Issue 3 • Date May 1993
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Displaying Results 1 - 25 of 143
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Issue Table of Contents
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PDF (2556 KB)
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Localized thinning of GaAs/GaAlAs nanostructures by a combined scanning electron micrograph/focus ion beam system for high‐quality cross‐sectional transmission electron microscopy samples
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PDF (1069 KB)
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Selective regrowth of InP and GaAs by organometallic vapor phase epitaxy and metalorganic molecular beam epitaxy around dry etched features
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PDF (1419 KB)
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Digital etching of III–V multilayered structures combined with laser ionization mass spectroscopy: Photon‐assisted depth profiling
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PDF (702 KB)
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Surface morphology and quality of strained InGaAs grown by molecular‐beam epitaxy on GaAs
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PDF (1037 KB)
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Effect of substrate temperature on ultrahigh vacuum interfaces of indium oxide/GaAs(110)
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PDF (496 KB)
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Annealing behavior of Au(Te)/n‐GaAs contacts
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PDF (1228 KB)
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Effect of crystalline defects on electrical properties of heavily Si‐doped strain‐relaxed In
0.5 Ga0.5 As layers grown by molecular beam epitaxy on GaAs
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PDF (667 KB)
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Photoluminescence and Hall characterization of pseudomorphic GaAs/InGaAs/AlGaAs heterostructures grown by molecular‐beam epitaxy
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PDF (923 KB)
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Molecular‐beam epitaxial growth and characterization of modulation‐doped field‐effect transistor heterostructures using InAs/GaAs superlattice channels
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PDF (953 KB)
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Determination of the mechanical stress in plasma enhanced chemical vapor deposited SiO
2 and SiN layers
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PDF (415 KB)
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Selective reactive ion etching in SiCl
4 /SiF4 plasmas for gate recess in GaAs/AlGaAs modulation‐doped field effect transistors
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PDF (952 KB)
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Fabrication and characterization of electron beam evaporated silicon field emitter arrays
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PDF (800 KB)
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Influences of gases on the field emission
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PDF (597 KB)
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Local modification of HF‐treated silicon (100) surface and its characterization by scanning tunneling microscopy and spectroscopy
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PDF (993 KB)
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Multiple‐exposure interferometric lithography
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PDF (1823 KB)
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Properties of electromagnetic fields in x‐ray lithographic masks: Guided modes and beam propagation calculus
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PDF (1441 KB)
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Aims & Scope
The Journal of Vacuum Science and Technology B is devoted to reports of original research, review articles, and Critical Review articles.
Meet Our Editors
Editor
Gary E. McGuire
International Technology Center


