Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Issue 6 • Date Nov 1994
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Displaying Results 1 - 25 of 187
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Issue Table of Contents
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PDF (2202 KB)
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Growth of beryllium doped Al
x Ga1-x As/GaAs mirrors for vertical‐cavity surface‐emitting lasers |
PDF (1070 KB)
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Nearly ideal characteristics of GaAs metal–insulator–semiconductor diodes by atomic layer passivation
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Si‐indiffusion and O‐outdiffusion processes at Si/SiO
2 /GaAs‐oxides/GaAs structures: Implications in SiO2 formation and GaAs regrowth |
PDF (984 KB)
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Electroreflectance of Ag/GaAs
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PDF (349 KB)
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Continuous ultra‐dry process for enhancing the reliability of ultrathin silicon oxide films in metal–oxide semiconductors
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PDF (567 KB)
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Investigation of electron source and ion flux uniformity in high plasma density inductively coupled etching tools using two‐dimensional modeling
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PDF (3367 KB)
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Profile simulation of electron cyclotron resonance planarization of an interlevel dielectric
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PDF (881 KB)
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Morphology of anodically etched Si(111) surfaces: A structural comparison of NH
4 F versus HF etching |
PDF (511 KB)
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Solid source diffusion from agglomerating silicide sources. II. Experimental results and analysis
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PDF (1069 KB)
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Advanced fabrication techniques of three‐dimensional microstructures for future electronic devices
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PDF (940 KB)
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Fabrication of noble‐metal nanoconstrictions and observation of conductance fluctuations
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PDF (610 KB)
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Reduced effects of laser illumination on field emission due to the finite duration of quantum tunneling
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PDF (550 KB)
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Effects of sulfur passivation and rapid thermal annealing on the electrical properties of InP metal–insulator semiconductor Schottky diodes
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PDF (411 KB)
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Aims & Scope
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Meet Our Editors
Editor
Gary E. McGuire
International Technology Center
