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Solid-State Circuits Society Newsletter, IEEE

Issue 1 • Date Winter 2007

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Displaying Results 1 - 25 of 37
  • IEEE Solid-State Circuit Society News - Cover

    Publication Year: 2007 , Page(s): 1
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  • Editor's column

    Publication Year: 2007 , Page(s): 2
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  • IEEE Solid-State Circuit Society News - Table of contents

    Publication Year: 2007 , Page(s): 3
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  • Message from the President

    Publication Year: 2007 , Page(s): 4
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  • Corrections

    Publication Year: 2007 , Page(s): 4
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (172 KB)  

    Errors in the September, 2006 issue are corrected for: "Overview of CMOS Technology Development in the MIRAI Project," by Toshiaki Masuhara and Masataka Hirose and the reprint of "Lithography and the Future of Moore's Law" (Moore, 1995). A prior version of "The Mythology of Moore's Law," by Tom R. Halfhill was published in Microprocessor Report of December, 2004. View full abstract»

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  • Analog IC Design at the University of Twente

    Publication Year: 2007 , Page(s): 5 - 10
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1222 KB)  

    Analog designers in the IC Design group of the University of Twente do not have the illusion of being able to change CMOS technology; we have to "live with it" and solve the problems by design. New circuit design techniques that we have used for solving problematic analog behavior include Thermal Noise Cancelling, Low Frequency noise reduction in MOSFET's, Distortion Cancelling using Poly-Phase Te... View full abstract»

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  • A 30 Year Retrospective on Dennard's MOSFET Scaling Paper

    Publication Year: 2007 , Page(s): 11 - 13
    Cited by:  Papers (14)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (690 KB)  

    The MOSFET scaling principles for obtaining simultaneous improvements in transistor density, switching speed, and power dissipation described by Robert H. Dennard and others in "Design of Ion-implanted MOSFETs with Very Small Physical Dimensions" (1974 ) became a roadmap for the semiconductor industry to provide systematic and predictable transistor improvements. New technology generations emergin... View full abstract»

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  • Device Scaling: The Treadmill that Fueled Three Decades of Semiconductor Industry Growth

    Publication Year: 2007 , Page(s): 14 - 18
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (457 KB)  

    The linear scaling principles for MOS technology presented by Dennard and others in 1974 created a framework for continued improvement in density and cost performance and facilitated the desegregation of the entire industry around design and manufacturing. Few concepts in our time have had as much influence on the economy. View full abstract»

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  • Recollections on MOSFET Scaling

    Publication Year: 2007 , Page(s): 19 - 22
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    In mid-1970, Bob Dennard , Fritz Gaensslen and Larry Kuhn formalized the constant-field scaling theory and its limitations. Bob Dennard went on to contribute profoundly to the demonstration of the feasibility of MOSFET scaling and led the way into implementation in real products. Scaled CMOS has become the dominant technology for digital and many analog applications and will continue to be a funda... View full abstract»

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  • The business of scaling

    Publication Year: 2007 , Page(s): 22 - 26
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1282 KB)  

    Managing the economics of scaling and increasing demand have been key factors in the growth of the semiconductor industry to nearly $250B over more than four decades. During the same period, functionality per chip doubled every two years. This paper provides a simplified view of the business aspects of scaling and technology migrations that have been, and are still, key to sustaining a phenomenal ... View full abstract»

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  • A perspective on the theory of MOSFET scaling and its impact

    Publication Year: 2007 , Page(s): 27 - 30
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (835 KB)  

    For more than two decades following the publication of the MOSFET scaling theory, CMOS engineers focused their efforts on scaling down the physical size of CMOS transistors. The opportunity for scaled CMOS to break into high-end applications came when the industry worked together to established voltage standards below 5 volt. Two of the limits of CMOS scaling were reached in the early 2000's: high... View full abstract»

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  • Impact of scaling and the scaling development environment

    Publication Year: 2007 , Page(s): 31 - 32
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (195 KB)  

    Dr. Robert Dennard's 1974 paper looked rather simple at first and did not attract much attention at Toshiba. It wasn't until CMOS acquired dominance in the mainstream of integrated circuit (IC) design that scaling theory became the physics-based guiding principle for Moore's Law to continue. Without scaling theory, the author doubts that Moore's Law could have survived for more than three decades.... View full abstract»

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  • It's all about scale

    Publication Year: 2007 , Page(s): 33 - 35
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (158 KB)  

    By scaling transistor dimensions down into the nanometer realm and scaling manufacturing capabilities up to produce billions of individual chips, the semiconductor industry has achieved economies of scale over the past 40 years that allow what was once mainframe capability to be affordable to everyone in the world in something as small as a cell phone. With many fundamental physical scaling limits... View full abstract»

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  • Design of micron MOS switching devices

    Publication Year: 2007 , Page(s): 35
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (111 KB)  

    Summary form only only given, as follows. Modern photolithographic technology offers the capability of fabricating MOSFET devices of micron dimensions and less. It is by no means obvious that such small devices can be designed with suitable electrical characteristics for LSI switching applications. In this talk we will describe short-channel devices (Leff ~ l μ) designed by scal... View full abstract»

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  • Ion implanted MOSFET's with very short channel lengths

    Publication Year: 2007 , Page(s): 36 - 37
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (569 KB)  

    Ion implantation allows the fabrication of very small MOSFET switching devices with considerably thicker gate insulators. Capacitance from the source and drain to the substrate and to the gate is reduced by more than a factor of two compared to conventional structures. Conversely, for a given thickness, smaller devices can be achieved using ion implantation. View full abstract»

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  • Design of ion-implanted MOSFET's with very small physical dimensions

    Publication Year: 2007 , Page(s): 38 - 50
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (2084 KB)  

    This paper considers the design, fabrication, and characterization of very small MOSFET switching devices suitable for digital integrated circuits using dimensions of the order of 1μ. Scaling relationships are presented which show how a conventional MOSFET can be reduced in size. An improved small device structure is presented that uses ion implantation to proVide shallow source and drain ... View full abstract»

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  • An Interview with James Meindl 2006 IEEE Medal of Honor Receipient, Microelectronics Pioneer Recognized with highest IEEE award

    Publication Year: 2007
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  • Hugo De Man Awarded for Leadership in Integrated Circuit Design and Design Methodology, Founder of IMEC recognized with highest SSCS award

    Publication Year: 2007 , Page(s): 53 - 56
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  • Pioneer in Mixed Signal Circuits will Receive IEEE Gustav Robert Kirchhoff Award at ISSCC 2007, Yannis P. Tsividis to be honored in February for contributions to circuits and MOS device modeling.

    Publication Year: 2007 , Page(s): 56 - 57
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  • IEEE Educational Innovation award to Fiez, TekBots® Named But Only Hint At Her Wide Ranging Talents

    Publication Year: 2007 , Page(s): 58 - 60
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  • 16 New Speakers Will Diversify the SSCS Distinguished Lecturer Program

    Publication Year: 2007 , Page(s): 61 - 67
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  • Congratulations new Senior Members

    Publication Year: 2007
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  • Tools: how to write readable reports and winning proposals, Part 2: Structure your reports to please your reader

    Publication Year: 2007 , Page(s): 67 - 68
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (265 KB)  

    One of the most daunting tasks of report writing is organization. Here are two ways for readers to get what they want as quickly and completely as possible. Reprinted from the IEEE Professional Communication Society Newsletter, May/June 2002 issue. View full abstract»

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  • SSCS Awards $35,000 in Chapter Subsides

    Publication Year: 2007
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  • Far East Chapters Meet in Hangzhou, China, Inaugural SSCS Regional Meeting on 15 November, 2006

    Publication Year: 2007 , Page(s): 70
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Aims & Scope

This Periodical ceased production in 2008. The current retitled publication is IEEE Solid-State Circuits Magazine.

Full Aims & Scope