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# IEEE Transactions on Magnetics

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Displaying Results 1 - 25 of 151
• ### [Front cover]

Publication Year: 2009, Page(s): C1
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• ### IEEE Transactions on Magnetics publication information

Publication Year: 2009, Page(s): C2
| PDF (38 KB)

Publication Year: 2009, Page(s):2349 - 2359
| PDF (109 KB)
• ### Conference Chairs' Foreword

Publication Year: 2009, Page(s): 2360
| PDF (21 KB) | HTML
• ### Publication Chairs' Preface

Publication Year: 2009, Page(s): 2361
| PDF (20 KB) | HTML
• ### Asian Magnetics Conference 2008 Committees

Publication Year: 2009, Page(s):2362 - 2363
| PDF (27 KB) | HTML
• ### Transport Properties of Magnetic Tunnel Junctions Comprising NiFeSiB/CoFeB Hybrid Free Layers

Publication Year: 2009, Page(s):2364 - 2366
Cited by:  Papers (4)
| | PDF (459 KB) | HTML

We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both ... View full abstract»

• ### Spin-Polarized Current Switching of Co/Cu/Py Elongated Pac-Man Spin-Valve

Publication Year: 2009, Page(s):2367 - 2370
Cited by:  Papers (2)
| | PDF (416 KB) | HTML

We investigated spin-polarized current switching of elongated Pac-man (EPM) elements in a Pac-man shaped spin valve (Co/Cu/Py). The aspect ratio, pulse duration, and effect of antiferromagnetic (AFM) layer were simulated to obtain coherent switching. Pulse duration was varied on the picosecond (ps) scale and showed that ultra-fast switching could be achieved. A critical aspect ratio of 4.2 was fou... View full abstract»

• ### Substrate Biasing Effect during MgO Deposition in CoFeB/MgO/CoFeB MTJs

Publication Year: 2009, Page(s):2371 - 2373
Cited by:  Papers (3)
| | PDF (180 KB) | HTML

High tunneling magnetoresistance (TMR) ratio and low RA in magnetic tunnel junctions are necessary condition for application in magnetic random access memory. To get high TMR ratio and low RA, good quality of MgO (002) insulating layer is important. To increase crystalline quality of MgO (002) layer, we applied negative bias on the substrate during MgO deposition. We report the results of the tunn... View full abstract»

• ### Sensitivity Dependence of the Planar Hall Effect Sensor on the Free Layer of the Spin-Valve Structure

Publication Year: 2009, Page(s):2374 - 2377
Cited by:  Papers (6)
| | PDF (426 KB) | HTML

Planar Hall effect (PHE) sensors with the junction size of 50 mum times 50 mum were fabricated successfully by using spin-valve thin films Ta(5)/NiFe(x) /Cu(1.2)/NiFe(2)/IrMn(15)/Ta(5) (nm) with x = 4, 8, 10, 12, 16. The magnetic field sensitivity of the PHE sensors increases with increasing thickness of ferromagnetic (FM) free layer. The sensitivity of about 95.5 m Omega/(kA/m) can be obtained wh... View full abstract»

• ### Optimization of Spin-Valve Structure NiFe/Cu/NiFe/IrMn for Planar Hall Effect Based Biochips

Publication Year: 2009, Page(s):2378 - 2382
Cited by:  Papers (13)
| | PDF (763 KB) | HTML

This paper deals with the planar Hall effect (PHE) of Ta(5)/NiFe(tF)/Cu(1.2)/NiFe(tP)/IrMn(15)/Ta(5) (nm) spin-valve structures. Experimental investigations are performed for 50 mumtimes50 mum junctions with various thicknesses of free layer (tF = 4, 8, 10, 12, 16, 26 nm) and pinned layer (tP = 1, 2, 6, 8, 9, 12 nm). The results show that the thicker fre... View full abstract»

• ### Determination of Spin-Orbit Interaction in InAs Heterostructure

Publication Year: 2009, Page(s):2383 - 2385
Cited by:  Papers (2)
| | PDF (231 KB) | HTML

Spin-orbit interaction (SOI) gives a useful tool to control spin precession in the semiconductor without external magnetic field. The Rashba effect induced by spin-orbit interaction enables to imagine the spin field effect transistor in which the resistance modulation is achieved by precession of spins moving in a channel. The oscillatory magnetoresistance was measured to determine SOI parameter o... View full abstract»

• ### Spin Seebeck Effect in Ni$_{81}$Fe$_{19}$/Pt Thin Films With Different Widths

Publication Year: 2009, Page(s):2386 - 2388
Cited by:  Papers (11)
| | PDF (290 KB) | HTML

The spin Seebeck effect (SSE) has been measured in Ni81Fe19 thin films which have different widths by using the inverse spin Hall effect (ISHE) in a Pt wire. The ISHE voltage induced by SSE is enhanced by lengthening the Pt wire. Combined with ISHE, SSE is applicable to the production of electric generators in which the thermoelectric figures of merit are tunable in terms of ... View full abstract»

• ### Spin Interaction Effect on Potentiometric Measurements in a Quantum Well Channel

Publication Year: 2009, Page(s):2389 - 2392
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Spin-orbit interaction induced magnetic field, which can arise from an asymmetry of the potential well, causes imbalance of carrier densities between spin-up and spin-down electrons. In the potentiometric measurement, the detected signal follows the magnetization status of the detection ferromagnet (FM1). In case of adding the neighboring ferromagnet (FM2), the measured potential is decided by bot... View full abstract»

• ### Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties

Publication Year: 2009, Page(s):2393 - 2395
Cited by:  Papers (4)
| | PDF (112 KB) | HTML

We have investigated the effect of Ar pressure during MgO sputtering on the tunnel magnetoresistance (TMR) and resistance area (RA) product of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). The TMR of MTJs with a thin MgO tunnel barrier deposited at different Ar pressures (1.3, 4, 10, and 25 mTorr) shows a consistent relationship with X-ray diffraction (XRD) properties of thick MgO films deposi... View full abstract»

• ### Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction

Publication Year: 2009, Page(s):2396 - 2398
Cited by:  Papers (1)
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The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO... View full abstract»

• ### Magnetoresistance and Magnetic Anisotropy Properties of Strain-Induced Co/Ag Multilayer Films

Publication Year: 2009, Page(s):2399 - 2402
Cited by:  Papers (11)
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We report on the magnetoresistance (MR) properties of [Co(tCo)/Ag 1.5 nm]20 multilayer and alloy films grown with the pulse electrochemical deposition on a polyamide substrate (1 cm2). The induced uniaxial magnetic anisotropy was observed due to the effect of strain in all the multilayer films. The multilayer [Co 1.5 nm/Ag 1.5 nm]20 showed a minimum hysteresis loss... View full abstract»

• ### Negative Magnetoresistance in Dual Spin Valve Structures With a Synthetic Antiferromagnetic Free Layer

Publication Year: 2009, Page(s):2403 - 2406
| | PDF (327 KB) | HTML

Giant magnetoresistance (GMR) in spin valves is due to spin-dependent scattering occurring at ferromagnet/normal metal (F/N) interfaces and/or in the ferromagnetic layers. In a spin valve with a typical F/N/F structure where the spin scattering asymmetry factor (alpha) of both F/N interfaces is the same (more or less than 1), the GMR is expected to be positive. If alpha is greater than one at one ... View full abstract»

• ### Study on Exchange-Biased Perpendicular Magnetic Tunnel Junction Based on Pd/Co Multilayers

Publication Year: 2009, Page(s):2407 - 2409
Cited by:  Papers (5)
| | PDF (107 KB) | HTML

We investigated top and bottom exchange biased perpendicularly magnetized magnetic tunnel junctions (pMTJs) with IrMn and the effects of the multilayer structure on the magnetoresistance and perpendicular exchange bias. The TMR ratio of the top exchange biased (TEB)-pMTJ was significantly deteriorated compared with that of the pseudo-pMTJ, due to the high junction resistance and the in-plane aniso... View full abstract»

• ### Attenuated Oscillation of the Tunneling Magnetoresistance in a Ferromagnet-Metal-Insulator-Ferromagnet Tunneling Junction

Publication Year: 2009, Page(s):2410 - 2412
Cited by:  Papers (6)
| | PDF (117 KB) | HTML

The tunneling magnetoresistance (TMR) ratio is investigated in a ferromagnet-metal-insulator-ferromagnet planar tunneling junction by use of the spin-polarized free-electron model. Due to the coherence multiple reflective scatterings within the metallic layer, the TMR ratio oscillates as the metallic thickness increases. Due to the same scatterings, not only electrons with the out-of-plane energy ... View full abstract»

• ### Designing the Composition of Amorphous Free Layer of a Magnetic Tunnel Junction

Publication Year: 2009, Page(s):2413 - 2416
Cited by:  Papers (11)
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The magnetic and thermal properties of Co70.5Fe4.5Si15B10 and Ni16Fe62Si8B14 quaternary amorphous alloys (metallic glasses) used for a free layer in the magnetic tunnel junctions (MTJs) were studied to correlate magnetic and glass characterization of amorphous alloys and the performance of the MTJs with amorpho... View full abstract»

• ### Proposal of a Novel Pole Type Structures in Perpendicular MRAM for High Gb/Chip

Publication Year: 2009, Page(s):2417 - 2420
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This paper proposes a novel MRAM using perpendicular magnetic tunnel junction device for high capacity. Conventional MRAM has weak points to realize high capacity in the design structure of the cell, one of which is that using simple current injection system can generate only weak switching field. As a solution, we propose a novel MRAM that has two additional poles in this paper. Proposed novel MR... View full abstract»

• ### Capacitance Enhanced Synchronization of Pairs of Spin-Transfer Oscillators

Publication Year: 2009, Page(s):2421 - 2423
Cited by:  Papers (11)  |  Patents (1)
| | PDF (423 KB) | HTML

Macro-spin simulations have been performed to study the synchronization of pairs of serially connected spin torque oscillators in parallel with a capacitor. The sensitivity to the STO process variation, which is modeled by the anisotropy field distribution for different STO samples, can be dramatically decreased by the coupling of a capacitor in the circuit. There exists an optimum capacitance whe... View full abstract»

• ### Room-Temperature Ferromagnetic Property in MnTe Semiconductor Thin Film Grown by Molecular Beam Epitaxy

Publication Year: 2009, Page(s):2424 - 2427
Cited by:  Papers (7)
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MnTe layers of high crystalline quality were successfully grown on Si(111) and Al2O3(0001) substrates by molecular beam epitaxy. We have investigated the structure, magnetic and electric transport properties of MnTe layers by using X-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometer, physical properties measurement system (PPMS), and X-ra... View full abstract»

• ### Ferromagnetic Phase in Bulk (Cd, Cr)Te Dilute Magnetic Semiconductor

Publication Year: 2009, Page(s):2428 - 2430
Cited by:  Papers (3)
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Metallurgical, magnetic and electrical properties of bulk Cr-doped CdTe crystal grown by vertical solidification method are reported. Structural and metallographic investigation showed homogeneous zinc-blende structure with a lattice parameter of about 6.481 Aring. Magnetic measurement showed temperature-induced magnetic phase transition with a Curie temperature ~ 362 K. Resistance with 4 probe me... View full abstract»

## Aims & Scope

IEEE Transactions on Magnetics publishes research in science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Pavel Kabos
National Institute of Standards and Technology