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IEEE Solid-State Circuits Society Newsletter

Issue 1 • Date Winter 2008

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Displaying Results 1 - 25 of 41
  • IEEE Solid-State Circuit Society News - Cover

    Publication Year: 2008, Page(s): 1
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  • Editor's column

    Publication Year: 2008, Page(s): 2
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  • IEEE Solid-State Circuit Society News - Table of contents

    Publication Year: 2008, Page(s): 3
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  • President's Message

    Publication Year: 2008, Page(s): 4
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  • New recruit to the SSCS editorial team

    Publication Year: 2008, Page(s):4 - 5
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  • Turning students on to circuits

    Publication Year: 2008, Page(s):6 - 9
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (478 KB)

    When one compares today's students to those of earlier generations, the differences are striking. Yet the way most of us teach has essentially remained unchanged since the middle of the past century. No wonder, then, that our students are not attracted to electrical engineering or, among those who are, many are disappointed and just drag along, or even drop out. In this article we discuss what can... View full abstract»

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  • Revisiting "Evolution of the MOSFET Dynamic RAM – A Personal View"

    Publication Year: 2008, Page(s):10 - 16
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (840 KB)

    This first-person account of the early days of semiconductor memory development is reprinted from the IEEE Transactions on Electron Devices, Vol ED-31, no 11, Nov. 1984, pp 1549-1555. In it the author explains how his invention of DRAM came about and he chronicles the evolution of DRAM technology from 1967 through 1984. In that period, he reports, there was a lot of circuit and architectural innov... View full abstract»

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  • Technical literature [Reprint of "Field-Effect Transistor Memory" (US Patent No. 3,387,286)]

    Publication Year: 2008, Page(s):17 - 25
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (927 KB)

    Presents a reproduction of Robert H. Dennard's ground breaking patent for one-transistor dynamic random access memory (DRAM) that led to major increases in computer memory density and decreases in cost. View full abstract»

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  • The History of DRAM Circuit Designs – At the Forefront of DRAM Development –

    Publication Year: 2008, Page(s):27 - 31
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (708 KB)

    Dynamic random-access memory (DRAM) has been the only high-density RAM used for over 30 years despite many attempts to replace it. Contributing to IT advances to this day, it has achieved an unprecedented six-fold increase in memory capacity in the last three decades. The author surveys the history of DRAM circuit design in this paper, based on his career at the forefront of DRAM development from ... View full abstract»

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  • Introduction to “In Quest of the Joy of Creation”

    Publication Year: 2008, Page(s):31 - 36
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    New introductory remarks introduce a reprint of the authors' 2005 article "In Quest of the Joy of Creation." The original article is reproduced from "Innovate the Future," 2005 Hitachi Hyoron Special Edition, pp. 34-39, Hitachi Hyoronsha, Tokyo, Japan. In it the author recalls his 42-year career at Hitachi, focusing on DRAM design there since the early 1970s. Entrusted with developing a 4-Kb DRAM ... View full abstract»

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  • The Stacked Capacitor DRAM Cell and Three-Dimensional Memory

    Publication Year: 2008, Page(s):37 - 41
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    The author chronicles the development of the stacked three-dimensional (3D) DRAM cell, highlighting his role in solving the problems of memory data-bandwidth and forecasting a dramatic increase in memory capacity based on his current work using "super-chip" integration technology. View full abstract»

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  • The Role of the Trench Capacitor in DRAM Innovation

    Publication Year: 2008, Page(s):42 - 44
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (854 KB)

    Cost has been the strongest driving force for growing the DRAM market. Since die cost is closely related to the number of dies on a wafer, wafer diameter size has continually increased, and memory cell size has been reduced. To cope with the resulting dilemma of cell size vs. capacitance, the author invented the trench capacitor cell. The author documents its implementation, the "soft-error proble... View full abstract»

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  • The Remarkable Story of the DRAM Industry

    Publication Year: 2008, Page(s):45 - 49
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    Early in the development of computers, it was recognized that a hierarchy of memory was essential to enable timely access to data. Due to its relatively low cost and high access speed, Dynamic Random Access Memory (DRAM) technology has had a virtual monopoly on the main memory segment. Dr. Randy Isaac examines some of the key factors that determined the success of the DRAM industry since its begin... View full abstract»

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  • DRAM – A Personal View

    Publication Year: 2008, Page(s):50 - 56
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    Based on his work in the design, specification and test of DRAM for over thirty years, Dr. Richard Foss charts the crucial role of Dynamic Random Access Memory in the intertwined development of the computer and semiconductor industries, and highlights the influence of Moore's Law, whose tentacles reach into every aspect of modern life. View full abstract»

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  • Asad Abidi Recognized for Work in RF-CMOS

    Publication Year: 2008, Page(s):57 - 58
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  • R. Jacob Baker Honored at FIE Conference in October

    Publication Year: 2008, Page(s):59 - 60
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  • Van der Spiegel Acclaimed for Educational Innovation at IEEE EAB Meeting

    Publication Year: 2008, Page(s):60 - 61
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  • Lanzerotti Applauded for Editorship of LEOS Newsletter

    Publication Year: 2008, Page(s): 62
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  • SSCS Distinguished Lecturers Visit Athens and Varna

    Publication Year: 2008, Page(s):62 - 63
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  • Betty Prince Talks in Brazil

    Publication Year: 2008, Page(s): 64
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  • Congratulations New Senior Members

    Publication Year: 2008
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  • Call for Fellow Nominations

    Publication Year: 2008, Page(s): 64
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  • TOOLS: How to Write Readable Reports and Winning Proposals Part 5: Persuasive External Proposals

    Publication Year: 2008, Page(s): 65
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (125 KB)

    Part 5: Persuasive External Proposals Two keys to a winning proposal are 1] an executive summary that states the benefits of your solution and ties them to customer needs and 2] detail that backs it up crisply and without techno-babble. View full abstract»

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  • ISSCC 2008 to Focus on System Integration for Life and Style, SSCS Flagship Conference to Meet on February 3–7 in San Francisco

    Publication Year: 2008, Page(s):66 - 68
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  • Invitation from the ISSCC 2008 Technical Program Chair

    Publication Year: 2008, Page(s): 68
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Aims & Scope

This Periodical ceased production in 2008. The current retitled publication is IEEE Solid-State Circuits Magazine.

Full Aims & Scope