distributions and ion enhancement mechanisms
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PDF (2034 KB)
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Characterization of low temperature SiO
2 and Si3 N4 films deposited by plasma enhanced evaporation |
PDF (706 KB)
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Interaction between Al–Si–Cu alloys and MoSi
2 |
PDF (955 KB)
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A combined Rutherford backscattering and Auger electron spectroscopy analysis of Ni/Au/Te ohmic contacts to n‐GaAs
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PDF (972 KB)
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p‐buffer layer dependent drift mobility profiles in GaAs metal–semiconductor field‐effect transistors
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PDF (338 KB)
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Graded‐index strained multiquantum‐well GaInAsP lasers grown by gas‐source molecular‐beam epitaxy: Growth and characterization
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PDF (361 KB)
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GaAs quantum well negative differential resistance device prepared by molecular‐beam epitaxy
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PDF (705 KB)
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The continuous wave laser‐induced dry etching of GaAs and related substrates in a dimethylzinc ambient
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PDF (1002 KB)
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Additive tracers for resist plasma etching
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PDF (439 KB)
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Determination of acid diffusion in chemical amplification positive deep ultraviolet resists
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PDF (1366 KB)
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Optimization and synthesis of electrostatic nonaccelerating two‐interval spline lenses
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PDF (694 KB)
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Fine pattern definition with atomic intermixing induced by focused ion beam and its application to x‐ray mask fabrication
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PDF (1043 KB)
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Operational characteristics of SF
6 etching in an electron cyclotron resonance plasma reactor |
PDF (807 KB)
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Characterization of a new electron cyclotron resonance source working with permanent magnets
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PDF (847 KB)
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Axial radio frequency electric field intensity and ion density during low to high mode transition in argon electron cyclotron resonance discharges
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PDF (1427 KB)
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Wide area windowless disk plasma lamp of uniform intensity for use in microelectronic film processing
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PDF (539 KB)
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Plasma versus ozone photoresist ashing: Temperature effects on process‐induced mobile ion contamination
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PDF (451 KB)
Aims & Scope
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Meet Our Editors
Editor
Gary E. McGuire
International Technology Center
