Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Issue 1 • Date Jan 1995
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Displaying Results 1 - 25 of 28
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Extremely low specific contact resistivities for p‐type GaSb, grown by molecular beam epitaxy
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PDF (77 KB)
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Sequential tunneling through n‐type GaAs/AlGaAs multi‐quantum‐well structures with Schottky and ohmic contacts
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PDF (159 KB)
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Passivation of GaAs surfaces and AlGaAs/GaAs heterojunction bipolar transistors using sulfide solutions and SiN
x overlayer |
PDF (138 KB)
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Comparison of H+ and He+ implant isolation of GaAs‐based heterojunction bipolar transistors
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PDF (165 KB)
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Plasma‐induced damage of GaAs pn‐junction diodes using electron cyclotron resonance generated Cl
2 /Ar, BCl3 /Ar, Cl2 /BCl3 /Ar, and SiCl4 /Ar plasmas |
PDF (504 KB)
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Resolution enhanced scanning force microscopy measurements for characterizing dry etching methods applied to titanium masked InP
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PDF (951 KB)
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Evaluation of the performance and operating characteristics of a solid phosphorus source valved cracking cell for molecular beam epitaxy growth of III–V compounds
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PDF (125 KB)
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Characterization of the Si/GaAs(110) interface by soft x‐ray surface x‐ray absorption fine structure
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PDF (188 KB)
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X‐ray photoelectron spectroscopy and atomic force microscopy surface study of GaAs(100) cleaning procedures
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PDF (295 KB)
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Problems relevant to the use of optical pyrometers for substrate temperature measurements and controls in molecular beam epitaxy
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PDF (123 KB)
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Monolayer resolved monitoring of AlAs growth with metalorganic molecular beam epitaxy by reflectance anisotropy spectroscopy
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PDF (93 KB)
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Scaling of Si and GaAs trench etch rates with aspect ratio, feature width, and substrate temperature
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PDF (506 KB)
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Ellipsometry study of the nucleation of Si epitaxy by electron cyclotron resonance plasma chemical vapor deposition
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PDF (519 KB)
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Postgrowth of a Si contact layer on an air‐exposed Si
1-x Gex /Si single quantum well grown by gas‐source molecular beam epitaxy, for use in an electroluminescent device |
PDF (382 KB)
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Role of ions in electron cyclotron resonance plasma‐enhanced chemical vapor deposition of silicon dioxide
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PDF (147 KB)
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Filling dual damascene interconnect structures with AlCu and Cu using ionized magnetron deposition
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PDF (1546 KB)
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Characterization of thin copper films grown via chemical vapor deposition using liquid coinjection of trimethylvinylsilane and (hexafluoroacetylacetonate) Cu (trimethylvinylsilane)
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PDF (544 KB)
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Optimization of electrostatic deflectors
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PDF (213 KB)
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Fabrication of column‐based silicon field emitter arrays for enhanced performance and yield
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PDF (645 KB)
Aims & Scope
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Meet Our Editors
Editor
Gary E. McGuire
International Technology Center
