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Microwave Theory and Techniques, IEEE Transactions on

Issue 2 • Date Feb. 2009

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Displaying Results 1 - 25 of 34
  • Table of contents

    Publication Year: 2009 , Page(s): C1 - C4
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    Freely Available from IEEE
  • IEEE Transactions on Microwave Theory and Techniques publication information

    Publication Year: 2009 , Page(s): C2
    Save to Project icon | Request Permissions | PDF file iconPDF (43 KB)  
    Freely Available from IEEE
  • Scalable Equivalent Circuit FET Model for MMIC Design Identified Through FW-EM Analyses

    Publication Year: 2009 , Page(s): 245 - 253
    Cited by:  Papers (8)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1412 KB) |  | HTML iconHTML  

    A scalable approach to the modeling of millimeter- wave field-effect transistors is presented in this paper. This is based on the definition of a lumped extrinsic parasitic network, easily scalable with both the number of fingers and the finger widths. The identification of the extrinsic network parameters is carried out by means of accurate full-wave electromagnetic simulations based on the layout of a single reference device. In the paper, the parasitic effects of the gate/drain manifolds and of the source layout are investigated, leading to the definition of realistic linear scaling rules. The obtained model is experimentally validated by using a family of 0.25-mum millimeter-wave GaAs pseudomorphic HEMTs through the accurate prediction of critical performance indicators, such as the linear maximum power gain or the stability factor. Despite the simplicity of the proposed model, it proves to be as accurate as typical scalable models provided by foundries. Straightforward application of the scalable modeling approach to the optimum device geometry selection in a typical design problem is also presented. View full abstract»

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  • Analytical Extraction of Extrinsic and Intrinsic FET Parameters

    Publication Year: 2009 , Page(s): 254 - 261
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (536 KB) |  | HTML iconHTML  

    The least squares solution for the entire small-signal equivalent circuit is itself a formidable task. In this paper, a systematic approach comprising the total and conventional least squares method in analytically obtaining the small-signal field-effect transistor (FET) parameters values is introduced. The proposed method eliminates the conventional ldquocold FETrdquo and ldquohot FETrdquo modeling constraints and allows an ease in inline process tracking. View full abstract»

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  • A Comprehensive Analysis of AM–AM and AM–PM Conversion in an LDMOS RF Power Amplifier

    Publication Year: 2009 , Page(s): 262 - 270
    Cited by:  Papers (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (468 KB) |  | HTML iconHTML  

    In this paper, a Volterra analysis built on top of a normal harmonic balance simulation is used for a comprehensive analysis of the causes of AM-PM distortion in a LDMOS RF power amplifier (PA). The analysis shows that any nonlinear capacitors cause AM-PM. In addition, varying terminal impedances may pull the matching impedances and cause phase shift. The AM-PM is also affected by the distortion that is mixed down from the second harmonic. As a sample circuit, an internally matched 30-W LDMOS RF PA is used and the results are compared to measured AM-AM, AM-PM and large-signal S11. View full abstract»

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  • A Broadband and Scalable Lossy Substrate Model for RF Noise Simulation and Analysis in Nanoscale MOSFETs With Various Pad Structures

    Publication Year: 2009 , Page(s): 271 - 281
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1782 KB) |  | HTML iconHTML  

    An enhanced lossy substrate model is developed with important features of broadband accuracy and scalability. The broadband accuracy is justified by a good match with open pad S -parameters measured up to 110 GHz and MOSFETs' S- and Y-parameters over 40 GHz. The proven model can accurately simulate four noise parameters ( NFmin, Rn, Re( Yopt), and Im( Yopt) ) and power spectral density of current noises ( Sid and Sig). The scalability has been validated over nanoscale MOSFETs with different finger numbers and adopting various pad structures (lossy, normal, and small pads). This scalable lossy substrate model attributed to two substrate RLC networks under the pads and transmission lines (TMLs) can consistently predict the abnormally strong finger number dependence and nonlinear frequency dependence of noise figure (NFmin) revealed in devices with lossy pads. The enhanced model is useful in guiding pad and TML layouts for effective reduction of extrinsic noises and low noise design. Using a normal pad structure, the NFmin can be effectively suppressed to approach the intrinsic performance, which is nearly independent of finger numbers. View full abstract»

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  • A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors

    Publication Year: 2009 , Page(s): 282 - 292
    Cited by:  Papers (8)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1720 KB) |  | HTML iconHTML  

    A new nonlinear charge-conservative scalable dynamic electro-thermal compact model for laterally defused MOS (LDMOS) RF power transistors is described in this paper. The transistor is characterized using pulsed I-V and S-parameter measurements, to ensure isothermal conditions. A new extrinsic network and extrinsic parameter-extraction methodology is developed for high-power RF LDMOS transistor modeling, using manifold deembedding by electromagnetic simulation, and optimization of the extrinsic network parameter values over a broad frequency range. The intrinsic model comprises controlled charge and current sources that have been implemented using artificial neural networks, designed to permit accurate extrapolation of the transistor's performance outside of the measured data domain. A thermal sub-circuit is coupled to the nonlinear model. Large-signal validation of this new model shows a very good agreement with measurements at 2.14 GHz. View full abstract»

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  • A Circularly Polarized Balanced Radar Front-End With a Single Antenna for 24-GHz Radar Applications

    Publication Year: 2009 , Page(s): 293 - 297
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (2047 KB) |  | HTML iconHTML  

    In this paper, we propose a circularly polarized balanced radar front-end topology with a Tx leakage canceller. This radar is composed of a dual-orthogonal fed microstrip patch antenna, a 90deg delay line, a differential cross-coupled oscillator, two Lange couplers, a Wilkinson combiner, and a mixer. We implemented circularly polarized balanced Doppler radars by using a printed circuit board and InGaP/GaAs heterojunction bipolar transistor technologies. The front-end chip and module with antenna are 1 mm times 1 mm and 3 cm times 3 cm, respectively. The average Tx-to-Rx isolation is about 36 dB. This radar can measure speeds as low as 0.5 mm/s, which corresponds to a 0.076-Hz Doppler shift. The received signals of the circularly polarized balanced Doppler radar are about two times larger than those of a linearly polarized balanced Doppler radar due to the topology. This result occurs because the proposed radar has an intrinsic loss of only 3 dB in the receiving path. View full abstract»

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  • Design and Analysis for a 60-GHz Low-Noise Amplifier With RF ESD Protection

    Publication Year: 2009 , Page(s): 298 - 305
    Cited by:  Papers (22)  |  Patents (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1284 KB) |  | HTML iconHTML  

    An RF electrostatic discharge (ESD) protection for millimeter-wave (MMW) regime applied to a 60-GHz low-noise amplifier (LNA) in mixed-signal and RF purpose 0.13-mum CMOS technology is demonstrated in this paper. The measured results show that this chip achieves a small signal gain of 20.4 dB and a noise figure (NF) of 8.7 dB at 60 GHz with 65-mW dc power consumption. Without ESD protection, the LNA exhibits a gain of 20.2 dB and an NF of 7.2 dB at 60 GHz. This ESD protection using an impedance isolation method to minimize the RF performance degradation sustains 6.5-kV voltage level of the human body model on the diode and 1.5 kV on the core circuit, which is much higher than that without ESD protection (< 350 V). To our knowledge, this is the first CMOS LNA with RF ESD protection in the MMW regime and has the highest operation frequency reported to date. View full abstract»

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  • A 50–300-MHz Highly Linear and Low-Noise CMOS Gm{\hbox {-}}C Filter Adopting Multiple Gated Transistors for Digital TV Tuner ICs

    Publication Year: 2009 , Page(s): 306 - 313
    Cited by:  Papers (10)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (762 KB) |  | HTML iconHTML  

    In this paper, a highly linear and low noise CMOS active tracking low-pass filter is presented to overcome a local oscillator harmonic mixing problem for Advanced Television Systems Committee terrestrial and cable digital TV tuner integrated circuits. A transconductor linearization technique based on a method of multiple gated transistors is adopted to improve the linearity performance. The cutoff frequency of the proposed filter is tunable from 50 to 300 MHz. Fabricated in a 0.18-mum CMOS process, the filter provides a minimum input referred noise density of 5 nV/radic(Hz) and maximum in-band output referred third-order intercept point of 16.9 dBm, while drawing an average current of 40 mA from 1.8 V. The total chip area is 1 mm times 0.9 mm. View full abstract»

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  • Optimizing Losses in Distributed Multiharmonic Matching Networks Applied to the Design of an RF GaN Power Amplifier With Higher Than 80% Power-Added Efficiency

    Publication Year: 2009 , Page(s): 314 - 322
    Cited by:  Papers (17)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (902 KB) |  | HTML iconHTML  

    This paper analyzes the power losses in distributed multiharmonic matching networks and proposes a methodology to minimize these losses, which are critical in designing harmonic controlled or switching mode power amplifiers (PAs). The effect of the harmonic output matching topology on PA performance is studied. An analytical evaluation is developed to show the effect of the harmonic network topology on the conduction losses in the fundamental matching network. This analysis is validated through the comparison of two different matching network topologies in the design of an inverse class F PA with a carrier frequency of around 1 GHz. A 0.2-dB improvement in the losses is achieved, allowing for an improvement of the output power and gain and for an increase in the power-added efficiency by 4%, reaching 81%. View full abstract»

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  • Digital Baseband Predistortion Based Linearized Broadband Inverse Class-E Power Amplifier

    Publication Year: 2009 , Page(s): 323 - 328
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (731 KB) |  | HTML iconHTML  

    A newly introduced inverse class-E power amplifier (PA) was designed, simulated, fabricated, and characterized. The PA operated at 2.26 GHz and delivered 20.4-dBm output power with peak drain efficiency (DE) of 65% and power gain of 12 dB. Broadband performance was achieved across a 300-MHz bandwidth with DE of better than 50% and 1-dB output-power flatness. The concept of enhanced injection predistortion with a capability to selectively suppress unwanted sub-frequency components and hence suitable for memory effects minimization is described coupled with a new technique that facilitates an accurate measurement of the phase of the third-order intermodulation (IM3) products. A robust iterative computational algorithm proposed in this paper dispenses with the need for manual tuning of amplitude and phase of the IM3 injected signals as commonly employed in the previous publications. The constructed inverse class-E PA was subjected to a nonconstant envelope 16 quadrature amplitude modulation signal and was linearized using combined lookup table (LUT) and enhanced injection technique from which superior properties from each technique can be simultaneously adopted. The proposed method resulted in 0.7% measured error vector magnitude (in rms) and 34-dB adjacent channel leakage power ratio improvement, which was 10 dB better than that achieved using the LUT predistortion alone. View full abstract»

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  • 0.5-V 5.6-GHz CMOS Receiver Subsystem

    Publication Year: 2009 , Page(s): 329 - 335
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (840 KB) |  | HTML iconHTML  

    The building blocks of a 0.5-V receiver, including a receiver front-end and a low-pass filter (LPF), are fabricated using 0.18-mum CMOS technology. At 5.6 GHz, the receiver front-end achieves a voltage gain of 17.1 dB and a noise figure of 8.7 dB, while dissipating at 19.4 mW. The fifth-order low-pass Chebyshev filter achieves a corner frequency of 2.6 MHz and an input-referred noise of 28.5 nV/sqrt (Hz) at 6.8 mW. The receiver front-end is further integrated with the LPFs to form a highly integrated receiver subsystem at ultra-low voltage. View full abstract»

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  • The Effects of Limited Drain Current and On Resistance on the Performance of an LDMOS Inverse Class-E Power Amplifier

    Publication Year: 2009 , Page(s): 336 - 343
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (567 KB) |  | HTML iconHTML  

    In this paper, the effects of limited drain current and transistor's on resistance on the performance of an LDMOS inverse class-E power amplifier (PA) are analyzed using a simplified transistor model of piecewise linear dc I-V curves. The minimal magnitude of driving signal, the maximal voltage gain, and the maximal output power of an inverse class-E PA can be defined with the maximal drain kept. The theoretical and simulated results of amplifier performance, such as drain efficiency and output voltage, are compared to verify the analysis, and the nonlinear relation among the drain dc supply voltage, input/output voltage, and phase of an inverse class-E PA caused by limited drain current are presented. The effects on the amplifier performance are further verified by the measured results of a 945-MHz transmission-line inverse class-E amplifier in comparison with the corresponding theoretical and simulated results. View full abstract»

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  • Low Phase Noise Self-Switched Biasing CMOS LC Quadrature VCO

    Publication Year: 2009 , Page(s): 344 - 351
    Cited by:  Papers (8)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1003 KB) |  | HTML iconHTML  

    A self-switched biasing quadrature voltage-controlled oscillator (VCO) is presented. It is implemented by directly injecting the oscillation signal of one VCO core into the other VCO core through the divided tail current sources without additional active devices for coupling. The proposed coupling structure automatically switches the NMOS field-effect transistors used in VCO cores and current sources from strong inversion to accumulation. Since the deep switching of MOSFETs was reported to physically reduce flicker noise, the proposed quadrature VCO (QVCO) is expected to improve the phase noise performance, which is confirmed experimentally. The designed QVCO using 0.18- mum CMOS technology operates from 1.86 to 2.2 GHz with a 17% frequency tuning range. The measured phase noise is from - 129.1 to - 134.5 dBc/Hz at a 1-MHz offset, which is really close to ideal simulation results with the NMOS model disabling the flicker noise components. The average measured phase noise is 7.2 dB below the simulated one with a flicker noise model, which verifies the physical reduction of flicker noise by deep switching of the MOSFET. The phase noise figure-of-merit ranges from 179 to 185 over the entire tuning range. The QVCO dissipates 20 mA from a 1.8-V supply. View full abstract»

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  • Highly Efficient Grouping Strategy for the Analysis of Two-Port Arbitrarily Shaped H -Plane Waveguide Devices

    Publication Year: 2009 , Page(s): 352 - 360
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (623 KB) |  | HTML iconHTML  

    A new grouping strategy for the analysis of two-port arbitrarily shaped H-plane devices in rectangular waveguides is presented. The new grouping strategy accelerates a previous method based on the method of moments and the Green's function of an infinite line source placed inside two parallel plates. The computational cost of analyzing several H-plane filters of different geometries is reduced by about 50%, while maximum accuracy is maintained, as a result of using the new grouping strategy. View full abstract»

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  • Broadband Modeling of High-Frequency Microwave Devices

    Publication Year: 2009 , Page(s): 361 - 373
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (741 KB) |  | HTML iconHTML  

    Circuit modeling of high-frequency devices described by tabulated multiport parameters has generated immense interest during recent years. In most cases, equivalent circuit models (ECMs) are available to the designers, which correlate well with the measured parameters at lower frequencies, however, deviate at higher frequencies. Traditional efforts to improve ECMs are device specific, laborious, and ad-hoc in nature. In order to address these difficulties, this paper presents an efficient and automated algorithm to identify appropriate frequency-dependent elements for adding to the ECM at arbitrary locations so as to correct for high-frequency errors. The new method enables the designers to retain their existing physical models while providing a means to capture the high-frequency effects accurately. View full abstract»

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  • Surface Interaction Matrices for Boundary Integral Analysis of Lossy Transmission Lines

    Publication Year: 2009 , Page(s): 374 - 382
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (834 KB) |  | HTML iconHTML  

    A method intended to characterize enclosed computational electromagnetic domains in terms of interaction and response of a defined set of surface excitations is described. The finite-element method is used to compute a matrix relating surface current and tangential field in terms of an appropriate basis set such that a coupled solution with a boundary integral formulation is rendered seamless. The proposed method allows for a decoupled finite-element boundary-integral system through use of a discrete-frequency surface interaction matrix, computed in an alternative way, that is still independent of the properties of the background in which the enclosed region resides. The method is applied to per-unit-length resistance and inductance extraction of a variety of multiconductor lossy transmission lines. The primary advantage the proposed method presents for this particular application is reuse of matrices given recurrence of specific conductor cross sections. View full abstract»

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  • Accelerated Microwave Design Optimization With Tuning Space Mapping

    Publication Year: 2009 , Page(s): 383 - 394
    Cited by:  Papers (36)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (986 KB) |  | HTML iconHTML  

    We introduce a tuning space-mapping technology for microwave design optimization. The general tuning space-mapping algorithm is formulated, which is based on a so-called tuning model, as well as on a calibration process that translates the adjustment of the tuning model parameters into relevant updates of the design variables. The tuning model is developed in a fast circuit-theory based simulator and typically includes the fine model data at the current design in the form of the properly formatted scattering parameter values. It also contains a set of tuning parameters, which are used to optimize the model so that it satisfies the design specification. The calibration process may involve analytical formulas that establish the dependence of the design variables on the tuning parameters. If the formulas are not known, the calibration process can be performed using an auxiliary space-mapping surrogate model. Although the tuning space mapping can be considered to be a specialized case of the standard space-mapping approach, it can offer even better performance because it enables engineers to exploit their experience within the context of efficient space mapping. Our approach is demonstrated using several microwave design optimization problems. View full abstract»

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  • An Efficient Perturbative Approach for Finite-Element Analysis of Microwave Devices Exhibiting Small Geometrical Variations

    Publication Year: 2009 , Page(s): 395 - 405
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (853 KB) |  | HTML iconHTML  

    An innovative method for fast analysis of geometrical variations in electromagnetic wave problems is proposed. The method is based on a perturbative approach applied to the solution of the linear integro-differential operator of the electromagnetic problem in presence of small domain modifications. This approach has been embedded in a classical finite-element framework to achieve a very fast technique for field evaluation in synthesis or tolerance investigation of microwave passive devices. The proposed technique can handle geometrical variations without the need of re-meshing the domain and without any deformation of the original mesh of the problem. View full abstract»

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  • Waveguide Microwave Imaging: Neural Network Reconstruction of Functional 2-D Permittivity Profiles

    Publication Year: 2009 , Page(s): 406 - 414
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1294 KB) |  | HTML iconHTML  

    A new microwave imaging technique is proposed for reconstruction of 2-D complex permittivity profiles in dielectric samples located in a waveguide system. The spatial distributions of the dielectric constant and the loss factor are approximated by continuous functions whose functional parameters are determined using a neural network technique backed by full-wave finite-difference time-domain analysis. The profiles are reconstructed from measurements of reflection and transmission characteristics obtained with the tested sample at different locations. Operational capabilities of the technique are illustrated through a series of computational experiments for rectangular and cylindrical samples at two (original and 90deg -rotated) positions. The results demonstrate excellent agreement between the reconstructed and actual profiles approximated by linear, quadratic, and Gaussian functions: the average relative errors do not exceed 0.4%, 2.2%, and 4.8%, respectively. Finally, the assumption of functional approximation, uniqueness of the reconstruction, and prospects of practical use of the technique are thoroughly discussed. View full abstract»

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  • Efficient Algorithm for Passivity Enforcement of S -Parameter-Based Macromodels

    Publication Year: 2009 , Page(s): 415 - 420
    Cited by:  Papers (23)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (2077 KB) |  | HTML iconHTML  

    This paper presents an efficient and robust algorithm for passivity enforcement of S -parameter-based macromodels. The method computes updated values of the model residues by least squares fitting of nonpassive residuals of the scattering matrix. Several examples show that the proposed method yields accurate passive macromodels at a limited computational cost. View full abstract»

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  • A Multiple-Line Double Multirate Shooting Technique for the Simulation of Heterogeneous RF Circuits

    Publication Year: 2009 , Page(s): 421 - 429
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (675 KB) |  | HTML iconHTML  

    This paper describes a computer-aided design tool especially conceived for the efficient time-domain simulation of strongly nonlinear mixed digital, baseband, and RF circuits operating in multiple time scales. The proposed numerical method is based on a 3-D envelope oriented technique over an innovative multiple-line double multirate shooting strategy, and is tested with an illustrative circuit example. Significant gains in computation speed over previous methods recently proposed for the simulation of this category of circuits are reported, as the technique was tailored to take advantage of the circuits' heterogeneity and stimulus time-rate disparity. View full abstract»

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  • Application of Representation Theory to Dual-Mode Microwave Bandpass Filters

    Publication Year: 2009 , Page(s): 430 - 441
    Cited by:  Papers (11)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (831 KB) |  | HTML iconHTML  

    This paper discusses the physics behind the operation of dual-mode bandpass filters from a field theoretical point of view. It is argued that the two degenerate modes of the empty dual-mode cavity, commonly taken as the vertical and horizontal polarizations, become nonphysical when coupling and tuning elements are inserted. Instead, the original degenerate modes are rotated, or modified in a complex way, to generate two new modes whose characteristics depend on the coupling and tuning elements. It is shown that the tuning elements, as placed in existing dual-mode filter designs, act as both tuning and coupling elements. A working dual-mode filter can be designed with only ldquotuningrdquo elements present. A physical representation of dual-mode filters in terms of the eigenresonances of the dual-mode cavities, with the tuning and coupling elements present, is introduced. Two fourth-order dual-mode rectangular cavity filters with the same response in the passband and its vicinity are also presented to demonstrate the similar role played by ldquotuningrdquo and coupling elements in dual-mode cavities. The first filter uses only ldquotuningrdquo elements, while the second is based only on ldquocouplingrdquo elements. View full abstract»

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  • Wire-Bond Free Technique for Right-Angle Coplanar Waveguide Bend Structures

    Publication Year: 2009 , Page(s): 442 - 448
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1796 KB) |  | HTML iconHTML  

    This paper presents a new wire-bond free technique for suppressing slot-line mode excitation in coplanar waveguides (CPWs) bends. The suppression of slot-line mode is obtained by applying a slow wave structure to the shorter slot of the right-angle bend. The structure is modified into a circular-shaped bend where the slow wave compensation is then used to equalize the electrical length of the inner and outer slots. The insertion loss of the modified CPW bend with slow wave structure is evaluated on a silicon substrate and is similar to straight CPW lines with return loss ( S 11) values below -20 dB over a 50-GHz bandwidth. View full abstract»

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Aims & Scope

The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design..

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Dominique Schreurs
Dominique.Schreurs@ieee.org

Editor-in-Chief
Jenshan Lin
jenshan@ieee.org