Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Issue 2 • Date Mar 1989
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Displaying Results 1 - 25 of 61
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Issue Table of Contents
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PDF (841 KB)
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Rapid thermal processing of silicon dioxide films in metal–oxide semiconductor capacitors: High‐temperature SiO
2 decomposition at the SiO2 –Si interfaces in inert ambient |
PDF (564 KB)
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Stability of hydrogen in silicon nitride films deposited by low‐pressure and plasma enhanced chemical vapor deposition techniques
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PDF (491 KB)
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Effects of thermal history on stress‐related properties of very thin films of thermally grown silicon dioxide
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PDF (1745 KB)
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The investigation of mixed halogen freon/oxygen tungsten reactive ion etching chemistries with extension to silicon
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PDF (981 KB)
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Focused ion beam secondary ion mass spectrometry: Ion images and end‐point detection
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PDF (1215 KB)
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Molecular‐beam epitaxial growth and interface characteristics of GaAsSb on GaAs substrates
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PDF (614 KB)
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Influence of the Si evaporation source on the incorporation of In during Si molecular‐beam epitaxy growth: A comparative study of magnetically and electrostatically‐focused electron‐gun evaporators
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PDF (1049 KB)
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A single‐filament effusion cell with reduced thermal gradient for molecular‐beam epitaxy
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PDF (529 KB)
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Dimer and tetramer formation in an AsH
3 cracker studied by calibrated quadrupole mass spectrometry |
PDF (1104 KB)
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Silicon epitaxial growth on germanium using an Si
2 H6 low‐pressure chemical vapor deposition technique |
PDF (732 KB)
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Limitation of low‐temperature low‐pressure chemical vapor deposition of SiO
2 for the insulation of high‐density multilevel metal very large scale integrated circuits |
PDF (722 KB)
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Current induced heating of the codeposited metal–silicon runners to form low‐resistivity crystallized disilicides
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PDF (487 KB)
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Erratum: Dry etching induced damage on vertical sidewalls of GaAs channels [J. Vac. Sci. Technol. B 6, 1916 (1988)]
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PDF (92 KB)
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Properties of II–VI semiconductor films grown by photoassisted molecular‐beam epitaxy
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PDF (741 KB)
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Electrical and optical characterization of molecular‐beam epitaxy grown Ga‐doped ZnSe.
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PDF (775 KB)
Aims & Scope
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Meet Our Editors
Editor
Gary E. McGuire
International Technology Center
