Issue 6 • Date June 2009
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Table of contents
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PDF (57 KB)
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IEEE Transactions on Electron Devices publication information
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PDF (51 KB)
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EDS Membership at Your Service!
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Multi-Channel Field-Effect Transistor (MCFET)—Part I: Electrical Performance and Current Gain Analysis
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PDF (1442 KB)
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Multi-Channel Field-Effect Transistor (MCFET)—Part II: Analysis of Gate Stack and Series Resistance Influence on the MCFET Performance
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PDF (1495 KB)
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Interface-Engineered High-Mobility High-
/Ge pMOSFETs With 1-nm Equivalent Oxide Thickness
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PDF (1041 KB)
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Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


